On a novel method of impact by a front-end-coated bullet to evaluate the interface adhesion between film and substrate

A preliminary experiment was carried out to validate the feasibility of the method of impact by a front-end-coated bullet to evaluate the interface adhesion between film and substrate. The theoretical description of the initiation, propagation and evolution of the stress pulse during impact was generalized and formulized. The effects of the crucial parameters on the interface stress were further investigated with FEM. The results found the promising prospect of the application of such a method and provided useful guidance for experimental design.

Is the genus Digramma synonymous to the genus Ligula (Cestoda : Pseudophyllidea)? Evidence from ITS and 5 ' end 28S rDNA sequences

The genus Digramma (Cestoda: Pseudophyllidea) described by Cholodkovsky in 1915 differs from the genus Ligula only by the number of the reproductive organs per proglottis. However, the occurrence of transitional forms in Digramma raises much confusion concerning its generic validity. In the present study, cestodes previously designated as Digramma and Ligula were collected from lakes in the lower and middle reaches of the Yangtze River, and also from Qinghai Lake on Qingzang plateau, China. The entire internal transcribed spacer of the ribosomal DNA (ITS rDNA) and 5' end of 28S rDNA were compared between the Digramma and Ligula specimens. The low level of nucleotide variation between the two genera may imply that cestodes in the genus Digramma are paraphyletic to the Ligula genus, and Digramma is a synonym of Ligula. However, whether previously identified Digramma cestodes represent different species in the genus Ligula requires further investigation.

cryptanalysis of the end-to-end security protocol for mobile communications with end-user identification/authentication

IEEE Computer Society

Stress-distribution at the rigid circular-arc inclusion end

The elastic plane problem of a rigid co-circular arc inclusion under arbitrary loads is dealt with. Applying Schwarz's reflection principle integrated with the analysis of the singularity of complex stress functions, the general solution of the problem is found and several closed-form solutions to some problems of practical importance are given. Finally, the stress distribution at the arc inclusion end is examined and a comparison is made with that of the rigid line inclusion end to show the effect of curvature.

Near-diffraction-limited, 35.4 W laser-diode end-pumped Nd:YVO4 slab laser operating at 1342 nm

A diode stack end-pumped Nd:YVO4 slab laser at 1342 nm with near-diffraction-limited beam quality by using a hybrid resonator was presented. At a pump power of 139.5 W, laser power of 35.4 W was obtained with a conversion efficiency of 25.4% of the laser diode to laser output. The beam quality M-2 factors were measured to be 1.2 in the unstable direction and 1.3 in the stable direction at the output power of 29 W. (C) 2009 Optical Society of America

Comparison of Yb-doped fiber laser with one-end and double-end pumping configuration

A high-power Ytterbium-doped fiber laser (YDFL) with homemade double clad fiber (DCF) is introduced in this paper. The output power characteristics of a linear cavity fiber laser have been studied theoretically by solving the rate equations and experimentally tested with single- and double-end-pumping configurations. When both ends of the fiber are pumped by two high-power laser diodes with a launched power of similar to 300 W each, a maximum CW output of 444 W is obtained with a slope efficiency of similar to 75%. (c) 2006 Elsevier Ltd. All rights reserved.

Room-temperature cw and pulsed operation of a diode-end-pumped Tm:YAP laser

We report the continuous-wave and acousto-optical Q-switched operation of a diode-end-pumped Tm:YAP laser. Continuous-wave output power of 3.5 W at 1.99 mu m was obtained under the absorbed pump power of 14 W. Under Q-switched laser operation, the average output power increased from 1.57 W to 2.0 W, with an absorbed pump power of 12.6 W, as the repetition rate increased from 1 kHz to 10 kHz. The maximum Q-switched pulse energy was 1.57 mJ with a repetition rate of 1 kHz. The minimum pulse width was measured to be about 80 ns, corresponding to a peak power of 19.6 kW.

Judd-Oflet analysis of spectrum and laser performance of Ho:YAP crystal end-pumped by 1.91-mu m Tm:YLF laser

The Ho:YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho:YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Omega(2) = 1.42 x 10(-20) cm(2), Omega(4) = 2.92 x 10(-20) cm(2), and Omega(6) = 1.71 x 10(-20) cm(2), this paper calculated the fluorescence lifetime to be 6 ms for I-5(7) -> I-5(8) transition, and the integrated emission cross section to be 2.24 x 10(-18) cm(2). It investigates the room-temperature Ho:YAP laser end-pumped by a 1.91-mu m Tm:YLF laser. The maximum output power was 4.1 W when the incident 1.91-mu m pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror

We report on a diode- pumped CW passively mode locked ceramic Nd: YAG laser with SESAM ( semiconductor saturable absorber mirror), wavelength 1064nm. At a pump power of 7.6w, the pulse width was estimated to be similar to 8.3ps with repetition rate similar to 130MHz and the average output power was 1.59w. To our knowledge, this was the first demonstration that ceramic Nd: YAG was used for diode pumped CW passively mode locking. (C) 2005 Optical Society of America.

Passive mode locking of diode-end-pumped Nd : GdVO4 laser with an In0.25Ga0.75As output coupler

Passive mode locking of a diode-pumped Nd:GdVO4 laser was demonstrated using In0.25Ga0.75As as saturable absorber as well as output coupler. The pulse width was measured to be about 16 ps with a repetition rate of 146 MHz. The average output power was 120 mW with pump power of 6 W. To our knowledge, this is the first demonstration on a passively mode-locked Nd:GdVO4 laser by using an In0.25Ga0.75As output coupler. (C) 2004 Elsevier B.V. All rights reserved.

Diode-end-pumped passively CW mode-locked Nd : YLF laser by the LT-In0.25Ga0.75As absorber

We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ.

A passively mode-locked diode-end-pumped Nd : YAG laser with a semiconductor saturable absorber mirror grown by metal organic chemical vapour deposition

We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror (SESAM) from which we achieved a 10 ps pulse duration at 150 MHz repetition rate. The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time was measured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.