33 resultados para XPS STUDY
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
Layered double hydroxides (LDHs) pillared with heteropolyanions have been measured using XPS, IR, XRD spertra, and the interaction between layers and pillars discussed, The mechanism of pillars has been further discussed by XPS spectra.
Resumo:
A series of LaMnyCo1-yO3 compounds were prepared by the complexation method with citric acid. XPS was used to investigate the oxygen state in perovskite-type (ABO(3)) Complex oxide LaMnyCo1-yO3 catalysts. The result showed that three oxygen species (alpha
Resumo:
In this work the radiation-induced structural changes in F-46 were studied by XPS. In carbon-1s spectra of a highly crosslinked F-46 sheet, the slight increase observed in relative area under the peak due to CF3 was explained by the radiation-induced scission of polymer chains. The peak at 287.6 eV appearing in the spectra caused by ionizing radiation was attributed to carbon structures without primary fluorine substituents, in both branching and unsaturated structures, while that at 289.3 eV was assigned to = CF groups in mid-chain double bonds.
Resumo:
The rare earth monophthalocyanine complexes, LnPcCl and LnPc(OAc)2 (Ln = Tb, Ho, Tm, Lu, Pc=Phthalocyanine, OAc = Acetate), were synthesized. The electronic structures of the complexes have been studied by means of XPS. The experimental results of binding energies for the complexes indicate that the bonds of the complexes have a certain covalent character depending on L-->Ln charge transfer. This L-->Ln charge transfer process of phythalocyanine complexes differs from that of crown ether complexes. Both coordination and substitution are included in the former case, but only coordination in the latter. Phthalocyanine ring is an electrophilic group and its electronegativity is large. So, the O1s binding energies of coordinating oxygen atoms of acetate in LnPc(OAc)2 are larger than those of Ln(OAc)3. The magnitude of valent charge delocalized from ligand onto metal atom is dependent on electronegativity, coordination number, valence state and so on. Because coordination number of Ln in LnPc(OAc)2 is larger than that in LnPcCl and electronegativity of Clin LnPcCl is larger than that of O in LnPc(OAc)2, the Ln4d5/2 binding energies of LnPc (OAc)2 are less than those of LnPcCl.
Resumo:
The corrosion behaviour of titanium substance and the XPS characterization of Ti surface in the H2C2O4 solution have been first studied by X-ray photoelectron spectroscopy, The experimental results show that there am mile Ti-2 and Ti2+ on sample surface in 10% H2C2O4 solution for two boars corrosion at 80 degrees C, but if corrosion is extended to 4 hones, the surface composition is mainly TiO2 with a small amount of Ti2+. This result corresponds to the structure of TiH1.642 composion in sample surface found by XRD analysis. Since bath TiO2 and the surface coating RuO2 are of Gald-Redstone structure, therefore electrode materials of Ti-Ru are stable in chemical industry.
Resumo:
XPS has extensively been applied to the study of polymers, in which a considerably important topic is the surface phase separations in block copolymers and blends. Copolymers (or blends) will produce a phase separation if their components are in-
Resumo:
Stannic oxide xerogel was prepared by a forced hydrolysis method using SnCl4 as the precursor. The average grain sizes of the nanosized stannic oxide powders varied with the sintering temperatures. The powders were characterized by several different physico-chemical techniques. TEM was employed for the direct observation on grain sizes, shape and state of aggregation of the particles. XRD technique was used for the determination of the crystalline structure. Microstructural parameters of average crystallite size (
Resumo:
Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
Nonstiochiometric SnO2-x nanocrystalline material were successfully prepared through Sol-Gel process using anhydrous stannic chloride and iso-propyl alcohol. TEM observation shows that the mean diameter of the powder sintered at 700 degrees C for 2 hours is about 20 nm. By the investigation of XRD and ESR, we can conclude that the sample sintered at 300 degrees C for 2 hours was amorphous and it grew into nanocrystalline with the oxygen vacancies and defects when sintered at 700 degrees C for 2 hours. Using these conclusion, the ESR signals and the difference between the two SnO2-x samples are explained.
Resumo:
Thin films of PSt/PMAA and PEO-PSt-PEO block polymers were deposited on a polystyrene substrate by solution adsorption (with or without solvent treatment), and the film surfaces were characterized by means of XPS. Direct solvent - casting of PEO-PSt-PEO from benzene solutions resulted in PSt-rich surfaces, whereas PMAA richer surfaces were obtained for PSt/PMAA films cast from DMF solutions. Moreover, solvent treatment after casting had profound effect on the film surface composition. Treatment with water markedly increased the surface concentration of polar PEO segments. In the case of PSt-PMAA block polymers, the PSt content on the surface increased in the order of water < ethanol < cyclohexane < petroleum ether, the last-named giving films with almost pure PSt surface. It is well worth noticing that the bulk composition had little to do with the surface composition for both PSt/PMAA and PEO-PSt-PEO block polymers within the composition range investigated when subsequent solvent treatment was applied.
Resumo:
The adsorption of K on the n-GaAs(I 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission spectroscopy (SR-PES). The Ga3d and As3d core level was measured for clean and K adsorbed GaAs(I 0 0) surface. The adsorption of K induced chemical reaction between K and As, and the K-As reactant formed when the K coverage theta > I ML. The chemical reaction between K and Ga did not occur, but Ga atoms were exchanged by K atoms. From the data of band bending, the Schottky barrier is 0.70 eV. The Fermi-level pinning was not caused by defect levels. The probable reason is that the dangling bonds of surface Ga atoms were filled by the outer-shell electrons of K atoms, forming a half-filled surface state. The Fermi-level pinning was caused by this half-filled surface state. (c) 2004 Elsevier B.V. All rights reserved.
Resumo:
Epitaxial cerium dioxide films on single-crystal silicon substrates (CeO2/Si) have been grown by a dual mass-analyzed low-energy ion beam deposition (IBD) system. By double-crystal X-ray diffraction (XRD), Full Width at Half Maximum (FWHM) are 23' and 33' in the rocking curves for (222) and (111) faces of the CeO2 film, respectively, and the lattice-mismatch Delta a/a with the substrate is about - 0.123%. The results show that the CeO2/Si grown by IBD is of high crystalline quality. In this work, the CeO2/Si heterostructure were investigated by X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) measurements. Especially, XPS and AES depth profiling was used to analyze the compositions and structures in the interface regions of the as-grown and post-annealed CeO2/Si. It was found that there was no silicon oxide in the interface region of the as-grown sample but silicon oxide in the post-annealed sample. The reason for obtaining such high quality heterostructure mainly depends on the absence of silicon oxide in the surface at the beginning of the deposition. (C) 1998 Elsevier Science Ltd. All rights reserved.