Atomic configurations of dislocation core and twin boundaries in 3C-SiC studied by high-resolution electron microscopy

The defects in 3C-SiC film grown on (001) plane of Si substrate were studied using a 200 kV high-resolution electron microscope with point resolution of 0.2 nm. A posterior image processing technique, the image deconvolution, was utilized in combination with the image contrast analysis to distinguish atoms of Si from C distant from each other by 0.109 nm in the [110] projected image. The principle of the image processing technique utilized and the related image contrast theory is briefly presented. The procedures of transforming an experimental image that does not reflect the crystal structure intuitively into the structure map and of identifying Si and C atoms from the map are described. The atomic configurations for a 30 degrees partial dislocation and a microtwin have been derived at atomic level. It has been determined that the 30 degrees partial dislocation terminates in C atom and the segment of microtwin is sandwiched between two 180 degrees rotation twins. The corresponding stacking sequences are derived and atomic models are constructed according to the restored structure maps for both the 30 degrees partial dislocation and microtwin. Images were simulated based on the two models to affirm the above-mentioned results.

High resolution electron microscopy study of single chain single crystals of gutta percha

Single chain single crystals (SCSC) of gutta percha (GP) were prepared by a dilute-solution spraying method. Electron diffraction (ED) patterns revealed that the single chain single crystal was of a new crystalline modification, the delta form. The images of SCSC of GP obtained with a high resolution electron microscope (HREM) showed a two dimensional periodic structure. Most of the images consisted of lattice fringes derived from the (001) zone. This is the first time that the single chain single crystal images of GP have been observed at a molecular level. Micrographs were image processed using optical filtering methods to improve the signal-to-noise ratio, and were compared with computer-generated simulations of the images. From the viewpoint of the defects seen in high resolution images, the crystal formation and melting processes are discussed. (C) 1998 Elsevier Science Ltd. All rights reserved.

High-Resolution Finite Compact Difference Schemes for Hyperbolic Conservation Laws

A finite compact (FC) difference scheme requiring only bi-diagonal matrix inversion is proposed by using the known high-resolution flux. Introducing TVD or ENO limiters in the numerical flux, several high-resolution FC-schemes of hyperbolic conservation law are developed, including the FC-TVD, third-order FC-ENO and fifth-order FC-ENO schemes. Boundary conditions formulated need only one unknown variable for third-order FC-ENO scheme and two unknown variables for fifth-order FC-ENO scheme. Numerical test results of the proposed FC-scheme were compared with traditional TVD, ENO and WENO schemes to demonstrate its high-order accuracy and high-resolution.

Fiber Bragg grating temperature sensor for multiplexed measurement with high resolution

A novel fiber Bragg grating temperature sensor is proposed and experimentally demonstrated with a long-period grating as a linear response edge filter to convert wavelength into intensity-encoded information for interrogation. The sensor is embedded into an aluminum substrate with a larger coefficient of thermal expansion to enhance its temperature sensitivity. A large dynamic range of 110 degreesC and a high resolution of 0.02 degreesC are obtained in the experiments. The technique can be used for multiplexed measurements with one broadband source and one long-period grating, and therefore is low Cost. (C) 2004 Society of PhotoOptical Instrumentation Engineers.

A high accuracy image sensor for sinusoidal phase-modulating interferometry

We proposed a high accuracy image sensor technique for sinusoidal phase-modulating interferometer in the field of the surface profile measurements. It solved the problem of the CCD's pixel offset of the same column under two adjacent rows, eliminated the spectral leakage, and reduced the influence of external interference to the measurement accuracy. We measured the surface profile of a glass plate, and its repeatability precision was less than 8 nm and its relative error was 1.15 %. The results show that it can be used to measure surface profile with high accuracy and strong anti-interference ability. (C) 2007 Elsevier GmbH. All rights reserved.

A high-speed image sensing technique with adjustable frame rate based on an ordinary CCD

In the sinusoidal phase modulating interferometer technique, the high-speed CCD is necessary to detect the interference signals. The reason of ordinary CCD's low frame rate was analyzed, and a novel high-speed image sensing technique with adjustable frame rate based on ail ordinary CCD was proposed. And the principle of the image sensor was analyzed. When the maximum frequency and channel bandwidth were constant, a custom high-speed sensor was designed by using the ordinary CCD under the control of the special driving circuit. The frame rate of the ordinary CCD has been enhanced by controlling the number of pixels of every frame; therefore, the ordinary of CCD can be used as the high frame rate image sensor with small amount of pixels. The multi-output high-speed image sensor has the deficiencies of low accuracy, and high cost, while the high-speed image senor with small number of pixels by using this technique can overcome theses faults. The light intensity varying with time was measured by using the image sensor. The frame rate was LIP to 1600 frame per second (f/s), and the size of every frame and the frame rate were adjustable. The correlation coefficient between the measurement result and the standard values were higher than 0.98026, and the relative error was lower than 0.53%. The experimental results show that this sensor is fit to the measurements of sinusoidal phase modulating interferometer technique. (c) 2007 Elsevier GmbH. All rights reserved.

Structural role of fluoride in aluminophosphate sol-gel glasses: High-resolution double-resonance NMR studies

The local structure of Na-Al-P-O-F glasses, prepared by a novel sol-gel route, was extensively investigated by advanced solid-state NMR techniques. Al-21{F-19} rotational echo double resonance (REDOR) results indicate that the F incorporated into aluminophosphate glass is preferentially bonded to octahedral Al units and results in a significant increase in the concentration of six-coordinated aluminum. The extent of Al-F and Al-O-P connectivities are quantified consistently by analyzing Al-27{P-31} and Al-21{F-19} REDOR NMR data. Two distinct types of fluorine species were identified and characterized by various F-19{Al-27}, F-19{Na-23}, and F-19{P-31} double resonance experiments, which were able to support peak assignments to bridging (Al-F-Al, -140 ppm) and terminal (Al-F, -170 ppm) units. On the basis of the detailed quantitative dipole-dipole coupling information obtained, a comprehensive structural model for these glasses is presented, detailing the structural speciation as a function of composition.

Metabolic changes in rat prefrontal cortex and hippocampus induced by chronic morphine treatment studied ex vivo by high resolution H-1 NMR spectroscopy

Ex vivo H-1 NMR spectroscopy was used to measure changes in the concentrations of cerebral metabolites in the prefrontal cortex (PFC) and hippocampus of rats subjected to repeated morphine treatment known to cause tolerance/dependence. The results show th

Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy

We report the quantitative strain characterization in semiconductor heterostructures of silicon-germaniums (Si(0.76)Geo(0.24)) grown on Si substrate by an ultra-high vacuum chemical vapor deposition system. The relaxed SiGe virtual substrate has been achieved by thermal annealing of the SiGe film with an inserted Ge layer. Strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis.

Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.

Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.

Numerical study of a high-resolution far-field scanning optical microscope via a surface plasmon-modulated light source

In this paper, we analyze light transmission through a single subwavelength slit surrounded by periodic grooves in layered films consisting of An and dielectric material. A subwavelength grating is scanned numerically by the finite difference time domain method in two dimensions. The results show that the transmission field can be confined to a spot with subwavelength width in the far field and can be useful in the application of a high-resolution far-field scanning optical microscope.

Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 mum. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.