SEU ground and flight data in static random access memories

This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed oil SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based oil the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data.

Refractive-index change and sensitivity improvement in holographic recording in LiNbO3:Ce:Cu crystals with green light

Nonvolatile holographic recording is performed with green light in LiNbO3:Ce:Cu crystals. The refractive-index change and the recording sensitivity are times better than those obtained by recording with red light, and higher optical fixing efficiency is obtained. Correspondingly, theoretical investigations are given.

Simulation of an apodizer's effect for high-density optical storage

The effect of an apodizer with two parallel taper refractive surfaces is theoretically investigated for high-density optical storage. The apodizer may modulate an incident Gaussian beam into an annular beam. Simulation shows that with the increasing inner radius of the modulated beam, the focal spot shrinks obviously. The depolarization effect gets strong simultaneously, which induces the circular symmetry loss of the focal spot. In this process, pattern density of the orthogonal and longitudinal diffractive fields increases remarkably.

A wideband sensitive holographic photopolymer

A novel wideband sensitive dry holographic photopolymer sensitized by rose bengal (RB) and methylene blue (MB) is fabricated, the holographic storage characteristics of which are investigated under different exposure wavelengths. The result shows that the sensitive spectral band exceeds 200 nm in visible light range, the maximum diffraction efficiency under different exposure wavelengths is more than 40% and decreases with the decrease of exposure wavelength, the exposure sensitivity is not change with the exposure wavelength. This photopolymer is appropriate for wavelength multiplexing or multi-wavelength recording in digital holographic storage.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.

Stress-facilitated LTD induces output plasticity through a synchronized-spikes and spontaneous unitary discharges the CA1 region of the hippocampus

Long-term potentiation (LTP) and long-term depression (LTD) of the excitatory synaptic inputs plasticity in the hippocampus is believed to underlie certain types of learning and memory. Especially, stressful experiences, well known to produce long-lasting strong memories of the event themselves, enable LTD by low frequency stimulation (LFS, 3 Hz) but block LTP induction by high frequency stimulation (HFS, 200 Hz). However, it is unknown whether stress-affected synaptic plasticity has an impact on the output plasticity. Thus, we have simultaneously studied the effects of stress on synaptic plasticity and neuronal output in the hippocampal CA1 region of anesthetized Wistar rats. Our results revealed that stress increased basal power spectrum of the evoked synchronized-spikes and enabled LTD induction by LFS. The induction of stress-facilitated LTD but not LFS induced persistent decreases of the power spectrum of the synchronized-spikes and the frequency of the spontaneous unitary discharges; However, HFS induced UP in non-stressed animals and increased the power spectrum of the synchronized-spikes, without affecting the frequency of the spontaneous unitary discharges, but HFS failed to induce UP in stressed animals without affecting the power spectrum of the synchronized-spikes and the frequency of the spontaneous unitary discharges. These observations that stress-facilitated LTD induces the output plasticity through the synchronized-spikes and spontaneous unitary discharges suggest that these types of stress-related plasticity may play significant roles in distribution, amplification and integration of encoded information to other brain structures under stressful conditions. (C) 2004 Elsevier Ireland Ltd and The Japan Neuroscience Society. All rights reserved.

The effect of acute stress on LTP and LTD induction in the hippocampal CA1 region of anesthetized rats at three different ages

Not all experiences are memorized equally well. Especially, some types of stress are unavoidable in daily life and the stress experience can be memorized for life. Previous evidence has showed that synaptic plasticity, such as long-term potentiation (LTP) that may be the major cellular model of the mechanism underlying learning and memory, is influenced by behavioral stress. However, the effect of behavioral stress on age-related synaptic plasticity in-vivo was primarily known. Here we found that the LTP induction in the hippocampal CA1 region of anesthetized rats obviously showed inverted-U shape related to ages (4, 10 and 74 weeks old rats), but low-frequency stimulation was unable to induce reliable long-term depression (LTD) in these animals. Furthermore, acute elevated platform (EP) stress enabled reliable LTD significantly and completely blocked LTP induction at these ages. Importantly, LTD after exposure to acute EP stress showed similar magnitude over these ages. The present results that stress enables LTD but impairs LTP induction at these three ages strengthen a view that stress experience-dependent LTD (SLTD) may underlie stress form of aberrant memories. (C) 2004 Elsevier B.V. All rights reserved.

Effects of unconditioned and conditioned aversive stimuli in an intense fear conditioning paradigm on synaptic plasticity in the hippocampal CA1 area in vivo

Repeated vivid recalls or flashbacks of traumatic memories and memory deficits are the cardinal features of post-traumatic stress disorder (PTSD). The underlying mechanisms are not fully understood yet. Here, we examined the effects of very strong fear conditioning (20 pairings of a light with a 1.5-mA, 0.5-s foot shock) and subsequent reexposure to the conditioning context (chamber A), a similar context (chamber B), and/or to the fear conditioned stimulus (CS) (a light) on synaptic plasticity in the hippocampal CA1 area in anesthetized Sprague-Dawley rats. The conditioning procedure resulted in very strong conditioned fear, as reflected by high levels of persistent freezing, to both the contexts and to the CS, 24 h after fear conditioning. The induction of long-term potentiation ON was blocked immediately after fear conditioning. It was still markedly impaired 24 h after fear conditioning; reexposure to the conditioning chamber A (CA) or to a similar chamber 13 (CB) did not affect the impairment. However, presentation of the CS in the CA exacerbated the impairment of LTP, whereas the CS presentation in a CB ameliorated the impairment so that LTP induction did not differ from that of control groups. The induction of long-term depression (LTD) was facilitated immediately, but not 24 h, after fear conditioning. Only reexposure to the CS in the CA, but not reexposure to either chamber A or B alone, or the CS in chamber B, 24 h after conditioning, reinstated the facilitation of LTD induction. These data demonstrate that unconditioned and conditioned aversive stimuli in an intense fear conditioning paradigm can have profound effects on hippocampal synaptic plasticity, which may aid to understand the mechanisms underlying impairments of hippocampus-dependent memory by stress or in PTSD. (c) 2005 Wiley-Liss, Inc.

Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors

The influence of gamma-radiation dose rate on the electrical properties of lead zirconate titanate capacitors was investigated. More severe degradations in dielectric constant, coercive field, remanent polarization and capacitance-voltage (C-V) curves occurred with increasing radiation dose at lower dose rates. The electrical properties exhibited distinct radiation dose rate dependence and the worst-case degradation occurred at the lowest dose rate. The radiation-induced degradation of parameters such as the coercive field drift and distortion of the C-V curve can be recovered partly through post-irradiation annealing.

Nanoelectronic Circuit Architectures Based on Single-Electron Turnstiles

Single-electron devices (SEDs) have ultra-low power dissipation and high integration density, which make them promising candidates as basic circuit elements of the next generation VLSI circuits. In this paper, we propose two novel circuit single-electron architectures: the single-electron simulated annealing algorithm (SAA) circuit and the single-electron cellular neural network (CNN). We used the MOSFET-based single-electron turnstile [1] as the basic circuit element. The SAA circuit consists of the voltage-controlled single-electron random number generator [2] and the single-electron multiple-valued memories (SEMVs) [3]. The random-number generation and variable variations in SAA are easily achieved by transferring electrons using the single-electron turnstile. The CNN circuit used the floating-gate single-electron turnstile as the neural synapses, and the number of electrons is used to represent the cells states. These novel circuits are promising in future nanoscale integrated circuits.

海马在情绪记忆中的作用

海马是中脑边缘系统的一个重要区域，不仅在学习和记忆中起着重要作用， 还在应激调控中起着关键作用。越来越多的报道表明，海马可能参与毒品成瘾。 本文围绕海马与成瘾、海马与应激的相互关系，应用行为学及电生理技术手段探 讨了海马在成瘾中的作用，并对应激的作用机制进行了研究。 第一部分试验首先研究了长期成瘾药物暴露对两种不同类型学习记忆的影 响，从而揭示成瘾对不同脑区的影响；我们还研究了长期毒品戒断对学习和记忆 的影响。用条件化位置偏爱/厌恶模型对海马在成瘾相关记忆中的作用进行了探 讨。实验结果提示，在成瘾过程中不同脑区发生了不同程度的适应性改变，从而 影响了该脑区相关的正常学习和记忆，其中慢性吗啡暴露损伤了海马依赖的空间 记忆提取，但长期戒断（戒断5 个星期）可以缓解成瘾导致的这些影响。另外， 海马在成瘾相关记忆中同样发挥了重要作用。吗啡偏爱形成后的环境线索再暴露 损伤海马突触长时程增强，提示了海马在环境线索诱导的药物渴求和复吸中可能 起着关键性作用。 第二部分试验主要探索了应激效应的作用机制及海马VR1 受体对抗应激效 应。发现含NR2B 的NMDA 受体参与了应激导致的海马突触可塑性改变，其阻 断剂Ro25-6981 阻断了应激易化的海马长时程抑制，避免了应激损伤的长时程增 强。另一方面，应激损伤海马依赖性的空间记忆提取，但是辣椒素(VR1 受体的 激动剂)直接注射入海马能逆转这种应激的损伤效应。相反，VR1 受体拮抗剂 capsazepin 处理产生了类似应激的损伤效应。提示了海马内VR1 受体可能是海马 记忆功能的一种重要受体系统。

Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.

新模糊形态学联想记忆网络的初步研究

人工神经网络理论已经被成功地应用于各种不同的模式识别问题 .重点研究了联想记忆网络 ,提出了一种新的基于形态学和模糊运算的联想记忆网络 ,即模糊形态学联想记忆网络FMAM .它与经典联想记忆和模糊联想记忆FAM有显著不同 .文中分析了FMAM的记忆能力和抗腐蚀 /膨胀噪声的能力 .自联想FMAM具有无限存储能力 ,能保证完全回忆 ,并且回忆在一步内完成 ,可模糊性解释等 .仿真实验验证了自联想FMAM的良好性能

双向联想记忆神经网络的一种编码策略

本文提出一种双向联想记忆神经网络的按‘位’加权编码策略，并给出了求取权值的速推算法．它将Ｋｏｓｋｏ双向联想记忆神经网络按海明距离进行模式匹配的原则，修正为按加权海明距离进行模式匹配，从而可以使得对不满足连续性的所谓“病态结构”的一类样本模式集，同样具有良好的联想能力．对二值图象模式存贮、联想的计算机模拟实验表明，此方法具有优良的性能和实用价值。

基于FPGA高速并行FFT处理器设计与实现

在研究快速傅里叶变换(FFT)算法的基础上,根据FPGA性能高、灵活性强、速度快的特点,提出了高效的基4-FFT处理器的实现方法。数据存储采用分块存储的方法,大大提高了存取速度。数据寻址采用新型的地址产生方法,可并行产生所需数据地址。同时,在蝶形单元的设计中很好的将并行运算技术和流水线技术相结合了起来,又进一步提高了运算速度。测试结果表明,时钟在50MHz时完成1024点FFT的时间为25.6μs,满足了应用实时性的要求。