36 resultados para eumenine mastoparan AF

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Heat and mass transfer of a porous permeable wall in a high temperature gas dynamical flow is considered. Numerical simulation is conducted on the ground of the conjugate mathematical model which includes filtration and heat transfer equations in a porous body and boundary layer equations on its surface. Such an approach enables one to take into account complex interaction between heat and mass transfer in the gasdynamical flow and in the structure subjected to this flow. The main attention is given to the impact of the intraporous heat transfer intensity on the transpiration cooling efficiency.

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与常规合金相比,形状记忆合金具有形状记忆效应(S ME)和超弹性(SE)等特性。利用这些特性,形状记忆合金被广泛地应用在MEMS中,微机器人领域及医疗器械等方面。为了充分发挥材料性能和优化设计以形状记忆合金为材料制成的MEMS器件及医疗器械,十分需要深入地研究并掌握形状记忆合金微尺度下的相变过程及变形行为。形状记忆合金的形状记忆效应和超弹性等特性都与马氏体相变有着十分密切的关系。本文对CuAINi单晶形状记忆合金中温度变化形成的热变马氏体和应力诱发的形变马氏体进行了观察并研究了其室温下和升温过程中的微尺度力学行为。同时还研究了NITi纳米多晶形状记忆合金体材料和NITi形状记忆合金薄膜室温下压痕尺寸效应。研究内容包括以下几个方面:1)自行设计出能够配合纳米硬度仪、AFM及光学显微镜使用的微型拉伸装置,实现应力诱发马氏体相变的观测及研究;2)使用光学显微镜和AFM对热变马氏体和形变马氏体进行观察,并用摄像机记录了光学显微镜下观察到的应力诱发马氏体相变的全过程;3)使用带有加热台的纳米压痕仪研究了室温下及高温下形状记忆合金独特的纳米压痕行为,包括室温下形状记忆合金的纳米压痕尺寸效应及微分硬度分布情况和升温后形状记忆合金在不同温度下纳米压痕的恢复情况及纳米硬度随温度的变化情况。本研究工作得到的结果如下:1)CuAINi单晶形状记忆合金压痕实验中,由于压头尖端的应力水平很高,不仅会在奥氏体中产生应力诱发马氏体相变,在马氏体中产生应力诱发马氏体重取向,而且在奥氏体和马氏体中还会产生位错引起的塑性变形。位错将对压痕形状的恢复起阻碍作用,当温度高于Af点时,奥氏体和马氏体中的压痕仍不能完全恢复。2)当所施加的压痕载荷较小(≤1000ON)时,CuAINi单晶形状记忆合金中的非弹性变形以相变引起的变形为主,并将对高温下材料的变形产生主要的影响。100℃时奥氏体中压痕在深度方向上的恢复率(60)在0.7~0.8之间,马氏体中孙大约为0.9;纳米硬度随温度升高而明显增加。3)CuAINi单晶形状记忆合金中奥氏体和马氏体中均存在压痕尺寸效应,随压头压入深度减小,纳米硬度均升高。NITi纳米多晶形状记忆合金体材料和NITi形状记忆合金薄膜中也存在压痕尺寸效应。4)CuAINi单晶形状记忆合金中奥氏体的加载曲线的斜率大于马氏体的加载曲线的斜率,而奥氏体和马氏体的卸载曲线则几乎平行。使用尖锐的棱锥压头,用纳米压痕法不能得到纯粹的奥氏体的纳米硬度和模量。

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A method of computing the ambiguity function (AF) for a circularly symmetric pupil function is presented. The AFs of a clear aperture and two shaded apertures are considered in detail and an explicit expression for the first of these AFs is given. We explain these results in the context of the well-known optical transfer function theory and show a primary application of these computations. A good analytic approximation is also introduced, providing an alternative method for calculating the AF, in a simpler way.

