A modified criterion for shear band formation in bulk metallic glass under complex stress states

A new criterion for shear band formation in metallic glasses is proposed based on the shear plane criterion proposed by Packard and Schuh [1]. This modified shear plane (MSP) criterion suggests that a shear band is not initiated randomly throughout the entire material under stress but is initiated at the physical boundaries or defects and at locations where the highest normal stress modified maximum shear stress occurs. Moreover, the same as in the shear plan criterion, the shear stress all over the shear band should exceed the shear yield strength of the material. For a complete shear band to form, both requirements need to be fulfilled. The shear yield strength of the material is represented by the shear stress of the point at which the shear band stops. The new criterion agrees very well with experimental results in both the determination of the shear yield strength and the shear band path. (C) 2010 Elsevier B.V. All rights reserved.

基于孔径耦合带状线的激光脉冲整形系统

实现了一种新型的激光脉冲整形系统，该系统使用了一个由孔径耦合带状线（ACSL）电脉冲整形器驱动的电光调制器。一个电脉冲整形器由两条通过其公共接地板上的耦合孔径发生耦合作用的带状传输线所组成的四端口装置。更换具有不同耦合孔径的公共接地板，该电脉冲整形发生器可以具有150ps时间结构的任意整形电脉冲。将任意整形的电脉冲输入到电光调制器上，就可以得到任意整形的激光脉冲。利用该系统，激光脉冲整形系统能够产生具有150ps前后沿，1～3ns脉冲宽度可调、高对比度、光滑过渡以及任意整形的激光脉冲。

Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field

Suppression of the exciton recombination in GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum well (CQW) induced by an external magnetic field is investigated theoretically. Unlike the usual electro-Stark effect, the exciton energy dispersion of an exciton is modified by an external in-plane magnetic field, the ground state of the magnetoexciton shifts from a zero in-plane center of mass (CM) momentum to a finite CM momentum, and the Lorentz force induces the spatial separation of electron and hole. Consequently, this effect renders the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. This effect depends sensitively on the thickness and height of GaAs0.7Sb0.3 layer, therefore it could provide us useful infometion about the band alignment of CQW. (C) 2004 American Institute of Physics.

Applicability Range of Stoneys Formula and Modified Formulas for a Film/Substrate Bilayer

In addition to the layer thickness and effective Young’s modulus, the impact of the kinematic assumptions, interfacial condition, in-plane force, boundary conditions, and structure dimensions on the curvature of a film/substrate bilayer is examined. Different models for the analysis of the bilayer curvature are compared. It is demonstrated in our model that the assumption of a uniform curvature is valid only if there is no in-plane force. The effects of boundary conditions and structure dimensions, which are not-fully-included in previous models are shown to be significant. Three different approaches for deriving the curvature of a film/substrate bilayer are presented, compared, and analyzed. A more comprehensive study of the conditions regarding the applicability of Stoney’s formula and modified formulas is presented.

Numerical analyses for the material bifurcation in plane sheet under tension

The various patterns (shear banding, surface wrinkling and necking) of material bifurcation in plane sheet under tension are investigated in this paper by means of a numerical method. It is found that numerical analysis can provide better ground for searching for the lowest critical loads. The inhomogeneity caused by void damage and the nonuniformity in the stress distribution across sheet thickness are proved to have detrimental effects on the material bifurcation. Nevertheless, material stability can be promoted by any means of depressing void damage or alleviating stress, even locally across the thickness. Besides, the peculiar behaviour of material bifurcation under slight biaxiality state is demonstrated. Copyright (C) 1996 Elsevier Science Ltd

gamma-LiAlO2 single crystal grown by Czochralski technique and modified by vapor transport equilibration (VTE) technique

Large-sized (similar to 2 inch, 50.8 mm) gamma-UA102 single crystal has been grown by conventional Czochralski (Cz) method, but the crystal ha's a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in gamma-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum (FWHM) values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium (VTE) technique was introduced to modify the crystal quality. After 1000 degrees C/48 h, 1100 degrees C/48 h, 1200 degrees C/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190 similar to 1900 nm at room temperature. When the VTE temperature was raised to 1300 degrees C, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality gamma-LiAlO2 crystal can be obtained.

Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy

The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly as the well width is decreased. For an Al0.02Ga0.98As/AlAs multiple QW with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. An increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. The detailed analysis shows that the observed anisotropy arises from the interface asymmetry of QWs, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. More, when the 1 ML InAs is inserted at one interface of GaAs/AlGaAs QW, the optical anisotropy of the QW can be increased by a factor of 8 due to the enhanced asymmetry of the QW. These results demonstrate clearly that the RDS is a sensitive and powerful tool for the characterization of semiconductor interfaces.

The wave function evolution of an exciton in a bilayer system: Turning on a static in-plane electric field

The time evolution of the ground state wave function of an exciton in an ideal bilayer system is investigated within the framework of the effective-mass approximation. All of the moduli squared of the ground state wave functions evolve with time as cosine functions after an in-plane electric field is applied to the bilayer system. The variation amplitude and period of the modulus squared of the ground state wave function increase with the in-plane electric field F-r for a fixed in-plane relative coordinate r and fixed separation d between the electron and hole layers. Moreover, the variation amplitude and period of the modulus squared of the ground state wave function increase with the separation d for a fixed r and fixed in-plane electric field. Additionally, the modulus squared of the ground state wave function decreases as r increases at a given time t for fixed values of d and F-r. (c) 2007 American Institute of Physics.

Electronic structure of diluted magnetic semiconductor superlattices: In-plane magnetic field effect

The electronic structure of diluted magnetic semiconductor (DMS) superlattices under an in-plane magnetic field is studied within the framework of the effective-mass theory; the strain effect is also included in the calculation. The numerical results show that an increase of the in-plane magnetic field renders the DMS superlattice from the direct band-gap system to the indirect band-gap system, and spatially separates the electron and the hole by changing the type-I band alignment to a type-II band alignment. The optical transition probability changes from type I to type II and back to type I like at large magnetic field. This phenomenon arises from the interplay among the superlattice potential profile, the external magnetic field, and the sp-d exchange interaction between the carriers and the magnetic ions. The shear strain induces a strong coupling of the light- and heavy-hole states and a transition of the hole ground states from "light"-hole to "heavy"-hole-like states.

Ground state energy of He isoelectronic sequence treated variationally via Hylleraas-like wavefunction

In this study, the energy for the ground state of helium and a few helium-like ions (Z=1-6) is computed variationally by using a Hylleraas-like wavefunction. A four-parameters wavefunction, satisfying boundary conditions for coalescence points, is combined with a Hylleraas-like basis set which explicitly incorporates r12 interelectronic distance. The main contribution of this work is the introduction of modified correlation terms leading to the definition of integral transforms which provide the calculation of expectation value of energy to be done analytically over single-particle coordinates instead of Hylleraas coordinates.

Study on the lifetime of M-intermediate of bacteriorhodopsin film chemically modified with CeO2 nanoparticles

The characteristics of intermediates of bacteriorhodopsin (bR) can be verified by chemical modification of its surroundings. CeO2 nanoparticles, which were obtained using water-in-oil (W/O) microemulsion and calcined at various temperatures, were used as chemical additive for the modification of bR. X-ray diffraction (XRD) shows that the mean particle sizes for the samples calcined at 500 and 800 degrees C are approximately 10 and 30 nm, respectively. We prepared CeO2 nanoparticle modified poly(vinyl alcohol) (bR-PVA) films with an optical density of about 1.5 at the ground state. It is observed that the lifetime of the Wintermediate for the modified films is prolonged compared with that of the unmodified ones, and the lifetime increases with decreasing particle size. A probable mechanism, which is likely to involve effective molecular interactions between the CeO2 nanoparticles and the bR molecules, is discussed. The hydroxyl groups, which might arise from the interaction between the nanoparticles and the surrounding water molecules, help to lower the ability of the Schiff base of uptaking protons in the Wintermediate. The results indicate that controlling the interactions between biomolecules and various nanomaterials would enlarge the functionality and the range of the application of nanoparticles.

