Age and growth of an endemic cyprinid fish, Spinibarbus yunnanensis, from Lake Fuxian, China

Age and growth of Spinibarbus yunnanensis Tsu in Lake Fuxian were investigated by examination of annuli from scales, dorsal fin spines, and otoliths. Sectioned otoliths exhibited the clearest and the most regular annuli. The formation of false annuli, which regularly arose on scales and dorsal fin spines during the juvenile stage, may be caused by a change in diet during development. The parameters for the von Bertalanffy growth curve were: K = 0.105, L-infinity = 950 mm, t(0) = -0.22 year for both sexes. W-infinity, calculated from the relationship W-infinity = aL(infinity)(b), was 10,352 g.

Population growth and physiological characteristics of microalgae in a miniaturized bioreactor during space flight

A strain of microalgae (Anabaena siamensis) had been cultured in a miniaturized bioreactor during a retrievable satellite flight for 15 days. By means of remote sensing equipment installed in the satellite, we gained the growth curve of microalgae population in space every day in real time. The curve indicated that the growth of microalgae in space was slower than the control on ground. Inoculation of the retrieved microalgae culture showed that the growth rate was distinctively higher than ground control. But after several generations, both cultures indicated similar growth rates. Those data showed that algae, can adapt to space environment easily which may be valuable for designing more complex bioreactor and controlled ecological life support system in future experiment. (C) 2006 Elsevier Ltd. All rights reserved.

The growth patterns of juvenile and precocious Chinese mitten crabs, Eriocheir sinensis (Decapoda, Grapsidae), stocked in freshwater lakes of China

Stocking experiments with Eriocheir sinensis were conducted in two small, shallow lakes to study its growth pattern in 1994-1997. For the initially immature crabs, carapace width (CW) increases from 21.2 +/- 0.4 mm (mean +/- s.e.) for females and 22.3 +/- 0.5 mm for males in January, to 65.4 +/- 0.5 mm for females and 66.9 +/- 0.6 mm for males in October. There is no significant difference in CW and carapace length (CL), although there is a large difference in body weight (BW) between sexes in every month from January to August when crabs are juvenile, however, there are significant differences in CW, CL. and BW between sexes after September when the crabs become sexually mature. The growth curve from January to October fits a logistic equation and may be expressed as CW = 75.7 (1 + exp (0.914 - 0.011t))(-1) for females, and CW = 77.5 (1 + exp (0.889 - 0.011t))-1 for males, where CW is in mm, t in days. For precocious crabs (reaching maturity by the first autumn, CW does not change much from January to July, which indicates that precocious crabs stop growing. Like juveniles, the precocious crabs show no differences in CW and CL, but do show a statistically significant difference in BW between sexes.

Functional analysis of FP25K of Helicoverpa armigera single nucleocapsid nucleopolyhedrovirus

The fp25k gene of Helicoverpa armigera single nucleocapsid nucleopolyhedrovirus (HearNPV) was studied. HearNPV fp25k gene transcription was found starting from about 18 h post-infection, and protein could be detected from the same time with antiserum against FP25K. To study the function of HearNPV fp25k, a recombinant HearNPV (HaBacWD11) with an enhanced green fluorescent protein (GFP) gene replacing the fp25k was constructed using HaBacHZ8, a bacmid of HearNPV that lacks the polyhedrin gene. Growth curve analysis showed that HaBacWD11 produced higher titres of budded viruses (BVs) than its wild-type counterpart HaBacHZ8-GFP. Electron microscopic analysis indicated that at the late stage of infection, the number of intranuclear enveloped nucleocapsids in HaBacWD11-infected cells was much less than that of HaBacHZ8-GFP. A rescue recombinant virus HaBacWD14 was constructed by reintroducing fp25k gene into HaBacWD11. The growth curve and electron microscopic analysis of the rescued recombinant confirmed that the increase of BV yield and the decrease of the virion production in infected cells were the result of fp25k deletion. The expression of membrane fusion protein (Ha133) and ODV-E66 were studied using the FP25K mutants HaBacWD11 and HaBacHZ8-GFP. Unlike FP25K mutants in Autographa californica multicapsid NPV (AcMNPV), which caused an increase in the expression of membrane fusion protein GP64 and a decrease of ODV-E66, no obvious changes at the expression level of Ha133 and ODV-E66 were observed in HearNPV FP25K mutant.