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本论文由三部分内容组成,一、药用青蒿的遗传转化,即根癌农杆菌和发 根农杆菌介导的转化系统的建立及其影响参数的研究。二、青蒿素生物合成的 分子调控。三、倍半萜生物合成相关基因的克隆。 一、药用青蒿的遗传转化。建立了Ri质粒介导和Ti质粒介导的两种转基因系统, 其中Ri质粒介导青蒿转基因系统的建立是国际上首次报道;以GFP基因为报 告基因,首次获得高效表达的青蒿转绿色荧光蛋白基因的丛生芽,并对GFP基 因的表达进行了组织和细胞水平的定位。此外,对影响两种转基因系统的主要 参数进行了较为详细的研究。上述研究为青蒿素生物合成的分子调控奠定了坚 实的基础。 二、青蒿素生物合成的分子调控。为探索提高青蒿植株或组织和器官中的青蒿 素含量,首次以棉花中克隆的杜松烯合成酶和法呢基焦磷酸合成酶的 cDNA 为 目的基因导入青蒿,对青蒿中青蒿素的生物合成进行了分子调控研究的尝试。 通过已建立的两种转基因系统,将从棉花中克隆的杜松烯合成酶和法呢基焦磷 酸合成酶的 cDNA 导入青蒿,获得转基因发根和转基因植株。结果表明,外源 基因的表达能够影响青蒿素的生物合成,其中法呢基焦磷酸合成酶基因的过量 表达能够促进青蒿素的生物合成,提高转基因发根和植株中的青蒿素的含量。 转基因发根F-26系中青蒿素含量最高达3.01 mg/g.DW,与对照相比青蒿素含量 提高3~4倍;转基因植株的青蒿素含量最高达10.08 mg/g.DW,与对照相比, 转基因植株的青蒿素产物提高2~3倍。此外,研究还表明,在转基因的发根C -37株系中,外源杜松烯合成酶基因的导入和表达可能相应地促进青蒿转基因 发根自身的法昵基焦磷酸基因的表达。 三、倍半萜生物合成相关基因的克隆。采用 RT-PCR 技术,从马铃薯 (Solanum tuberosum L.) 幼叶中克隆了 HMGRII 亚基因家族的一个新的成员 HMGR-c2(GenBank accession No.AF 096838Southem);杂交分析表明,该基因至少以 两个拷贝以上形式存在于马铃薯基因组中;RT-PCR分析表明,HMGR -c2的 表达在幼苗期无组织特异性,广泛地存在于根、茎、叶等组织中。以青蒿001 株系的苗期叶片为材料,构建了青蒿苗期的λgtll cDNA文库,以PCR筛库方 法从青蒿中克隆一个法呢基焦磷酸合成酶cDNA (Artfps2 GenBank accession No. AF136602)和一个HMGR cDNA(GenBank accession No.AF142473);以青蒿 025株系的苗期叶片为材料,构建了青蒿苗期部分质粒文库以 PCR 筛库方法从 青蒿中克隆一个法昵基焦磷酸合成酶 cDNA (Artfpsl GenBank accession No.AF112881);此外,还从青蒿中克隆了倍半萜合成酶的 cDNA 片段(GenBank accession No.AF156854)。其中青蒿倍半萜合成酶基因的克隆是目前国际上本研 究领域最受关注的焦点和难点之一。至此,本研究已将与青蒿素生物合成相关 的三个重要的关键酶基因基本克隆,这无疑将加速青蒿素生物合成的基础和应 用研究的进程。

