111 resultados para frequency conversion

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Based on the ripple transfers of electric-field amplitude and phase in frequency tripling, simple formulas are derived for the harmonic laser's beam-quality factor M-3omega(2), with an arbitrary fundamental incidence to ideal nonlinear crystals. Whereas the harmonic beam's quality is generally degraded, the beam's divergence is similar to that of the fundamental after nonlinear frequency conversion. For practical crystals with periodic surface ripples that are caused by their machining, a multiorder diffractive model is presented with which the focusing properties of harmonic beams can be studied. Predictions of the theories are shown to be in excellent agreement with full numerical simulations. (C) 2002 Optical Society of America.

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Trichromatic manipulation of Kerr nonlinearity in a three-level A atomic configuration is investigated theoretically. It is shown that for a weak monochromatic probe field, the enhanced Kerr nonlinearity can be achieved in multiple separate transparent windows due to interference effect of multiple two-photon Raman channels. Furthermore, the property of Kerr nonlinearity can be controlled by the sum of the relative phases of the sideband components of the trichromatic pump field compared to the central component.

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The gain properties of near-collinear degenerated phase-matched optical parametric amplification (OPA) using PPKTP crystal are investigated theoretically. The results indicate that the type-0 phase matching of PPKTP has larger accepted angle and better gain spectrum by tuning crystal temperature or rotating crystal angle.

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基于能量守恒和三波耦合波方程, 建立了超短脉冲在参变过程中二次谐波产生时的I类和II类相位匹配条件、基波与谐波之间的群速延迟时间、以及群速失配对晶体长度限制的理论基础。以负单轴非线性光学晶体CsLiB6O10为例, 分析和数值计算了超短脉冲宽度为100 fs时, 谐波的群速匹配长度随基波波长变化的规律。研究结果表明在I类相位匹配条件下, 基波波长为642 nm时, 群速延迟最小, 相应的群速匹配晶体长度最长为19.1 mm;在II类相位匹配条件下, 基波波长为767 nm, 群速延迟最小, 群速匹配长度最

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简要介绍了固体拉曼激光器的研究现状,总结了几种常用的同体拉曼晶体[LiIO3,Ba(NO3)2,CaWO4]的受激拉曼实验特性,并对如何设计各种形式的拉曼激光装置以取得良好的频率转换做了分析。最后对同体拉曼激光器的发展做了展望。

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对多横模全固态激光器使用正交频率变换进行了分析,计算了频率转换效率与激光发散角的关系。使用双KTP晶体正交倍频的方法,对Nd∶YAG激光器输出的含有高阶横模的激光进行倍频实验研究。在1064 nm Nd∶YAG激光基波功率密度为121 MW/cm2时,其谐波转换效率达到75.5%。研究表明,对于光束质量较差的基波激光,采用正交频率变换的方式,适当选择晶体参数,同样可以获得较高效率的二次谐波输出。

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An optimal feedback control of broadband frequency up-conversion in BBO crystal is experimentally demonstrated by shaping femto-second laser pulses based on genetic algorithm, and the frequency up-conversion efficiency can be enhanced by similar to 16%. SPIDER results show that the optimal laser pulses have shorter pulse-width with the little negative chirp than the original pulse with the little positive chirp. By modulating the fundamental spectral phase with periodic square distribution on SLM-256, the frequency up-conversion can be effectively controlled by the factor of about 17%. The experimental results indicate that the broadband frequency up-conversion efficiency is related to both of second harmonic generation (SHG) and sum frequency generation (SFG), where the former depends on the fundamental pulse intensity, and the latter depends on not only the fundamental pulse intensity but also the fundamental pulse spectral phase. (c) 2006 Elsevier B.V. All rights reserved.

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This paper reports on the successful preparation and a detailed study on the up-conversion properties of Er3+ -doped TeO2-ZnO-PbCl2 oxylialide tellurite glasses. Three intense emissions centered at around 527, 549 and 666 nm have been clearly observed under 977 nm excitation and the involved mechanisms have been explained. The green emissions centered at 527 and 549 nin are due to the H-2(11/2 ->) I-4(15/2) and S-4(3/2) -> I-4(15/2) transitions, and the red up-conversion emission centered at 666 nm is associated with the F-4(9/2) -> I-4(15/2) transitions of Er3+ ions, respectively. The quadratic dependence of fluorescence on excitation laser power confirm that two-photons contribute to up-conversion of the green-red emissions. (c) 2005 Elsevier B.V. All rights reserved.

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Harmonic millimeter wave (mm-wave) generation and frequency up-conversion are experimentally demonstrated using optical injection locking and Brillouin selective sideband amplification (BSSA) induced by stimulated Brillouin scattering in a 10-km single-mode fiber. By using this method, we successfully generate third-harmonic mm-wave at 27 GHz (f(LO) - 9 GHz) with single sideband (SSB) modulation and up-convert the 2GHz intermediate frequency signal into the mm-wave band with single mode modulation of the SSB modes. In addition, the mm-wave carrier obtains more than 23 dB power gain due to the BSSA. The transmission experiments show that the generated mm-wave and up-converted signals indicate strong immunity against the chromatic dispersion of the fibers.

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The up-conversion properties of Tm3+/Yb3+ codoped oxyfluoride glass-ceramics under 980 nm excitation were investigated. Intense blue up-conversion luminescence due to the Tm3+: (1)G(4) -> H-3(6) transition was observed in the glass-ceramics. The intensity of the blue up-conversion luminescence in a 1 mol% YbF3-containing glass-ceramic was found to be about 40 times stronger than that in the precursor oxyfluoride glass. The up-conversion mechanism is proposed. The reason for the intense Tm3+ up-conversion luminescence in the oxyfluoride glass-ceramics and the concentrations dependence of upconversion luminescence are also discussed. (c) 2005 Elsevier B.V. All rights reserved.

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This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.

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This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

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A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in a 0.35um SiGe BiCMOS technology. The filter's -3dB cutoff frequency f(0) can be tuned from 4MHz to 40MHz. A novel translinear transconductor (Gm) cell is used to implement the widely tunable and high linear filter. The filter has -0.5dB passband gain, 28nV/Hz(1/2) input referred noise, -2dBVrms passband IIP3, 24dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 16mA (with f(0)=20MHz) from 3.3 V supply, and occupy an area of 0.45 mm(2).

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This paper presents a high speed ROM-less direct digital frequency synthesizer (DDFS) which has a phase resolution of 32 bits and a magnitude resolution of 10 bits. A 10-bit nonlinear segmented DAC is used in place of the ROM look-up table for phase-to-sine amplitude conversion and the linear DAC in a conventional DDFS.The design procedure for implementing the nonlinear DAC is presented. To ensure high speed, current mode logic (CML) is used. The chip is implemented in Chartered 0.35μm COMS technology with active area of 2.0 × 2.5 mm~2 and total power consumption of 400 mW at a single 3.3 V supply voltage. The maximum operating frequency is 850 MHz at room temperature and 1.0 GHz at 0 ℃.