Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45 meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5 GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.

Structure evolution along the yrast-line in Pd-101

High-spin states in Pd-101 have been investigated experimentally via the Ge-76(Si-28, 3n gamma)Pd-101 reaction. The previously known bands based on the d(5/2) and h(11/2) neutron orbitals have been extended to higher-spin states, and two new structures have been observed. Spin and parity were assigned to the levels on the basis of the experimental results of the angular distribution of gamma rays deexciting the oriented states. For the ground-state band, the E-GOS (E-Gamma Over Spin) curve strongly suggests a structure transition from vibration to rotation while increasing spin.

Preparation of SnO2 thin films with extremely preferred orientation along (101) plane by LB deposition technique

SnO2 thin films with extremely preferred orientation along (101) plane were made by LB technique and characterized by FTIR,, UV-visible, X-ray diffraction, X-ray photoelectron spectroscopy and SEM.