A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure

Semiconductor optical amplifiers (SOAs) with n-type modulation-doped multiple quantum well structure have been investigated. The shortened carrier lifetime is derived from the PL spectrum and electrical modulation frequency response measurement. The carrier lifetime in semiconductor optical amplifiers with any n-type-2-modulated doping multiple quantum well structure is less than 60% of that in the undoped partner. The shortest measured carrier lifetime of 236 ps in the MD-MQW SOA with sheet carrier density of 3 x 10(12) cm(-2) was only 38% of that in the undoped MQW SOA, which can increase the wavelength conversion efficiency via four wave mixing by a factor of about 7 and switching speed via XGM and XPM applications by a factor of 2.63.

Effective recombination velocity of textured surfaces

Surface texturization is an effective way to enhance the absorption of light for optoelectronic devices but it also aggravates the surface recombination by enlarging the surface area. In order to evaluate the influence of texture structures on the surface recombination, an effective surface recombination velocity is defined which is assumed to have an equivalent recombination effect on a flat surface. Based on numerical and analytical calculation, the dependences of effective surface recombination on the pattern geometry, the surface recombination velocity, and the diffusion length are analyzed.

Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure

We report experimental results of the effect of Ka-band microwave on the spin dynamics of electrons in a two-dimensional electron system (2DES) in a GaAs/Al0.35Ga0.65As heterostructure via time-resolved Kerr rotation measurements. While the microwave reduces the transverse spin lifetime of electrons in the bulk GaAs, it significantly increases that in the 2DES, from 745 to 1213 ps, when its frequency is close to the Zeeman splitting of the electrons in the magnetic field. Such a microwave-enhanced spin lifetime is ascribed to the microwave-induced electron scattering which leads to a "motional narrowing" of spins via D'yakonov-Perel' mechanism.

Effects of waveguide length and pump power on the efficiency of wavelength conversion in silicon nanowire waveguides

We point out the use of a wrong definition for conversion efficiency in the literature and analyze the effects of the waveguide length and pump power on conversion efficiency according to the correct definition. The existence of the locally optimal waveguide length and pump power is demonstrated theoretically and experimentally. Further analysis shows that the extremum of conversion efficiency can be achieved by global optimization of the waveguide length and pump power simultaneously, which is limited by just the linear propagation loss and the effective carrier lifetime. (C) 2009 Optical Society of America

Influence of (001) vicinal GaAs substrates on the optical properties of defects in low-temperature grown GaAs/AlGaAs multiple quantum wells

Photoluminescence (PL) spectroscopy and carrier lifetime measurement has been used to characterize optical properties of defects in the low-temperature (LT) grown GaAs/AlGaAs multiple quantum well structures. Two sets of samples were grown at 400 degrees C by molecular beam epitaxy on nominal (001) and miscut [4 degrees off (001) towards (111) A] GaAs substrates, respectively. After growth, samples were subjected to 30 s rapid thermal annealing at 600-800 degrees C. It is found that after annealing, two defect-related PL features appear in the samples grown on nominal (001) GaAs substrates, but not in those grown on miscut (001) GaAs substrates. The carrier lifetimes are about 31 and 5 ps in as-grown samples grown on nominal and miscut (001) GaAs substrates, respectively. The different PL spectra and carrier lifetimes in two sets of samples are attributed to different structures of the As-Ga-like defects formed during LT growth. (C) 1999 American Institute of Physics. [S0003-6951(99)00230-2].

Comparative study of the surface passivation on crystalline silicon by silicon thin films with different structures

Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu PCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (mu c-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si-H bonds are more preferred than those in the form of Si-H-2 bonds to passivate the crystalline Si surface. (C) 2009 Elsevier B.V. All rights reserved.

Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs

A semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (＜0. 7dB),fiber-to-fiber lossless operation current (70～90mA) and a high extinction ratio (＞50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm)and the whole L band (1570～ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.

Carrier spin relaxation in (Ga, Mn) As at room temperature

In this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (Ga, Mn) As samples using femtosecond time-resolved pump-probe Kerr spectroscopy. It is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed ( Ga, Mn) As has shorter carrier recombination and electron spin relaxation lifetimes as well as larger Kerr rotation angle than the as-grown ( Ga. Mn) As under the same excitation condition. which shows that DP mechanism is dominant in the spin relaxation process for ( Ga, Mn)As at room temperature. The enhanced ultrafast Kerr effect in the annealed (Ga,Mn)As shows the potential application of the annealed ( Ga, Mn) As in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (Ga, Mn) As.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Impact of carrier stiffness and microtopology on two-dimensional kinetics of P-selectin and P-selectin glycoprotein ligand-1 (PSGL-1) interactions

