图形用户界面系统国际化的研究

国际化的GUI系统不仅仅要能够正确地显现多语言文本，而且要能够产生与文字书写方向相应的用户界面。目前主要的GUI库仅支持镜像，还不存在一个GUI框架既支持垂直文字又支持双向文字。在本文中，分析了开发国际化GUI系统过程中面临的问题，给出了一个层次模型来实现动态用户界面风格。

General Solution to Two-Dimensional Nonslipping JKR Model with a Pulling Force in an Arbitrary Direction

In this paper, a generalized JKR model is investigated, in which an elastic cylinder adhesively contacts with an elastic half space and the contact region is assumed to be perfect bonding. An external pulling force is acted on the cylinder in an arbitrary direction. The contact area changes during the pull-off process, which can be predicted using the dynamic Griffith energy balance criterion as the contact edge shifts. Full coupled solution with an oscillatory singularity is obtained and analyzed by numerical calculations. The effect of Dundurs' parameter on the pull-off process is analyzed, which shows that a nonoscillatory solution can approximate the general one under some conditions, i.e., larger pulling angle (pi/2 is the maximum value), smaller a/R or larger nondimensional parameter value of Delta gamma/E*R. Relations among the contact half width, the external pulling force and the pulling angle are used to determine the pull-off force and pull-off contact half width explicitly. All the results in the present paper as basic solutions are helpful and applicable for experimenters and engineers.

A field model interpretation of crack initiation and growth behavior in ferroelectric ceramics: change of poling direction and boundary condition

Strain energy density expressions are obtained from a field model that can qualitatively exhibit how the electrical and mechanical disturbances would affect the crack growth behavior in ferroelectric ceramics. Simplification is achieved by considering only three material constants to account for elastic, piezoelectric and dielectric effects. Cross interaction of electric field (or displacement) with mechanical stress (or strain) is identified with the piezoelectric effect; it occurs only when the pole is aligned normal to the crack. Switching of the pole axis by 90degrees and 180degrees is examined for possible connection with domain switching. Opposing crack growth behavior can be obtained when the specification of mechanical stress sigma(infinity) and electric field E-infinity or (sigma(infinity), E-infinity) is replaced by strain e and electric displacement D-infinity or (epsilon(infinity), D-infinity). Mixed conditions (sigma(infinity),D-infinity) and (epsilon(infinity),E-infinity) are also considered. In general, crack growth is found to be larger when compared to that without the application of electric disturbances. This includes both the electric field and displacement. For the eight possible boundary conditions, crack growth retardation is identified only with (E-y(infinity),sigma(y)(infinity)) for negative E-y(infinity) and (D-y(infinity), epsilon(y)(infinity)) for positive D-y(infinity) while the mechanical conditions sigma(y)(infinity) or epsilon(y)infinity are not changed. Suitable combinations of the elastic, piezoelectric and dielectric material constants could also be made to suppress crack growth. (C) 2002 Published by Elsevier Science Ltd.

Circular brass foil failed by plugging opposite to direction of incident laser beam

The peripheries of circular foils of 30 mm in diameter and 0.1 mm thick are fixed while their surfaces are subjected to a long pulsed laser over a central region that may vary from 2 mm to 6 mm in diameter. Failure is observed and classified into three stages; they are referred to as thermal bulging, localized shear deformation, and perforation by plugging. A distinct feature of the failure mode is that bulging and plugging occurred in the direction opposite to the incident laser beam. Such a phenomenon can be expected to occur for a laser intensity threshold value of about 0.61 x 10(6) W/cm(2) beyond which local melting of the material begins to take place.

Extending Tsai-Hill and norris criteria to predict cracking direction in orthotropic materials

methods of lifetime measurement are discussed.

Prediction of mixed-mode cracking direction in random, short-fibre composite-materials

The prediction of cracking direction in composite materials is of significance to the design of composite structures. This paper presents several methods for predicting the cracking direction in the double grooved tension-shear specimen which gives mixed-mode cracking. Five different criteria are used in this analysis: two of them have been used by other investigators and the others are proposed by the present authors. The strain energy density criterion proposed by G.C. Sih is modified to take account of the influence of the anisotropy of the strength on the direction of crack. The two failure criteria of Tsai-Hill and Norris are extended to predict the crack orientation. The stress distributions in the near-notch zone are calculated by using the 8-node quadrilateral isoparametric finite element method. The predictions of all the criteria except one are in good agreement with the experimental measurement. In addition, on the basis of the FEM results, the size of the zone in which the singular term is dominant is estimated.

