Localized Solid-State Amorphization at Grain Boundaries in a Nanocrystalline Al Solid Solution Subjected to Surface Mechanical Attrition

Using high-resolution electron microscopy, localized solid-state amorphization (SSA) was observed in a nanocrystalline (NC) Al solid solution (weight per cent 4.2 Cu, 0.3 Mn, the rest being Al) subjected to a surface mechanical attrition treatment. It was found that the deformation-induced SSA may occur at the grain boundary (GB) where either the high density dislocations or dislocation complexes are present. It is suggested that lattice instability due to elastic distortion within the dislocation core region plays a significant role in the initiation of the localized SSA at defective sites. Meanwhile, the GB of severely deformed NC grains exhibits a continuously varying atomic structure in such a way that while most of the GB is ordered but reveals corrugated configurations, localized amorphization may occur along the same GB.

Statistics of dissipation and enstrophy induced by localized vortices

The ratios of enstrophy and dissipation moments induced by localized vorticity are inferred to be finite. It follows that the scaling exponents for locally averaged dissipation and enstrophy are equal. However, enstrophy and dissipation exponents measured over finite ranges of scales may be different. The cylindrical vortex profile that yields maximal moment ratios is determined. The moment ratios for cylindrical vortices are used to interpret differences in scale dependence of enstrophy and dissipation previously found in numerical simulations.

Formation, microstructure and development of the localized shear deformation in low-carbon steels

An investigation has been made into the effect of microstructural parameters on the propensity for forming shear localization produced during high speed torsional testing by split Hopkinson bar with different average rates of 610, 650 and 1500 s(-1) in low carbon steels. These steels received the quenched, quenched and tempered as well as normalized treatments that provide wide microstructural parameters and mechanical properties. The results indicate that the occurrence of the shear localization is susceptible to the strength of the steels. In other words, the tendency of the quenched steel to form a shear band is higher than that of the other two steels. It is also found that there is a critical strain at which the shear localization occurs in the steels. The critical strain value is strongly dependent on the strength of the steels. Before arriving at this point, the material undergoes a slow work-hardening. After this point, the material suffers work-softening, corresponding to a process during which the deformation is gradually localized and eventually becomes spatially correlated to form a macroscopic shear band. Examinations by SEM reveal that the shear localization within the band involves a series of sequential crystallographic and non-crystallographic events including the change in crystal orientation, misorientation, generation and even perhaps damage in microstructures such as the initiation, growth and coalescence of the microcracks. It is expected that the sharp drop in the load-carrying capacity is associated with the growth and coalescence of the microcracks rather than the occurrence of the shear localization, but the shear localization is seen to accelerate the growth and coalescence of the microcracks. The thin foil observations by TEM reveal that the density of dislocations in the band is extremely high and the tangled arrangement and cell structure of dislocations tends to align along the shear direction. The multiplication and interaction of dislocations seems to be responsible for work-hardening of the steels. The avalanche of the dislocation cells corresponds to the sharp drop in shear stress at which the deformed specimen is broken. Double shear bands and kink bands are also observed in the present study. The principal band develops first and its width is narrower than that of the secondary band.

New Numerical Algorithms in SUPER CE/SE and Their Applications in Explosion Mechanics

The new numerical algorithms in SUPER/CESE and their applications in explosion mechanics are studied. The researched algorithms and models include an improved CE/SE (space-time Conservation Element and Solution Element) method, a local hybrid particle level set method, three chemical reaction models and a two-fluid model. Problems of shock wave reflection over wedges, explosive welding, cellular structure of gaseous detonations and two-phase detonations in the gas-droplet system are simulated by using the above-mentioned algorithms and models. The numerical results reveal that the adopted algorithms have many advantages such as high numerical accuracy, wide application field and good compatibility. The numerical algorithms presented in this paper may be applied to the numerical research of explosion mechanics.

Optimization of positions and currents of tokamak poloidal field coils using genetic algorithms

Plasma equilibrium geometry has a great influence on the confinement and magnetohydrodynamic stability in tokamaks. The poloidal field (PF) system of a tokamak should be optimized to support the prescribed plasma equilibrium geometry. In this paper, a genetic algorithm-based method is applied to solve the optimization of the positions and currents of tokamak PF coils. To achieve this goal, we first describe the free-boundary code EQT Based on the EQT code, a genetic algorithm-based method is introduced to the optimization. We apply this new method to the PF system design of the fusion-driven subcritical system and plasma equilibrium geometry optimization of the Experimental Advanced Superconducting Tokamak (EAST). The results indicate that the optimization of the plasma equilibrium geometry can be improved by using this method.

Phase unwrapping algorithms, respectively, based on path-following and discrete cosine transform

This paper describes a path-following phase unwrapping algorithm and a phase unwrapping algorithm based on discrete cosine transform (DCT) which accelerates the Computation and suppresses the propagation of noise. Through analysis of fringe pattern with serious noises simulated in mathematic model, we make a contrast between path-following algorithm and DCT algorithm. The advantages and disadvantages or analytical fringe pattern are also given through comparison of two algorithms. Three-dimensional experimental results have been given to prove the validity of these algorithms. Despite DCT phase unwrapping technique robustness and speed in some cases, it cannot be unwrapping inconsistencies phase. The path-following algorithm can be used in automation analysis of fringe patterns with little influence of noise. (c) 2007 Elsevier GmbH. All rights reserved.

Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well

We have investigated the exciton spin relaxation in a GaInNAs/GaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers. (c) 2008 American Institute of Physics.

Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles

The Pt nanoparticles (NPs), which posses the wider tunable localized-surface-plasmon (LSP) energy varying from deep ultraviolet to visible region depending on their morphology, were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs, which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO, such as emission from Pt itself and light multi-scattering at the interface, were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors.

Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells

We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by time-resolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10 mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process. (C) 2009 The Japan Society of Applied Physics

Design of triangular lattice photonic crystals using genetic algorithms

Genetic Algorithms (GAs) were used to design triangular lattice photonic crystals with large absolute band-gap. Considering fabricating issues, the algorithms represented the unit cell with large pixels and took the largest absolute band-gap under the fifth band as the objective function. By integrating Fourier transform data storage mechanism, the algorithms ran efficiently and effectively and optimized a triangular lattice photonic crystal with scatters in the shape of 'dielectric-air rod'. It had a large absolute band gap with relative width (ratio of gap width to midgap) 23.8%.

Non-exponential photoluminescence decay dynamics of localized carriers in disordered InGaN/GaN quantum wells: the role of localization length

In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered InGaN/GaN quantum wells. The luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. Adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by Rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. Combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 Optical Society of America.

Localized exciton dynamics in AlInGaN alloy

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved PL (TRPL) at various temperatures. The fast red-shift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/,tau)13], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed QDs or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent beta on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered QDs. Furthermore, the localized states are found to have 0D density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.