16 resultados para metal-air

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The formations of the surface plasmonpolariton (SPP) bands in metal/air/metal (MAM) sub-wavelength plasmonic grating waveguide (PGW) are proposed. The band gaps originating from the highly localized resonances inside the grooves can be simply estimated from the round trip phase condition. Due to the overlap of the localized SPPs between the neighboring grooves, a Bloch mode forms in the bandgap and can be engineered to build a very flat dispersion for slow light. A chirped PGW with groove depth varying is also demonstrated to trap light, which is validated by finite-difference time-domain (FDTD) simulations with both continuous and pulse excitations.

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A novel catalyst system based on nickel(II) tetraphenylporphyrin (Ni(II)TPP) and methylaluminoxane for styrene polymerization was developed. This catalyst system has a high thermal stability and show fairly good activity. The obtained polystyrene (PS) was isotactic-rich atactic polymer by C-13 NMR analysis, and its molecular weight distribution was rather narrow (M-w/M-n approximate to 1.6, by GPC analysis). ESR revealed that Ni(II)TPP pi cation radicals were formed in the polymerization and could remain in the resulting PS stably. The mechanism of the polymerization was discussed and a special coordination mechanism was proposed. The PS product containing Ni(II)TPP pi cation radicals can be used as a potential functional material.

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When materials processing is conducted in air surroundings by use of an impinging plasma jet, the ambient air will be entrained into the materials processing region, resulting in unfavorable oxidation of the feedstock metal particles injected into the plasma jet and of metallic substrate material. Using a cylindrical solid shield may avoid the air entrainment if the shield length is suitably selected and this approach has the merit that expensive vacuum chamber and its pumping system are not needed. Modeling study is thus conducted to reveal how the length of the cylindrical solid shield affects the ambient air entrainment when materials processing (spraying, remelting, hardening, etc.) is conducted by use of a turbulent or laminar argon plasma jet impinging normally upon a flat substrate in atmospheric air. It is shown that the mass flow rate of the ambient air entrained into the impinging plasma jet cannot be appreciably reduced unless the cylindrical shield is long enough. In order to completely avoid the air entrainment, the gap between the downstream-end section of the cylindrical solid shield and the substrate surface must be carefully selected, and the suitable size of the gap for the turbulent plasma jet is appreciably larger than that for the laminar one. The overheating of the solid shield or the substrate could become a problem for the turbulent case, and thus additional cooling measure may be needed when the entrainment of ambient air into the turbulent impinging plasma jet is to be completely avoided.

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Goal, Scope and Background. Heavy metal is among one of the pollutants, which cause severe threats to humans and the environment in China. The aim of the present review is to make information on the source of heavy metal pollution, distribution of heavy metals in the environment, and measures of pollution control accessible internationally, which are mostly published in Chinese. Methods. Information from scientific journals, university journals and governmental releases are compiled focusing mainly on Cd, Cu, Pb and Zn. Partly Al, As, Cr, Fe, Hg, Mn and Ni are included also in part as well. Results and Discussion. In soil, the average contents of Cd, Cu, Pb and Zn are 0.097, 22.6, 26.0 and 74.2 mg/kg, respectively. In the water of. the Yangtze River Basin, the concentrations of Cd, Cu, Pb and Zn are 0.080, 7.91, 15.7 and 18.7 pg/L, respectively. In reference to human activities, the heavy metal pollution comes from three sources: industrial emission, wastewater and solid waste. The environment such as soil, water and air were polluted by heavy metals in some cases. The contents of Cd, Cu, Pb and Zn even reach 3.16, 99.3, 84.1 and 147 mg/kg, respectively, in the soils of a wastewater irrigation zone. These contaminants pollute drinking water and food, and threaten human health. Some diseases resulting from pollution of geological and environmental origin, were observed with long-term and non-reversible effects. Conclusions. In China, the geological background level of heavy metal is low, but with the activity of humans, soil, water, air, and plants are polluted by heavy metals in some cases and even affect human health through the food chain. Recommendations and Outlook. To remediate and improve environmental quality is a long strategy for the polluted area to keep humans and animals healthy. Phytoremediation would be an effective technique to remediate the heavy metal pollutions.

