PHYSICAL VAPOR TRANSPORT AND CRYSTAL-GROWTH OF GESEXTE1-X SOLID-SOLUTIONS

Physical vapor transport studies of GeSe(x)Te1 - x (x = 0.1, 0.2, 0.3, and 0.4) solid solutions demonstrated, that individual, large single crystals of these materials can be grown in closed ampoules. A compositional analysis of the grown crystals revealed, that the mass transport (crystal growth) process under steady-state conditions is pseudo-congruent and controlled by diffusion processes in the source material. From these experiments, the degree of non-stoichiometry (Ge-vacancy concentrations) of GeSe(x)Te1 - x single crystals could be estimated. The effects of the cubic to rhombohedral phase transformation during cooling on the microstructure and morphology of the grown mixed crystals are observed. This work provides the basis for subsequent defect studies and electrical measurements on these crystals.

The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis

We have investigated the growth of AlGaN epilayers on a sapphire substrate by metalorganic chemical vapour deposition using various low-temperature ( LT) AlN buffer thicknesses. Combined scanning electron microscopy and cathodoluminescence investigations reveal the correlation between the surface morphology and optical properties of AlGaN films in a microscopic scale. It is found that the suitable thickness of the LT AlN buffer for high quality AlGaN growth is around 20 nm. The Al compositional inhomogeneity of the AlGaN epilayer is attributed to the low lateral mobility of Al adatoms on the growing surface.

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells

Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.

Compositional dependence of the microphase separation transition in styrene-butadiene-styrene triblock copolymer/polystyrene blends

The change in the microphase separation transition (MST) temperature of a styrene-butadiene-styrene (SBS) triblock copolymer induced by the addition of polystyrene (PS) was investigated by small-angle X-ray scattering. It was found that the transition temperature was determined from the molecular weight (M(H)) Of the added PS in relation to that of the corresponding blocks (M(A)) in the copolymer. The MST temperature decreased with added PS if M(H)/M(A) < 1/4, while it increased with added PS when M(H)/M(A) > 1/4 Analysis of the theoretical expression based on the random phase approximation showed exactly the same tendency of change in the transition temperatures as that observed experimentally. The interaction parameter, chi(SB), obtained by nonlinear fitting of the scattering profiles of SBS/PS blends in the disordered state, was found to be a function of temperature and composition. Composition fluctuations were found to exist in SBS/PS blends, increasing with increasing addition of PS but diminishing with increasing molecular weight of the added PS.