619 resultados para hydrothermal crystal growth

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Composite sapphire/Ti:sapphire crystals for high-power laser application were grown by the hydrothermal method. The results of the X-ray rocking curve analysis indicate high crystalline quality of the surface Al2O3 material. The strong bonding between the overgrown Al2O3 and seed Ti:Al2O3 crystals is indispensable for withstanding high thermal stresses produced by intense optical pumping. The optical loss at the boundary of the composite crystal is considerably low, indicating the lack of scattering centers. (c) 2005 Elsevier B.V. All rights reserved.

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ZnO crystals with dimensions of 30 x 38 x 8 turn 3 have been grown by the hydrothermal method using a mixed solution of KOH, LiOH and H2O2. The growing rates for +c(0001) and -c(000 (1) over bar) were 0.17 and 0.09 mm/day, respectively. The crystal color was very light green for +c sector and dark brown for -c sector. For the +c sector, the resistivity at room temperature was 80 0 cm, the carrier concentration was about 10(4)/cm(3), and the mobility was about 100 cm(2)/Vs. The full-width at half-maximum (FWHM) of double axis X-ray rocking curve for the polished Zn face cut from +c sector was 45 arcsec. The photoluminescence (PL) spectrum and the absorption spectrum of +c part of the crystals at room temperature were also reported and discussed in this paper. (c) 2008 Elsevier B.V. All rights reserved.

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A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.

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The property of crystal depends seriously on the solution concentration distribution near the growth surface of a crystal. However, the concentration distributions are affected by the diffusion and convection of the solution. In the present experiment, the two methods of optical measurement are used to obtained velocity field and concentration field of NaClO3 solution. The convection patterns in sodium chlorate (NaClO3) crystal growth are measured by Digital Particle image Velocimetry (DPIV) technology. The 2-dimentional velocity distributions in the solution of NaClO3 are obtained from experiments. And concentration field are obtained by a Mach-Zehnder interferometer with a phase shift servo system. Interference patterns were recorded directly by a computer via a CCD camera. The evolution of velocity field and concentration field from dissolution to crystallization are visualized clearly. The structures of velocity fields were compared with that of concentration field.

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The magnetic damping effect of the non-uniform magnetic field on the floating-zone crystal growth process in microgravity is studied by numerical simulation. The results show that the non-uniform magnetic field with designed configuration can effectively reduce the flow near the free surface and then in the melt zone. At the same time, the designed magnetic field can improve the impurity concentration non-uniformity along the solidification interface. The primary principles of the magnetic field configuration design are also discussed.

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The linear diffusion-reaction theory with finite interface kinetics is employed to describe the dissolution and the growth processes. The results show that it is imperative to consider the effect of the moving interfaces on the concentration distribution at the growth interface for some cases. For small aspect ratio and small gravity magnitude, the dissolution and the growth interfaces must be treated as the moving boundaries within an angle range of 0 degrees < gamma < 50 degrees in this work. For large aspect ratio or large gravity magnitude, the effect of the moving interfaces on the concentration distribution at the growth interface can be neglected except for gamma < - 50 degrees.

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The magnetic fields produced by electrical coils are designed for P-doped Si crystal growth in a floating full zone in microgravity environment. The fields are designed specially to reduce the how near the free surface and then in the melt zone by adjusting the coil positions near the melt zone. The effects of the designed magnetic fields on reducing the Row velocity and the non-uniformity of the concentration distribution in the melt zone are better than those of the case of a uniform longitudinal magnetic field, obtained by numerical simulation. It is expected to improve the radial macro-segregation and reduce the convection in the crystal growth at the same time by using the designed magnetic field.

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An optical diagnostic system consisting of the Mach-Zehnder interferometer with the phase shift device and an image processor has been developed for the study of the kinetics of the crystal growing process. The dissolution and crystallization process of NaClO3 crystal has been investigated. The concentration distributions around a growing and dissolving crystal have been obtained by using phase-shift of four-steps theory for the interpretation of the interferograms. The convection (a plume flow) has been visualized and analyzed in the process of the crystal growth. The experiment demonstrates that the buoyancy convection dominates the growth rate of the crystal growing face on the ground-based experiment.

