Modeling Ammonothermal Growth of GaN Crystals

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Autoria(s): Pendurti S; 陈启生; Prasad V

Data(s)	09/08/2004
Identificador	http://dspace.imech.ac.cn/handle/311007/13881 http://www.irgrid.ac.cn/handle/1471x/6694
Palavras-Chave	#力学
Tipo	会议论文