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土壤氮素矿化是陆地生态系统氮素转化的重要组成部分。不同的土地利用(管理)方式会改变土壤氮素转化过程,影响土壤肥力的保持,进而可能造成土壤内氮素渗漏流失。为系统了解内蒙古农牧交错区土壤氮素转化的特点,本实验采用原位培养顶盖埋管法进行野外培养,每间隔一个月定期取样,于2004年7月-2006年10月在植物所恢复生态学实验站进行了两个试验,1:选择农牧交错区四种有代表性的土地类型(围封样地:FS,放牧样地:GS,弃耕地:AF,和农田:CF),比较土地利用方式之间氮素矿化的异同;2:在施肥样地通过不同施肥处理(F0: 1g N m-2, F1: 1g N m-2, F2: 2g N m-2, F3: 4g N m-2, F4: 8g N m-2, F5: 16g N m-2, F6: 32g N m-2, F7: 64g N m-2) 的土壤氮素转化动态,确定过度放牧的典型草原围封禁牧后,植被恢复过程中最适宜的施肥量。主要结论如下: 1. 与试验初期相比,整个非生长季围封样地、弃耕地和农田的铵态氮和无机氮含量逐渐降低,培养结束时铵态氮含量分别减少了67.04%,77.31%和70.54%,而放牧地的含量增加1.63%。围封样地、放牧地、弃耕地和农田的硝态氮含量分别增加了61.61%,376.43%,199.75%和133.16%。非生长季四种土地类型的土壤氮素转化速率主要受温度影响。围封样地、放牧地、弃耕地和农田非生长季矿化速率均值分别为-0.016,0.0429,-0.0051和-0.0030 μg g-1 d-1。硝化速率均值变幅为-0.43-0.17 μg g-1d-1。 2. 与没有冷冻而融化的土壤相比,冻融显著影响土壤无机氮含量的变化。只有在较低的土壤温度条件下冷冻以后,融化才会促进土壤氮素矿化。不同的冷冻时间长度下融化均会促进土壤硝化速率。土壤温度、土壤含水量变化是影响氮素转化速率的重要因子。 3. 四种土地类型的年日均矿化速率为放牧样地>农田>弃耕地>围封样地,分别为0.25,0.11,0.10,0.06μg g-1d-1,其年平均速率分别为11.65,5.50,5.00和2.46g m-2 y-1,而年日平均硝化速率分别为0.27,0.095,0.097和0.05μg g-1d-1。其中生长季日均矿化速率和日均硝化速率均为其年日均速率的两倍。因此,生长季形成的矿化氮是全年的93%,而形成的硝态氮占全年的86%。四种土地类型年均矿化氮的累积量平均为615.04 kg ha-1,而硝化作用的累积量变幅为230.44-1218.86 kg ha-1。四种土地类型的矿化速率和硝化速率的季节动态变化与气候因子的变化一致。 4. 不同施肥处理对典型草原土壤氮素转化均有显著影响。与对照相比,少量施肥(F1,F2)土壤铵态氮,硝态氮和无机氮含量分别减少20.57%,11.18%和17.18%。当施肥量大于F4(8g N m-2)时,随施肥量增加土壤铵态氮,硝态氮和无机氮含量增加18%-1191%。除F5(16g N m-2)外,与对照相比,随施肥量增加,土壤矿化速率增加了5-21倍。4 g N m-2 (F3)左右是典型草原生态系统比较合适的施肥量。 5. 氨气挥发速率的季节动态特征与气象因子的变化一致,其速率变幅为17.65 - 1228.39µg m-2 d-1,其中7月挥发量占全年的37%。与对照相比,少量施肥氨气挥发速率降低了1-2%,施肥量大于F3 (4g N m-2),速率增加了1-4倍。实验期间总的流失量变幅为23.76-84.91mg m-2,而且通过氨气挥发流失量低于土壤全氮的3%。氨气挥发不是典型草原过量氮素流失的主要方式。 6. 氮素限制的典型草原,植被恢复过程中外源氮素添加阈值为:4 g N m-2 (F3)。与对照相比,短期施肥(3年)不会显著影响根系碳储量和土壤碳氮储量。施肥处理的土壤硝态氮和无机氮含量显著增加,说明施肥显著刺激硝化作用。典型草原60%植物根系主要分布在地下0-10cm,这里的碳储量占地下储量(0-50cm)的63%以上。随土壤深度增加,土壤全氮,全碳,无机氮储量降低。而铵态氮储量和可利用的无机氮含量随土壤深度增加,说明植物根系主要吸收利用上层可利用氮素,而且下层氮素矿化速率降低。

