17 resultados para ddc: 551.02

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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从腾冲热海分离到最高生长温度达80℃的一株嗜热非芽孢菌RH99-02菌株,经鉴定属Thermus属,对其所产类胡萝卜素进行了吸收光谱扫描及薄层层析分析。发酵研究表明振荡培养时的菌体生物量和色素产量上均高于静置培养,培养至50h菌体生物量和色素产量达到最大值,菌体色素产量为762μg/g干重。

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目的了解微囊藻毒素(MC)LR对L-02细胞的毒性机制。方法以L-02细胞为材料,用不同浓度的MCLR处理该细胞,观察了细胞增殖能力、细胞形态改变、乳酸脱氢酶(LDH)泄漏、细胞凋亡率及凋亡相关基因等一系列指标的变化。结果 MTT细胞增殖实验可知,MCLR在24 h内对L-02细胞有轻微的抑制作用,随后却促进细胞增殖。48 h处理对 LDH泄漏没有显著影响,延时处理导致LDH泄漏发生,且MCLR浓度越高,LDH泄漏越严重,此结果显示发生了细胞氧化损伤。光镜下50μg/ml的毒素浓度在60 h处理后可造成明

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从鸭儿湖氧化塘中分离出具有分解对硝基酚能力的细菌Pseudomonas sp.,代号CTP-02。在实验室条件下,细菌培养物降解对硝基酚的速度与时间之间的动力学方程为dc/dt=-K_1t-K_2,细菌降解对硝基酚的最适温度为35℃,最适pH为7.5。CTP-02菌降解对硝基酚过程中首先发生脱硝基作用。

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Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

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于2010-11-23批量导入

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Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.

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当归新品系DGA2000-02是采用重离子束55MeV/u40Ar+15离子辐照甘肃当归90-01干种子,按新品种选育程序多年选育而成的。2005—2007年,在定西市岷县、渭源县、漳县、陇西县等地当归品系区域试验中,甘肃当归DGA2000-02平均产鲜当归10621.5kg/hm2,较对照品种(甘肃当归90-01)平均增产鲜当归1386.0kg/hm2,增产率15.0%。生育期790d,茎秆深紫色,根系黄白色。测定结果:总灰分4.2%,酸不溶性灰分0.4%,分别优于对照品种16%和33.3%;浸出物61.4%,较规定指标提高4.4%;阿魏酸0.148%,较规定指标提高2.96倍。质量显著优于对照品种和2005年版《中国药典》规定指标。适宜在海拔2000—2600m、年降水量500—600mm的二阴及高寒阴湿生态区栽培。

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当归新品系"DGA2000-02"是利用兰州重离子加速器研究装置(HIRFL)对"岷归1号"进行重离子束辐照选育出来的。与岷归1号相比,DGA2000-02表现出更强的抗病性,产量也有较大提高。对这两个品种的表型、品质及遗传差异进行了系统的分析。为将来进一步选育产量高、品质好及抗逆性强的新品种提供研究基础。

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本论文从理论计算到实验结果详细讨论了B02聚束器双管高压锯齿波直接形成装置的研制过程。在3-18MHz的工作频率范围内,锯齿波德峰-峰电压值都达到了期望指标值1100v。而且理论计算结果与实验结果具有非常好的一致性。 前级脉冲放大器的设计与制作在本论文中也有详细讨论。对于实验中用到的各种附属设备在本文中也有所提及。

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The blue long-lasting phosphorescence (LLP) phenomenon was observed for Eu2+-doped SrO-B2O3 glasses prepared in the reducing atmosphere. The phosphorescence peaks at about 450 nm due to the 4f5d -> 4f transition of Eu2+. With the doping of different amounts of Eu2+, the concentration-quenching phenomenon was observed for both the LLP and photoluminescence of the glasses, and the critical concentration for the two cases was same, i.e., 0.02 mol% Eu2+. And by the investigation of the TL curves, the content of Eu2+ had an effect on the trap depth of the samples. At last the possible mechanism of the LLP of the samples was suggested.

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A novel layered compound, [Ni(C10H8N2)(2)V3O8.5], was hydrothermally synthesized and structurally characterized by single crystal X-ray diffraction. The compound crystallizes in monoclinic system, space group P21/c with a = 1.551 8(3) nm, b = 1.476 1(3) nm, c = 1.048 3(2) nm, beta = 92.02(3), V = 2.399 8(8) nm(3), Z = 4, R = 0. 046 7, wR(2) = 0. 085 9.

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本文介绍了“CR- 0 2”AUV的主要性能和技术指标 ,详细介绍了“CR- 0 2”AUV在湖试定点调查中的应用 ,为进一步的海试提供了试验数据和理论依据 .