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Microsquare resonators laterally confined by SiO2/Au/air multilayer structure are investigated by light ray method with reflection phase-shift of the multiple layers and two-dimensional (2-D) finite-difference time-domain (FDTD) technique. The reflectivity and phase shift of the mode light ray on the sides of the square resonator with the semiconductor/SiO2/Au/air multilayer structure are calculated for TE and TM modes by transfer matrix method. Based on the reflection phase shift and the reflectivity, the mode wavelength and factor are calculated by the resonant condition and the mirror loss, which are in agreement well with that obtained by the FDTD simulation. We find that the mode factor increases greatly with the increase of the SiO2 layer thickness, especially as d < 0.3 mu m. For the square resonator with side length 2 mu m and refractive index 3.2, anticrossing mode couplings are found for confined TE modes at wavelength about 1.6 mu m at d = 0.11 mu m, and confined TM modes at d = 0.71 mu m, respectively.

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A new method to fabricate nanoscale metallic air-bridges has been investigated. The pillar patterns of the air-bridge were defined on a SiO2, sacrificial layer by electron-beam lithography combined with inductively coupled plasma etching. Thereafter, the span (suspended part between the pillars) patterns were defined with a second electron-beam exposure on a PMMA/PMMA-MAA resist system. The fabrication process was completed by subsequent metal electron-beam evaporation, lift-off in acetone, and removal of the sacrificial layer in a buffered hydrofluoric (HF) solution. Air-bridges with two different geometries (line-shaped and cross-shaped) were studied in detail. The narrowest width of the air-bridges was around 200 nm, and the typical length of the air-bridges was 2-5 mu m. The advantages of our method are the simplicity of carrying out electron-beam exposure with good reproducibility and the capability of more accurate control of the pillar sizes and shapes of the air-bridge. (C) 2007 Elsevier Ltd. All rights reserved.

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A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

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Air-stable n-type field effect transistors were fabricated with an axially oxygen substituted metal phthalocyanine, tin (IV) phthalocyanine oxide (SnOPc), as active layers. The SnOPc thin films showed highly crystallinity on modified dielectric layer, and the electron field-effect mobility reached 0.44 cm(2) V-1 s(-1). After storage in air for 32 days, the mobility and on/off ratio did not obviously change. The above results also indicated that it is an effective approach of seeking n-type semiconductor by incorporating the appropriate metal connected with electron-withdrawing group into pi-pi conjugated system.

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In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N-'-diphentyl-N,N-'-bis(1-naphthylphenyl)-1,1(')-biphenyl-4,4(')-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120 degrees C for 5 min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of similar to 270.

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In general, the reduction of Eu3+ to Eu2+ in solids needs an annealing Process in a reducing atmosphere. in this paper, it is of great interest and importance to find that the reduction of Eu3+ to Eu2+ can be realized in a series of alkaline-earth metal aluminum silicates MAl2Si2O8 (M = Ca, Sr, Ba) just in air condition. The Eu2+-doped MAl2Si2O8 (M = Ca, Sr, Ba) powder samples were prepared in air atmosphere by Pechini-type sol-gel process. It was found that the strong hand emissions of 4f(6)5d(1)-4f(7) from Eu2+ were observed at 417, 404 and 373 nm in air-annealed CaAl2Si2O8, SrAl2Si2O8 and BaAl2Si2O8, respectively, under ultraviolet excitation although the Eu3+ precursors were employed. In addition, under low-voltage electron beam excitation, Eu2+-doped MAl2Si2O8 also shows strong blue or ultraviolet emission corresponding to 4f(6)5d(1)-4f(7) transition.