Surface-enhanced Raman scattering substrate fabricated by femtosecond laser direct writing

We report the fabrication of a novel surface-enhanced Raman scattering (SERS) substrate with a controllable enhancement factor (EF) using femtosecond laser direct writing on Ag+-doped phosphate glass followed by chemical plating at similar to 40 degrees C. Silver seeds were first photoreduced using a femtosecond laser in a laser-irradiated area and then transformed into silver nanoparticles of suitable size for SERS application in the subsequent chemical plating. Rhodamine 6G was used as a probing molecule to investigate the enhancement effect of a Raman signal on the substrate. Nearly homogenous enhancement of the Raman signal over the Substrate was achieved, and the EF of the substrate was controlled to some extent by adjusting fabrication parameters. Moreover, the ability of forming a SERS platform in an embedded microfluidic chamber would be of great use for establishing a compact lab-on-a-chip device based on Raman analysis.

Direct writing computer-generated holograms on metal film by an infrared femtosecond laser

Writing computer-generated holograms has been achieved by using near infrared femtosecond laser selective ablation of metal film deposited on glass substrate. The diffraction features with data reconstruction of fabricated computer-generated holograms were evaluated. Both transmission and reflection holograms can be fabricated in a single process. The process required no mask, no pre- or post-treatment of the substrate. (C) 2005 Optical Society of America.

Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing

SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using all ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in Structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.

Novel triplexing-filter design using silica-based direction coupler and an arrayed waveguide grating

A new triplexing filter based on a silica direction coupler and an arrayed waveguide grating is presented. Using a combination of a direction coupler and an arrayed waveguide grating, a 1310-nm channel is multiplexed and 1490- and 1550-nm channels are demultiplexed for fiber-to-the-home. The direction coupler is used to coarsely separate the 1310-nm channel from the 1490- and 1550-nm channels. Subsequently, an arrayed waveguide grating is used to demultiplex the 1490- from 1550-nm channel. The simulated spectra show the 1-dB bandwidth of 110 nm for the 1310-nm channel and 20 and 20.5 nm for the 1490- and 1550-nm channels. The insertion loss is only 0.15 dB for 1310 nm and 5 dB for 1490 and 1550 nm. The crosstalk between the 1490- and 1550-nm channels was less than -35 dB. (C) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3065508]

The compact microcrystalline Si thin film with structure uniformity in the growth direction by hydrogen dilution profile

The hydrogen dilution profiling (HDP) technique has been developed to improve the quality and the crystalline uniformity in the growth direction of mu c-Si:H thin films prepared by hot-wire chemical-vapor deposition. The high H dilution in the initial growth stage reduces the amorphous transition layer from 30-50 to less than 10 nm. The uniformity of crystalline content X-c in the growth direction was much improved by the proper design of hydrogen dilution profiling which effectively controls the nonuniform transition region of Xc from 300 to less than 30 nm. Furthermore, the HDP approach restrains the formation of microvoids in mu c-Si: H thin films with a high Xc and enhances the compactness of the film. As a result the stability of mu c-Si: H thin films by HDP against the oxygen diffusion, as well as the electrical property, is much improved. (c) 2005 American Institute of Physics.

Self-organized superlattices along the [001] growth direction in In0.52Al0.48As layers grown on nominally (001) InP substrates by molecular beam epitaxy

Horizontal self-organized superlattice structures consisting of alternating In-rich and Al-rich layers formed naturally during solid-source molecular beam epitaxy (MBE) growth of In0.52Al0.48As on exactly (001) InP substrates, with In and At fluxes unchanged. The growth temperatures were changed from 490 to 510 degrees C, the most commonly used growth temperature for In0.52Al0.48As alloy. No self-organized superlattices (SLs) were observed at the growth temperature 490 degrees C, and self-organized SLs were observed in InAlAs layers at growth temperatures ranging from 498 to 510 degrees C. The results show that the period of the SLs is very highly regular, with the value of similar to 6 nm, and the composition of In or Al varies approximately sinusoidally along the [001] growth direction. The theoretical simulation results confirm that the In composition modulation amplitude is less than 0.02 relative the In composition of the In0.52Al0.48As lattice matched with the InP substrate. The influence of InAs self-organized quantum wires on the spontaneously formed InxAl1-xAs/InyAl1-yAs SLs was also studied and the formation of self-organized InxAl1-xAs/InyAl1-yAs SLs was attributed to the strain-mediated surface segregation process during MBE growth of In0.52Al0.48As alloy. (C) 2005 Published by Elsevier Ltd.

Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate

Single-crystalline alpha-Si3N4 nanowires are controlled to grow perpendicular to the wet-etched trenches in the SiO0.94 film on the plane of the Si substrate without metal catalysis. A detailed characterization is carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photoluminescence at 600 nm from alpha-Si3N4 nanowires is attributed to the recombination at the defect state formed by the Si dangling bond N3 equivalent to Si-center dot. The growth mechanism is considered to be related to the catalysis and nitridation of SiO nanoclusters preferably re-deposited around the inner corner of the trenches, as well as faster Si diffusion along the slanting side walls of the trenches. This simple direction-controlled growth method is compatible with the CMOS process, and could facilitate the fabrication of alpha-Si3N4 nanoelectronic or nanophotonic devices on the Si platform.