Annealing effects on electron-beam evaporated Al2O3 films

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al2O3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 degrees C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 degrees C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given. (c) 2004 Elsevier B.V. All rights reserved.

温梯法蓝宝石（Al2O3）晶体的脱碳去色退火研究

温度梯度法（TGT）生长的Al2O3晶体因石墨发热体在高温时的挥发和原料中过渡性金属离子的存在，晶体在不同部位呈现不同颜色，一般上部为浅红色，尾部为浅黄绿色，将TGT法生长的Al2O3晶体（Ф110×80mm^3）依次经过高温氧化气氛、高温还原气氛脱碳、去色退火实验，即“两步法”退火实验，晶体变成无色、透明，经测试，Al2O3晶体的完整性、光学透过率和光学均匀性均有显著提高。

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Effects of gamma-irradiation on Al2O3 crystals grown under reducing atmosphere

Gamma-ray irradiation-induced color centers in Al2O3 crystals grown by temperature gradient techniques (TGT) under a strongly reducing atmosphere were studied. The transition F+ -> F takes place during the irradiation process. Glow discharge mass spectroscopy (GDMS) and annealing treatments show that Fe3+ impurity ions are present in the crystals. A composite (F+-Fe3+) defect was presented to explain the origin of the 255 nm band absorption in the TGT-Al2O3 crystals. (C) 2006 Elsevier B.V. All rights reserved.

Effects of sapphire substrate annealing on ZnO epitaxial films grown by MOCVD

The annealing effects of sapphire substrate on the quality of epitaxial ZnO films grown by metalorganic chemical vapor deposition (MOCVD) were studied. The atomic steps formed on (0 0 0 1) sapphire (alpha-Al2O3) substrate surface by annealing at high temperature was analyzed by atomic force microscopy (AFM). The annealing effects of sapphire substrate on the ZnO films were examined by X-ray diffraction (XRD), AFM and photoluminescence (PL) measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface., The optimum annealing temperature of sapphire substrates is given. (c) 2006 Elsevier B.V. All rights reserved.

Cr4+在Al2O3多晶体中的光谱性能研究

Transparent polycrystalline Cr:Al2O3 ceramics were synthesized by conventional pressureless synthesis processing. The absorption and emission spectra of Cr:Al2O3 ceramics specimens before and after annealing were measured at room temperature. It was discovered that the emission spectra of Cr4+ in Al2O3 octahedral coordination site is in infrared wavelength range of 1100-1600 nm. The emission peak of Cr4+ is centered at 1223 nm, which is similar to that of Cr4+ in tetrahedral site. Al2O3 has smaller lattice constant, resulting in the larger crystal field strength, so there is a blue shift in the peak of Cr4+:Al2O3 ceramics compared to those of other Cr4+-doped crystals. And the emission band is much narrower with full width at half maximum Delta lambda 37 nm.

VTE法制备γ-LiAlO2／α-Al2O3复合衬底以及腐蚀和退火对其影响

通过气相传输平衡法(VTE)制备了γ-LiAlO2／α-Al2O3复合衬底，使用5％的稀盐酸对其进行腐蚀并在900℃退火72h。利用X射线衍射、偏光显微镜及扫描电镜对复合衬底进行了分析，发现在白宝石α面(11-20)和γ面(1—102)均获得单相多晶的γ-LiAlO2，且后者的择优取向好于前者。腐蚀可以提高样品的择优取向，在5％的稀盐酸中，时间控制在2min左右可获得较好的结果。退火后γ-LiAlO2颗粒质量得到改善，白宝石α面上γ-LiAlO2的质量优于r面上的γ-LiAlO2，两者都出现颗粒长大现象。

Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire (alpha-Al2O3) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 degrees C for 1 h in air.