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 目的 观察单核细胞、NK细胞和T 细胞在猪2猕猴延迟性异种移植排斥反应(DXR) 中的作用。方法 建立湖北白猪2云南猕猴的腹腔异位心脏移植模型,实验分为2 组:对照组( n = 5) ,不使用中华眼睛蛇毒因( Y2CVF) ;实验组( n = 4) 应用Y2CVF 完全清除受者体内补体。2 组受 体猴均采用环孢素A(CsA) ,环磷酰胺(CTX) 和甲基强的松龙(MP) 三联免疫抑制治疗。免疫组织 化学方法检测移植心组织中细胞间黏附分子( ICAM)21 、肿瘤坏死因子( TNF)2α、单核细胞、NK 细 胞和T 细胞的表达。结果 对照组3 个移植心在15~60 min 内发生超急性排斥反应(HAR) ,另2 个分别存活22 h 及6 d ,移植心均未见明显的炎性细胞浸润及ICAM21 和TNF2α的表达。实验组 移植心存活时间分别为8 、10 、13 和13 d ,移植物浸润细胞中可见大量的单核细胞(50 %) ,少量的 NK细胞(8 %~10 %) ,CD4 + T 细胞(15 %) 和CD8 + T 细胞(25 %) 。移植物血管内皮细胞表面出现 ICAM21 的表达上调,移植物间质中出现TNF2α的表达增加。结论 单核细胞、NK细胞和T 细胞 介导的移植物损伤,在应用Y2CVF 处理的猪2猕猴DXR 发生中发挥重要作用 

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 观察猪到猕猴异种心脏移植超急性排斥反应时的免疫学及病理学变化。方法  采用猪到猕猴腹腔内异位心脏移植模型,检测发生超急性排斥反应者的血液中补体、天然抗体及T 淋巴细胞亚群的变化,并对移植心脏进行免疫组化(测定C3 、C4 、C5b29 、IgG及IgM 的沉积) 及病理学 分析。结果 发生超急性排斥反应时,血清补体C3 、C4 的含量、总补体活性及抗猪内皮细胞天然抗 体均有一定程度的下降;CD4 + / CD8 + T 淋巴细胞的比率也有所下降;移植心脏中均有补体C3 、C4 、 C5b29 的沉积, IgG及IgM 也均有沉积,但IgG和IgM 沉积强度的差异无统计学意义;病理学改变主 要为心肌间质弥漫性出血、水肿,毛细血管内普遍淤血。结论 补体通过经典途径激活参与猪到猕猴 异种心脏移植超急性排斥反应;超急性排斥反应时受者血中天然抗体水平明显下降;CD4 + T 淋巴细 胞可能参与异种移植超急性排斥反应过程并有所消耗;发生超急性排斥反应的移植物突出病理表现 为间质出血。

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Anadromous Coilia ectenes was sampled from the Yangtze estuary at Chongming and two of the primary upstream spawning grounds at Jingjiang and Anqing in April, May, June and August 2006. Gonad development was analyzed for females. In April, fish were collected in the estuary and at Jingjiang, but not at Anqing. No female was mature (gonad at stages IV or V) at either location. In May, 45% of the females were mature in the estuary, 9% at Jingjiang and 5% at Anqing. In June, 86% were mature in the estuary, 83% at Jingjiang and 7% at Anqing. In August, C. ectenes was absent at Jingjiang. No female was mature in the estuary, and all females were mature at Anqing. Absolute fecundity (AF) increased significantly with standard length (SL) by a power function AF = 2.27 x 10(-6) x SL2.67 (r(2) = 0.57, n = 48, P < 0.05). Mature females in the estuary were smaller than those at Jingjiang and Anqing. Conservation of spawners in the upstream spawning grounds is important because they have a size-related fecundity advantage over the smaller spawners in the estuary.