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In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

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Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

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Hydrotalcite-like compounds containing carbonate ion as the interlayer anion were prepared by coprecipitation under low supersaturation condition by mixing an aqueous solution of metal nitrates with an aqueous solutions of NaOH and Na2CO3, at room temperature, maintaining pH = 8-10 with vigorous stirring, Following the mixing, the resulting heavy slurry was aged at 353 K for 18 h with vigorous stirring, The precipitate was then filtered, washed several times with hot distilled water and dried in air at 353 K overnight, In this way, CuMI AlCO3-HTLcs and M-I AlCO3-HTLcs were synthesized and characterized by means of XRD and IR, The catalysis of the above mentioned HTLcs were investigated in the phenol hydroxylation with H2O2. The results indicated that all of the copper-containing HTLcs had a higher catalytic activity in the reaction, However, those catalysts that did not contain copper had no catalytic activity in this reaction, This means that copper was the active center in the phenol hydroxylation. Meanwhile, the mechanism was also proposed, which could be used to explain the main reason for higher activity for CuCuAlCO3-HTLcs in the phenol hydroxylation and the effect of Mg2+, Zn2+, Co2+, Ni2+ on activity of CuMI AlCO3-HTLcs.

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The hydrogenation of alkali metals using lanthanide trichloride and naphthalene as catalyst has been studied. LnCl3(Ln = La, Nd, Sm, Dy, Yb) and naphthalene can catalyze the hydrogenation of sodium under atmospheric pressure and 40-degrees-C to form sodium hydride. The activities of lanthanide trichlorides are in the following order: LaCl3 > NdCl3 > SmCl3 > DyCl3 > YbCl3. Although lithium proceeds in the same catalytic reaction, the kinetic curve of the lithium hydrogenation is different from that of sodium. Lanthanide trichlorides display no catalytic effect on the hydrogenation of potassium in presence of naphthalene. The mechanism of this reaction has been studied and it is suggested that the anion-radical of alkali metal naphthalene complexes may be the intermediate for the hydrogenation of alkali metals and the function of LnCl3 is to catalyze the hydrogenation of the intermediate. The products are porous solids with high specific surface area (83 m2/g for NaH) and pyrophoric in air. They are far more active than the commercial alkali metal hydrides. The combination of these hydrides with some transition metal complexes exhibits high catalytic activity for the hydrogenation of olefins.

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An assessment of metal contamination in surface sediments of the Jiaozhou Bay, Qingdao, one of the rapidly developing coastal economic zones in China, is provided. Sediments were collected from 10 stations and a total of 15 heavy metals were analyzed. Concentrations of metals show significant variability and range from 210 to 620 ppm for Ti, 2.7 to 23 ppm for Ni, 4.2 to 28 ppm for Cu, 5.2 to 18 ppm for Pb, 12 to 58 ppm for Zn, 0.03 to 0.11 ppm for Cd, 5 to 51 ppm for Cr, 1.5 to 9.9 ppm for Co, 5.3 to 19 ppm for As, 12 to 32 ppm for Se, and 19 to 97 ppm for Sr. Based on concentration relationships and enrichment factor (EF) analyses, the results indicate that sediment grain size and organic matter played important roles in controlling the distribution of the heavy metals in surface sediments of the Jiaozhou Bay. The study shows that the sediment of the Jiaozhou Bay has been contaminated by heavy metals to various degrees, with prominent arsenic contributing the most to the contamination. The analysis suggests that the major sources of metal contamination in the Jiaozhou Bay are land-based anthropogenic ones, such as discharge of industrial waste water and municipal sewage and run-off. Notably, the elevated heavy metal concentrations of the Jiaozhou Bay sediments could have a significant impact on the bay's ecosystem. With the rapid economic development and urbanization around the Jiaozhou Bay, coastal management and pollution control should focus on these contaminant sources, as well as provide ongoing monitoring studies of heavy metal contamination within the bay.