Experimental Study on Vortex-Induced Vibrations of a Pipeline Near a Plane Boundary in Steady Flow

对单向水流作用下近壁管道横向涡激振动进行了实验模拟,重点探讨了管道与壁面间隙比(e/D)对管道涡激振动幅值和涡激振动频率响应特性的影响规律.实验结果表明,管道与壁面间隙宽度对管道涡激振动特性有较明显影响.在较大间隙比(e/D＞0.66)下,管道振幅随着Vr数的增大先快速增长到最大值,然后平缓下降;在振动初期(即Vr数较小时),管道振动频率变化基本符合Strouhal规律;在振动中后期(即Vr数较大时),管道振动频率变化不符合Strouhal规律,而在管道固有频率附近缓慢增长.在较小间隙比(e/D＜0.30)下,管道振幅随Vr数的增大先平缓上升到最大值,随后较快速下降;在振动初期,管道振动频率变化不遵循Strouhal规律;在整个振动范围内,与较大间隙比情况相比,随着Vr数增加,管道振动频率增长幅度明显较大.

Micro-shock waves generated inside a fluid jet impinging on plane wall

An Nd:glass laser pulse (18 ns, 1.38 J) is focused in a tiny area of about 100-mum diam under ambient conditions to produce micro-shock waves. The laser is focused above a planar surface with a typical standoff distance of about 4 mm, The laser energy is focused inside a supersonic circular jet of carbon dioxide gas produced by a nozzle with internal diameter of 2.9 mm and external diameter of 8 mm, Nominal value of the Mach number of the jet is around 2 with the corresponding pressure ratio of 7.5 (stagnation pressure/static pressure at the exit of the nozzle), The interaction process of the micro-shock wave generated inside the supersonic jet with the plane wall is investigated using double-pulse holographic interferometry. A strong surface vortex field with subsequent generation of a side jet propagating outward along the plane wail is observed. The interaction of the micro-shock wave with the cellular structure of the supersonic jet does not seem to influence the near surface features of the flowfield. The development of the coherent structures near the nozzle exit due to the upstream propagation of pressure waves seems to be affected by the outward propagating micro-shock wave. Mach reflection is observed when the micro-shock wave interacts with the plane wall at a standoff distance of 4 mm, The Mach stem is slightly deflected, indicating strong boundary-layer and viscous effects near the wall. The interaction process is also simulated numerically using an axisymmetric transient laminar Navier-Stokes solver. Qualitative agreement between experimental and numerical results is good.

The modified Peierls-Nabarro model of interfacial misfit dislocation

The Peierls-Nabarro model of the interfacial misfit dislocation array is analytically extended to a family of dislocations of greater widths. By adjusting a parameter, the width of the misfit dislocations, the distribution of the shear stress, and the restoring force law can be systematically varied. The smaller the amplitude of the restoring force, the wider the misfit dislocations and the lower the interfacial energy.

Elasticity, stability, and ideal strength of beta-SiC in plane-wave-based ab initio calculations

On the basis of the pseudopotential plane-wave method and the local-density-functional theory, this paper studies energetics, stress-strain relation, stability, and ideal strength of beta-SiC under various loading modes, where uniform uniaxial extension and tension and biaxial proportional extension are considered along directions [001] and [111]. The lattice constant, elastic constants, and moduli of equilibrium state are calculated and the results agree well with the experimental data. As the four SI-C bonds along directions [111], [(1) over bar 11], [11(1) over bar] and [111] are not the same under the loading along [111], internal relaxation and the corresponding internal displacements must be considered. We find that, at the beginning of loading, the effect of internal displacement through the shuffle and glide plane diminishes the difference among the four Si-C bonds lengths, but will increase the difference at the subsequent loading, which will result in a crack nucleated on the {111} shuffle plane and a subsequently cleavage fracture. Thus the corresponding theoretical strength is 50.8 GPa, which agrees well with the recent experiment value, 53.4 GPa. However, with the loading along [001], internal relaxation is not important for tetragonal symmetry. Elastic constants during the uniaxial tension along [001] are calculated. Based on the stability analysis with stiffness coefficients, we find that the spinodal and Born instabilities are triggered almost at the same strain, which agrees with the previous molecular-dynamics simulation. During biaxial proportional extension, stress and strength vary proportionally with the biaxial loading ratio at the same longitudinal strain.