A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) was designed and fabricated with standard 0.6 mu m CMOS technology. This OEIC circuit consisted of an integrated double photodiode detector (DPD) and a preamplifier. The DPD detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. The preamplifier exploited the regulated cascode (RGC) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. Testing results showed that the bandwidth of OEIC was 700MHz, indicating the bit rate of 1Gb/s was achieved.

A CMOS front-end circuit for SONET OC-96 receiver

An optical receiver front-end for SONET OC-96 receivers was analyzed and designed in 0.18 mu m CMOS process. It consists of a transimpedance amplifier (TIA) and a limiting amplifier (LA). The TIA takes a fully differential configuration, and regulated cascode (RGC) input stage is implemented. The LA was realized by five cascaded identical gain stages with active inductor load. The TIA achieved 4.2GHz bandwidth for 0.5pF photodiode (PD) capacitance and 1.2k 0 transimpedance gain. The LA achieved 5.4GHz bandwidth and 29dB voltage gain. The optical sensitivity is -19dBm at 5-Gb/s for a bit-error rate of 10(-12), and it dissipates 45.5mW for I.8V supply.

一种红外探测器专用77K工作CMOS前置放大器

利用single endedfolded cascode结构和MOS管工作在线性区做反馈电阻,实现了一种在77K工作的高性能低功耗、低噪声前置放大器.分析了它的噪声特性,提出了减少噪声的措施.此前置放大器用1.2μm的标准CMOS工艺制造完成.经过测试,这种前置放大器在低温77K下能正常工作,反馈电阻大小为兆欧级,线性度达到了1%,等效输入噪声电流仅0.03pA/Hz,功耗小于1mW.