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AIM: To probe into the genetic susceptibility of HLA-DRB1 alleles to esophageal carcinoma in Han Chinese in Hubei Province. METHODS: HLA-DRB1 allele polymorphisms were typed by polymerase chain reaction with sequence-specific primers (PCR-SSP) in 42 unrelated patients with esophageal cancer and 136 unrelated normal control subjects and the associated HLA-DRB1 allele was measured by nucleotide sequence analysis with PCR.SAS software was used in statistics. RESULTS: Allele frequency (AF) of HLA-DRB1*0901 was significantly higher in esophageal carcinoma patients than that in the normal controls (0.2500 vs0.1397, P=0.028, the odds ratio 2.053, etiologic fraction 0.1282). After analyzed the allele nucleotide sequence of HLA-DRB1*0901 which approachs to the corresponded exon 2 sequence of the allele in genebank. There was no association between patients and controls in the rested HLA-DRB1 alleles. CONCLUSION: HLA-DRB1*0901 allele is more common in the patients with esophageal carcinoma than in the healthy controls, which is positively associated with the patients of Hubei Han Chinese. Individuals carrying HLA-DRB1*0901 may be susceptible to esophageal carcinoma.

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The thermodynamic properties of the spin-1/2 diamond quantum Heisenberg chain model have been investigated by means of the transfer matrix renormalization group (TMRG) method. Considering different crystal structures, by changing the interactions among different spins and the external magnetic fields, we first investigate the magnetic susceptibility, magnetization, and specific heat of the distorted diamond chain as a model of ferrimagnetic spin systems. The susceptibility and the specific heat show different features for different ferromagnetic (F) and antiferromagnetic (AF) interactions and different magnetic fields. A 1/3 magnetization plateau is observed at low temperature in a magnetization curve. Then, we discuss the theoretical mechanism of the double-peak structure of the magnetic susceptibility and the three-peak structure of the specific heat of the compound Cu-3(CO3)(2)(OH)(2), on which an elegant measurement was performed by Kikuchi [Phys. Rev. Lett. 94, 227201 (2005)]. Our computed results are consistent with the main characteristics of the experimental data. Meanwhile, we find that the double-peak structure of susceptibility can be found in several different kinds of spin interactions in the diamond chain. Moreover, a three-peak behavior is observed in the TMRG results of magnetic susceptibility. In addition, we perform calculations relevant for some experiments and explain the characteristics of these materials. (c) 2007 American Institute of Physics.

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药物分子与生物分子的相互作用是分子水平上研究药物构效关系及药物筛选的基础。测定形成的非共价复合物及其稳定性是研究药物与靶分子相互作用的关键。单链和双链DAN与小分子的相互作用提供了包括抗癌、抗病毒及抗菌在内的大量治疗药物的作用机理。本论文选择合成了与SARS病毒和肿瘤相关的寡聚核昔酸靶分子,利用质谱高灵敏、专一性、快速、化学计量的特点,研究靶分子与临床上确有疗效的抗病毒、抗肿瘤中药中几大类化学成分的相互作用,探讨它们相互作用的规律,通过相互作用强度的比较,考察这些中药化学成分在抗病毒、抗肿瘤方面的可能活性。在单链寡聚核营酸靶分子(RNA,DNA)与皂昔类化合物的相互作用的研究中,首先建立了区分皂普类异构体的高分辨电喷雾质谱及多级串联质谱的分析方法,通过皂普准分子离子在CID谱中产生的碎片离子,可以提供皂昔昔元、糖基类型、糖链的连接位点,为类似化合物的异构体的区分提供了一个简捷、灵敏、准确的分析方法。考察了实验条件对单链寡聚核营酸靶分子(RNA,DNA)与中药化学成分相互作用的影响;在皂营、黄酮类化合物与单链寡聚核昔酸靶分子的作用研究中,发现非共价作用强度的大小与普元、糖链的结构有关,包括昔元的类型、轻基的数目、糖链的长短,以及糖链上甲基取代的位置。单链寡聚核普酸靶分子与生物碱的相互作用研究表明,相互作用亲和力的大小与生物碱的碱性强弱有关,季胺型生物碱的作用最强,如巴马汀、药根碱、小巢碱与靶分子均生成了较强的非共价复合物。与昔类、内酩、酚类等成分的相互作用同样与其结构密切相关。双链DNA与生物碱类化合物的相互作用研究发现,它们与生物碱的作用强度与双链DNA的AF碱基对富有或GC-碱基对富有有关,且复合物离子的CID断裂途径不同。生物碱化合物的结构不同,其作用强度存在较大差异。述研究结果建立了核昔酸与中药化学成分相互作用研究的软电离质谱方法,利用该方法的研究结果,可以为中药活性成分的初步筛选提供一条可以借鉴的途径。