Mechanics and surface microtopology of the molecular carrier influence cell adhesion, but the mechanisms underlying these effects are not well understood. We used a micropipette adhesion frequency assay to quantify how the carrier stiffness and microtopology affected two-dimensional kinetics of interacting adhesion molecules on two apposing surfaces. Interactions of P-selectin with P-selectin glycoprotein ligand-1 (PSGL-1) were used to demonstrate such effects by presenting the molecules on three carrier systems: human red blood cells (RBCs), human promyelocytic leukemia HL-60 cells, and polystyrene beads. Stiffening the carrier alone or in cooperation with roughing the surface lowered the two-dimensional affinity of interacting molecules by reducing the forward rate but not the reverse rate, whereas softening the carrier and roughing the surface had opposing effects in affecting two-dimensional kinetics. In contrast, the soluble antibody bound with similar three-dimensional affinity to surface-anchored P-selectin or PSGL-1 constructs regardless of carrier stiffness and microtopology. These results demonstrate that the carrier stiffness and microtopology of a receptor influences its rate of encountering and binding a surface ligand but does not subsequently affect the stability of binding. This provides new insights into understanding the rolling and tethering mechanism of leukocytes onto endothelium in both physiological and pathological processes.

Possibility of lifetime measurement in a flowing medium with phase fluorometry

The possibility of lifetime measurement in a flowing medium with phase fluorometry is investigated theoretically. A 3-D time dependent partial differential equation of the number density of atoms (or molecules) in the upper level of the fluorescence transition is solved analytically, taking flow, diffusion, optical excitation, decay, Doppler shift, and thickness of the excitation light sheet into account. An analytical expression of the intensity of the fluorescence signal in the flowing medium is deduced. Conditions are given, in which the principle of lifetime measurement with phase fluorometry in the static sample cell can be used in a flowing medium.

Surface-Bound Selectin-Ligand Binding Is Regulated By Carrier Diffusion

Two-dimensional (2D) kinetics of receptor-ligand interactions governs cell adhesion in many biological processes. While the dissociation kinetics of receptor-ligand bond is extensively investigated, the association kinetics has much less been quantified. Recently receptor-ligand interactions between two surfaces were investigated using a thermal fluctuation assay upon biomembrane force probe technique (Chen et al. in Biophys J 94:694-701, 2008). The regulating factors on association kinetics, however, are not well characterized. Here we developed an alternative thermal fluctuation assay using optical trap technique, which enables to visualize consecutive binding-unbinding transition and to quantify the impact of microbead diffusion on receptor-ligand binding. Three selectin constructs (sLs, sPs, and PLE) and their ligand P-selectin glycoprotein ligand 1 were used to conduct the measurements. It was indicated that bond formation was reduced by enhancing the diffusivity of selectin-coupled carrier, suggesting that carrier diffusion is crucial to determine receptor-ligand binding. It was also found that 2D forward rate predicted upon first-order kinetics was in the order of sPs > sLs > PLE and bond formation was history-dependent. These results further the understandings in regulating association kinetics of surface-bound receptor-ligand interactions.

Long lifetime plasma channel in air generated by multiple femtosecond laser pulses and an external electrical field

The lifetime of a plasma channel produced by self-guiding intense femtosecond laser pulses in air is largely prolonged by adding a high voltage electrical field in the plasma and by introducing a series of femtosecond laser pulses. An optimal lifetime value is realized through adjusting the delay among these laser pulses. The lifetime of a plasma channel is greatly enhanced to 350 ns by using four sequential intense 100fs( FWHM) laser pulses with an external electrical field of about 350kV/m, which proves the feasibility of prolonging the lifetime of plasma by adding an external electrical field and employing multiple laser pulses. (c) 2006 Optical Society of America.

Accurate measurement of carrier-envelope phase drift for infrared femtosecond laser pulses

A novel scheme to eliminate the artificial background phase jitter is proposed for measuring the carrier-envelope phase drift of tunable infrared femtosecond pulses from an OPA laser. Different from previous methods, a reference spectral interference measurement is performed, which reveals the artificial phase jitter in the measurement process, in addition to the normal f-to-2f interference measurement between the incident laser pulses and it second harmonic. By analyzing the interference fringes, the accurate CEP fluctuation of the incident pulses is obtained. (c) 2008 Optical Society of America

Carrier-envelope phase control of carrier-wave Rabi flopping in asymmetric semiparabolic quantum well

We investigate the carrier-wave Rabi flopping effects in an asymmetric semiparabolic semiconductor quantum well (QW) with few-cycle pulse. It is found that higher spectral components of few-cycle ultrashort pulses in the semiparabolic QW depend crucially on the carrier-envelope phase (CEP) of the few-cycle ultrashort pulses: continuum and distinct peaks can be achieved by controlling the CEP. Our results demonstrate that by adjusting the CEP of few-cycle ultrashort pulses, the intersubband dynamics in the asymmetric semiparabolic QW can be controlled in an ultrashort timescale with moderate laser intensity. (c) 2008 Optical Society of America.