26 resultados para face inversion effect
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
We compared early stages of face processing in young and older participants as indexed by ERPs elicited by faces and non-face stimuli presented in upright and inverted orientations. The P1 and N170 components were larger in older than in young participant
Resumo:
The effects of vacuum-induced coherence (VIC) on the properties of the absorption and gain of the probe field in an equispaced three-level ladder atomic system are investigated. It is found that lasing without inversion (LWI) is remarkably enhanced due to the effect of VIC in the case of the small incoherent pump rate.
Resumo:
A reversible electrochromic effect accompanying domain-inversion during the electrical poling process in LiNbO3: Ru: Fe crystals at room temperature has been observed. In electrode area, both electrochromism and domain-inversion occur alternately, and electrochromism is also reversible during back-switch poling, which is experimentally verified and whose mechanism is briefly explained using a microstructure ferroelectric model. In addition, because of the enhancing elcctrochromic effect, different from the undoped LiNbO3 crystals, the coercive riled (21.0 kV/mm or so) measured in LiNbO3: Ru: Fe is lower than its breakdown field, thus providing a possible new technique for realizing the domain-inversion by constant electric field rather than a pulsed one.
Resumo:
A reversible electrochromic effect during the electrical poling process in LiNbO3:Ru:Fe crystals at room temperature is observed. In electrode area, both electrochromism and domain-inversion occur mutually and electrochromism is reversible during back-switch poling, which are experimentally verified, and a microstructure model to explain the mechanism is proposed. In addition, different from the undoped LiNbO3 crystals, the breakdown field (> 25.0 kV/mm) is higher than the coercive (21.0 kV/mm) measured in LiNbO3:Ru:Fe, which proves a possible new technique to realize domain-inversion by constant electric field rather than pulsed one. (c) 2005 American Institute of Physics.
Resumo:
Hard coatings on relatively soft substrate always face the danger of debonding along the interface. Interfacial stresses are considered to be the initial driving force for the interfacial debonding of the relatively strong bonded coatings. Interfacial stresses due to the mismatch of strain between the coating and substrate are simulated with FEM firstly. The distribution of the interfacial stresses is achieved, which confirms an excessive stresses concentration near the interface end. Subsequently, the redistribution of interfacial stresses is calculated for a coating with periodic segmentation cracks. Results indicate that the distribution of interfacial stresses is altered greatly with the periodic segmentation cracks. To reveal the effect of the spacing of the periodic segmentation cracks on the distribution of interfacial stresses, different crack density is modeled within the coating. It is found that that the peak values of the interfacial stresses decrease with the increase of crack density, i.e. with reduction of spacing of segmentation cracks.
Resumo:
This paper studies the effect of fissure water pressure in different fractures on the critical angle of landslide by laboratory investigation and numerical simulation in order to understand the mechanisms of fissure water pressure on landslide stability. Laboratory observations show that the effect of fissure water pressure on the critical angle of landslide is little when the distance between water-holding fracture and slope toe is three times greater than the depth of fissure water. These experimental results are also simulated by a three-dimensional face-to-face contact discrete element method. This method has included the fissure water pressure and can accurately calculate the critical angle of jointed slope when fissure water pressure in vertical sliding surface exists. Numerical results are in good agreement with experimental observations. It is revealed that the location of water-holding structural surface is important to landslide stability. The ratio of the distance between water-holding fissure and slope toe to the depth of fissure water is a key parameter to justify the effect of fissure water pressure on the critical angle of landslide.
Resumo:
Three-dimensional discrete element face-to-face contact model with fissure water pressure is established in this paper and the model is used to simulate three-stage process of landslide under fissure water pressure in the opencast mine, according to the actual state of landslide in Panluo iron mine where landslide happened in 1990 and was fathered in 1999. The calculation results show that fissure water pressure on the sliding surface is the main reason causing landslide and the local soft interlayer weakens the stability of slope. If the discrete element method adopts the same assumption as the limit equilibrium method, the results of two methods are in good agreement; while if the assumption is not adopted in the discrete element method, the critical phi numerically calculated is less than the one calculated by use of the limit equilibrium method for the same C. Thus, from an engineering point of view, the result from the discrete element model simulation is safer and has more widely application since the discrete element model takes into account the effect of rock mass structures.
Resumo:
A long-standing controversy exists between molecular dynamics simulations and experiments on the twinning propensity of nanocrystalline (NC) face-centered-cubic metals. For example, three-dimensional molecular dynamics simulations rarely observed twins in NC Ni, whereas experiments readily observed them. Here this discrepancy is resolved by experimental observation of an inverse grain-size effect on twinning. Specifically, decreasing the grain size first promotes twinning in NC Ni and then hinders twinning due to the inverse grain-size effect. Interestingly, no inverse grain-size effect exists on stacking fault formation. These observations are explained by generalized planar fault energies and grain-size effect on partial emissions.
Resumo:
The dynamic evolution of a A system coupled by two strong coherent fields is investigated by taking spontaneously generated coherence (SGC) into account. By numericaly simulation, it is shown that the relative phase of the two coherent fields affects significantly the time scale to the coherent population trapping state. In addition, an analytical expression to the evolution rate which is consistent with the numerical results is given. (c) 2005 Elsevier B.V. All rights reserved.
Lasing without or with inversion in an open four-level system with a phase-fluctuation driving field
Resumo:
The effect of exit rate and the ratio of atomic injection rate on gain behaviour has been investigated, and the effects of phase fluctuation on absorption, dispersion and population difference in an open four-level system have been analysed by using numerical simulation from the steady linear, analytical solution. The variation of the linewidth, Rabi frequency of the driving field, the exit rate or the ratio of atomic injection rate can change the lasing properties in the open system. The presence of finite linewidth due to driving-field phase fluctuation prevents the open four-level atomic system from obtaining a high refractive index along with zero absorption.
Resumo:
We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell-Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.
Resumo:
Electrochromic phenomena accompanying the ferroelectric domain inversion in congruent RuO2-doped z-cut LiNbO3 crystals at room temperature are observed in experiments. During the electric poling process, the electrochromism accompanies the ferroelectric domain inversion simultaneously in the same poled area. The electrochromism is completely reversible when the domain is inverted from the reverse direction. The influences of electric field and annealing conditions on domain inversion and electrochromism are also discussed. We propose the reasonable assumption that charge redistribution within the crystal structure caused by domain inversion is the source for electrochemically oxidation and reduction of Ru ion to produce the electrochromic effect. (c) 2005 Optical Society of America.
Resumo:
The application of digital holographic interferometry on the quantitative measurement of the domain inversion in a RuO2: LiNbO3 crystal wafer is presented. The recorded holograms are reconstructed by the angular spectrum method. From the reconstructed phase distribution we can clearly observe the boundary between the inverted and un-inverted domain regions. Comparisons with the results reconstructed by use of the Fresnel transform method are given. Factors that influence the measurement include the spectrum filter size and the spectrum movement are discussed. The spectrum filter size has an effect on the measurement of the details. Although the spectrum movement affects every single reconstructed image, it has no influence on the final measurement.
Resumo:
Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.