The hydrogen permeation investigation of API X56 steel in sea mud

It was found that the corrosion rate of steel in the sea mud with sulfate-reducing bacteria (SRB) could be as high as 10 times of that in the sea mud without SRB. And the hydrogen permeation reaction would occur when metals were corroded. So it is necessary to investigate the effect of living SRB on hydrogen permeation in the sea mud. Cathodic potential was often added to metals in order to protect them. But hydrogen permeation could be affected by the cathodic potential. So it is also necessary to study the effect of cathodic potential on hydrogen permeation. In this paper, the hydrogen permeation actions of APT X56 steel in the sea mud with and without SRB at corrosion and cathodic potential were studied with an improved Devanathan-Stachurski's electrolytic cell. Experimental results showed that during the growth of SRB, the current density curve of hydrogen permeation was accordant with the growth curve of SRB. But the hydrogen permeation current density of APT X56 steel hardly changed in the sterilized sea mud. Compared with the hydrogen permeation current density of APT X56 steel in the sterilized sea mud, the hydrogen permeation of APT X56 steel in the sea mud could be accelerated by living SRB. Experimental results also showed that the hydrogen permeation current density increased rapidly when the cathodic potential was added to the three-electrode system of the cathodic cell, and then the hydrogen permeation current density could obtain a stable value slowly. So the cathodic potential added to the cathodic cell could accelerate hydrogen permeation.

Optical Diagnostic and Modeling Solution Growth Process of Sodium Chlorate Crystals

Both a real time optical interferometric experiment and a numerical simulation of two-dimension non-steady state model were employed to study the growth process of aqueous sodium chlorate crystals. The parameters such as solution concentration distribution, crystal dimensions, growth rate and velocity field were obtained by both experiment and numerical simulation. The influence of earth gravity during crystal growth process was analyzed. A reasonable theory model corresponding to the present experiment is advanced. The thickness of concentration boundary layer was investigated especially. The results from the experiment and numerical simulation match well.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Modeling of Ammonothermal Growth of Nitrides

Bulk single crystals of GaN and AlN can be grown from supercritical fluids using the ammonothermal method, which utilizes ammonia as fluid rather than water as in the hydrothermal process. In this process, a mineralizer such as amide, imide or nitride is used to attack a bulk nitride feedstock at temperatures from 200°C to 500°C and pressures from 1 to 4 kbar. Ammonothermal systems have been modeled here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the fluid flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. The effects of particle size on flow pattern and temperature distribution in an autoclave are analyzed.

Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport

Single crystal gallium nitride (GaN) is an important technological material used primarily for the manufacture of blue light lasers. An important area of contemporary research is developing a viable growth technique. The ammonothermal technique is an important candidate among many others with promise of commercially viable growth rates and material quality. The GaN growth rates are a complicated function of dissolution kinetics, transport by thermal convection and crystallization kinetics. A complete modeling effort for the growth would involve modeling each of these phenomena and also the coupling between these. As a first step, the crystallization and dissolution kinetics were idealized and the growth rates as determined purely by transport were investigated. The growth rates thus obtained were termed ‘transport determined growth rates’ and in principle are the maximum growth rates that can be obtained for a given configuration of the system. Using this concept, a parametric study was conducted primarily on the geometric and the thermal boundary conditions of the system to optimize the ‘transport determined growth rate’ and determine conditions when transport might be a bottleneck.

Progress In Modeling Of Fluid Flows In Crystal Growth Processes

Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Modeling of Ammonothermal Growth of Gallium Nitride Single Crystals

Ammonothermal growth of GaN crystals with a retrograde solubility has been modeled and simulated here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow in the porous charge is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. For the case of retrograde solubility, the charge is put above the baffle. The temperature difference between the dissolving zone and growth zone is found smaller than that applied on the sidewall of autoclave. The baffle opening has a strong effect on the nutrient transport and supersaturation of GaN species in the growth zone.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].