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Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mechanics. Most crystal growth processes involve fluid flows, such as flows in the melt, solution or vapor. Theoretical modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic devices. The application of devices requires large diameter crystals with a high degree of crystallographic perfection, low defect density and uniform dopant distribution. In this article, the flow models developed in modeling of the crystal growth processes such as Czochralski, ammonothermal and physical vapor transport methods are reviewed. In the Czochralski growth modeling, the flow models for thermocapillary flow, turbulent flow and MHD flow have been developed. In the ammonothermal growth modeling, the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer systems. In the physical vapor transport growth modeling, the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor growth. In addition, perspectives for future studies on crystal growth modeling are proposed. (c) 2008 National Natural Science Foundation of China and Chinese Academy of Sciences. Published by Elsevier Limited and Science in China Press. All rights reserved.

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During the process of lysozyme protein crystallization with batch method, the macroscopic flow field of solid/liquid system was observed by particle image velocimetry (PIV). Furthermore, a normal growth rate of (110) face and local flow field around a single protein crystal were obtained by a long work distance microscope. The experimental results showed that the average velocity, the maximal velocity of macroscopic solid/liquid system and the velocity of local flow field around single protein crystal were fluctuant. The effective boundary layer thickness delta(eff), the concentration at the interface Q and the characteristic velocity V were calculated using a convection-diffusion model. The results showed that the growth of lysozyme crystal in this experiment was dominated by interfacial kinetics rather than bulk transport, and the function of buoyancy-driven flow in bulk transport was small, however, the effect of bulk transport in crystal growth had a tendency to increase with the increase of lysozyme concentration. The calculated results, also showed that the order of magnitude of shear force was about 10(-21) N, which was much less than the bond force between the lysozyme molecules. Therefore the shear force induced by buoyancy-driven flows cannot remove the protein molecules from the interface of crystal.

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The pure diffusion process has been often used to study the crystal growth of a binary alloy in the microgravity environment. In the present paper, a geometric parameter, the ratio of the maximum deviation distance of curved solidification and melting interfaces from the plane to the radius of the crystal rod, was adopted as a small parameter, and the analytical solution was obtained based on the perturbation theory. The radial segregation of a diffusion dominated process was obtained for cases of arbitrary Peclet number in a region of finite extension with both a curved solidification interface and a curved melting interface. Two types of boundary conditions at the melting interface were analyzed. Some special cases such as infinite extension in the longitudinal direction and special range of Peclet number were reduced from the general solution and discussed in detail.

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The steady and axisymmetric crystal growth process of floating zone model was studied numerically to concern with the influence of convection and phase change on effective segregation. An iteration method of numerical simulation considering both thermocapillary and buoyancy effects for GaAs crystal growth gave the effective segregation coefficient, which was compared with the space experiment of GaAs on board the Chinese recoverable satellite. The calculated segregation coefficient of a two-dimensional model was found to be smaller than the one suggested by space experiment with the simplified assumption of an one-dimensional model.

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The influence of low gravity level on crystal growth in the floating zone, which involves thermocapillary convection, phase change convection, thermal and solutal diffusion, is investigated numerically by a finite element method for the silicon crystal growth process. The velocity, temperature, concentration fields and phase change interfaces depending on heating temperature and growth rates are analyzed. The influence of low gravity level on the concentration is studied especially. The results show that the non-uniformities of concentration are about 10(-3) for growth rate nu(p) = 5.12 x 10(-8) m/s, 10(-2) for nu(p) = 5.12 x 10(-7) m/s and relatively larger for larger growth rate in the gravity level g = 0-9.8 m/s2. The thermocapillary effect is strong in comparison with the Bridgman system, and the level of low gravity is relatively insensitive for lower growth rates.