Edge-defined, film-fed growth (EFG) technique for the preparation of alpha-Al2O3 : C crystal with highly sensitive thermoluminescence response

In this work, alpha-Al2O3:C, a highly sensitive thermoluminescence dosimetry crystal, was grown by the EFG method in which a graphite heating unit and shield acted as the carbon source during the growth process. The optical, luminescent properties and dosimetric characteristics of the crystal were investigated. The as-grown crystal shows a single glow peak at 536 K, which is associated with Cr3+ ions. After annealing in H-2 at 1673 K for 80 h, the crystal shows a single glow peak at 460 K and a blue emission band at 415 nm. The thermoluminescent response of the annealed crystal shows linear-sublinear-saturation characteristics in the dose range from 5 x 10(-6) to 100 Gy.

Growth and annealing properties of Mg0.4Al2.4O4 crystal

Mg0.4Al2.4O4 single crystals with good optical quality were successfully grown by the Czochralski method. The transmission spectrum indicated that the absorption edge of the crystal was at 220nm, while no apparent absorption peaks were found. The X-ray diffraction and DSC curve analysis showed that Mg0.4Al2.4O4 crystal was stable at room temperature. While after annealing in the air and hydrogen atmosphere at about 1200 degrees C,Mg0.4Al2.4O4 decomposed into Al2O3 and (MgO)(0.4)(Al2O3)(x) (0.4 < x < 1.2). The reaction mainly occurred on the crystal surface, barely inside. (C) 2008 Elsevier B.V. All rights reserved.

Study of Al2O3/MgF2 HR coatings at 355 nm

With the present work we tried to study the effective methods to improve the laser-induced damage threshold (LIDT) and reflectance of HR coatings at 355 nm. The work presented in this paper wits part of an ongoing study about vacuum annealing. It was dedicated to study the effects Of Vacuum annealing with different temperature gradients on the structure, optical properties and laser-induced damage threshold (LIDT) of 355nm Al2O3/MgF2HR coatings. A number of samples were prepared by electron beam evaporation using the same deposition process with an optimal deposition temperature of 280 degrees C. After deposition, samples were annealed in the coating chamber for 3 h with different temperature gradients. Morphologies of the samples were observed by Leica-DMRXE. Microscope, Structure of the samples had been characterized by X-ray diffraction (XRD). Transmittance and reflectance of the samples were measured by Lambda 900 Spectrometer, The LIDT of the samples was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. It was found that the temperature gradient of vacuum annealing had significant effects on the morphology, structure, absorption, and LIDT of the samples, (c) 2005 Elsevier Ltd. All rights reserved.

退火对电子束热蒸发193nm Al2O3/MgF2反射膜性能的影响

设计并镀制了193nm Al2O3/MgF2反射膜,对它们在空气中分别进行了250-400℃的高温退火,测量了样品的透射率光谱曲线和绝对反射率光谱曲线.发现样品在高反射区的总的光学损耗随退火温度的升高而下降,而后趋于饱和.采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析,发现随着退火温度的升高散射损耗有所增加.因此,总的光学损耗的下降是由于吸收损耗而不是散射损耗起主导作用.对Al2O3材料的单层膜进行了同等条件的退火处理,由它们光学性能的变化推导出它们的折射率和消光系数的变化,从而解释了相应

退火对电子束热蒸发Al2O3薄膜性能影响的实验研究

用电子束热蒸发方法镀制了Al2O3材料的单层膜，对它们在空气中进行了250～400℃的高温退火。对样品的透射率光谱曲线进行了测量，计算了样品的消光系数、折射率和截止波长。通过X射线衍射仪(XRD)测量分析了薄膜的微观结构，采用表面轮廓仪测量了样品的表面均方根粗糙度。结果发现随着退火温度的提高光学损耗下降，薄膜结构在退火温度为400℃时仍然为无定形态，样品的表面粗糙度随退火温度的升高而增加。引起光学损耗下降起主导作用的是吸收而不是散射，吸收损耗的下降主要是由于退火使材料吸收空气中的氧而进一步氧化，从而使薄膜