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蛇毒和蜂毒是提供药理学活性分子的丰富来源,它们富含肽和蛋白,包括一 些酶类和毒素。 丝氨酸蛋白酶抑制剂广泛存在于动物、植物和微生物体内,参与许多重要的 生理过程,如血液凝集、纤维蛋白溶解、细胞凋亡、发育以及炎症反应和补体活 化等(van Gent D. et al., 2003)。通过凝胶过滤、离子交换和反向高压液相色谱, 我们从金环蛇毒液中纯化得到一种天然的丝氨酸蛋白酶抑制剂,命名为 bungaruskunin。并且从该蛇的毒腺cDNA 文库中克隆到了它的核苷酸序列。 bungaruskunin 预测的前体由83 个氨基酸组成,包括含有24 个氨基酸的信号肽 和含有59 个氨基酸的成熟肽。它与一种由红腹伊澳蛇(Pseudechis porphyriacus) 的cDNA 预测到的丝氨酸蛋白酶抑制剂blackelin 具有最大相似性,达64%。 Bungaruskunin 是一种Kunitz 型的蛋白酶抑制剂,具有一个保守的Kunitz 结构域, 能够抑制胰蛋白酶、胰凝乳蛋白酶和弹性蛋白酶。通过对金环蛇毒腺cDNA 文库 的筛选,我们还得到了另外两条β-bungarotoxin B 链,Bungaruskunin 的整体结 构与β-bungarotoxin B 链相似,特别是它们都具有高度保守的信号肽序列。这些 发现强烈地表明蛇毒Kunitz/BPTI 蛋白酶抑制剂与神经毒性的类似物可能起源于 共同的祖先。 肥大细胞脱粒肽是从膜翅目昆虫的毒液中鉴别出的一个小肽家族,是一种具 有潜在的药物治疗作用的诱导活性分子(Xueqing Xu et al., 2006)。来源于蜂类的 缓激肽样的类似物vespakinin 家族是一种具有调节和激素功能的活性成分,与哺 乳动物和两栖动物的缓激肽类似(Nakajima T., 1984)。本研究对三种胡蜂的 毒液进行了一系列的活性检测,发现黑尾胡蜂的蜂毒对白色念珠菌Candida albicans 和金黄色葡萄球菌 Staphylococcus aureus 有抑制作用。凹纹胡蜂和黑尾 胡蜂的蜂毒具有微弱的磷酯酶A2 活性。通过凝胶过滤和反向高压液相色谱,没 有得到相关的活性组分。通过对三种胡蜂毒腺cDNA 文库的筛选,我们得到了2 条来源于黑尾胡蜂的核苷酸序列,Blast 分析表明,其中一条编码类似肥大细胞 脱粒肽,但未克隆到全长,序列比对结果显示其与来源于大胡蜂(Vespa magnifica) 的Mastoparan-like peptide 12c precursor(GenBank accession A0SPI0)的核苷酸序 列相似性达98%(Xueqing Xu et al., 2006);另一条编码缓激肽类似物,命名为 Hw-bradykinin,序列比对结果显示其与来源于大胡蜂(Vespa magnifica)的 vespakinin-M precursor(GenBank accessionABG75944)的核苷酸相似率达96% (Zouhong Zhou et al., 2006)。

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Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

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Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

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The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.