Measurement Of Fracture Toughness And Interfacial Shear Strength Of Hard And Brittle Cr Coating On Ductile Steel Substrate

The fracture toughness and interfacial adhesion properties of a coating on its substrate are considered to be crucial intrinsic parameters determining performance and reliability of coating-substrate system. In this work, the fracture toughness and interfacial shear strength of a hard and brittle Cr coating on a normal medium carbon steel substrate were investigated by means of a tensile test. The normal medium carbon steel substrate electroplated with a hard and brittle Cr coating was quasi-statically stretched to induce an array of parallel cracks in the coating. An optical microscope was used to observe the cracking of the coating and the interfacial decohesion between the coating and the substrate during the loading. It was found that the cracking of the coating initiated at critical strain, and then the number of the cracks of the coating per unit axial distance increased with the increase in the tensile strain. At another critical strain, the number of the cracks of the coating became saturated, i.e. the number of cracks per unit axial distance became a constant after this critical strain. Based on the experiment result, the fracture toughness of the brittle coating can be determined using a mechanical model. Interestingly, even when the whole specimen fractured completely under an extreme strain of the substrate, the interfacial decohesion or buckling of the coating on its substrate was completely absent. The test result is different from that appeared in the literature though the identical test method and the brittle coating/ductile metal substrate system are taken. It was found that this difference can be attributed to an important mechanism that the Cr coating on the steel substrate has a good adhesion, and the ultimate interfacial shear strength between the Cr coating and the steel substrate has exceeded the maximum shear flow strength level of the steel substrate. This result also indicates that the maximum shear flow strength level of the ductile steel substrate can be only taken as a lower bound estimate on the ultimate shear strength of the interface. This estimation of the ultimate interfacial shear strength is consistent with the theoretical analysis and prediction presented in the literature.

Measurement of velocity profiles in a rectangular microchannel with aspect ratio α = 0.35

In this work, we measured 14 horizontal velocity profiles along the vertical direction of a rectangular microchannel with aspect ratio alpha = h/w = 0.35 (h is the height of the channel and w is the width of the channel) using microPIV at Re = 1.8 and 3.6. The experimental velocity profiles are compared with the full 3D theoretical solution, and also with a Poiseuille parabolic profile. It is shown that the experimental velocity profiles in the horizontal and vertical planes are in agreement with the theoretical profiles, except for the planes close to the wall. The discrepancies between the experimental data and 3D theoretical results in the center vertical plane are less than 3.6%. But the deviations between experimental data and Poiseuille's results approaches 5%. It indicates that 2D Poiseuille profile is no longer a perfect theoretical approximation since a = 0.35. The experiments also reveal that, very near the hydrophilic wall (z = 0.5-1 mu m), the measured velocities are significantly larger than the theoretical velocity based on the no-slip assumption. A proper discussion on some physical effects influencing the near wall velocity measurement is given.

An Instrumented Indentation Method for Young's Modulus Measurement with Accuracy Estimation

The relationships between indentation responses and Young's modulus of an indented material were investigated by employing dimensional analysis and finite element method. Three representative tip bluntness geometries were introduced to describe the shape of a real Berkovich indenter. It was demonstrated that for each of these bluntness geometries, a set of approximate indentation relationships correlating the ratio of nominal hardness/reduced Young's modulus H (n) /E (r) and the ratio of elastic work/total work W (e)/W can be derived. Consequently, a method for Young's modulus measurement combined with its accuracy estimation was established on basis of these relationships. The effectiveness of this approach was verified by performing nanoindentation tests on S45C carbon steel and 6061 aluminum alloy and microindentation tests on aluminum single crystal, GCr15 bearing steel and fused silica.

Reduced dynamics with renormalization in solid-state charge qubit measurement

Quantum measurement will inevitably cause backaction on the measured system, resulting in the well-known dephasing and relaxation. In this paper, in the context of solid-state qubit measurement by a mesoscopic detector, we show that an alternative backaction known as renormalization is important under some circumstances. This effect is largely overlooked in the theory of quantum measurement.

FREQUENCY RESPONSE OF FIBER RING RESONATOR AND ITS APPLICATION IN DFB LASER WAVELENGTH VARIATION MEASUREMENT

Frequency response of a fiber ring resonator (FRR) composed of an ordinary optical coupler and a segment of optical fiber is theoretically and experimentally investigated. The frequency response equation based oil small-signal modulation is derived and studied in detail. It is shown that the shape of the frequency response curve is very sensitive to the wavelength; as a result, the FRR can be applied to measure the wavelength of a lightwave source with high resolution. With this method, we demonstrate the measurement of tiny changes of wavelength of a DFB laser. (C) 2009 Wiley Periodicals. Inc. Microwave Opt Technol Lett 51 2444-2448, 2009 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24608

Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy

The valence band offsets of the wurtzite polar C-plane and nonpolar A-plane InN/ZnO heterojunctions are directly determined by x-ray photoelectron spectroscopy to be 1.76 +/- 0.2 eV and 2.20 +/- 0.2 eV. The heterojunctions form in the type-I straddling configuration with a conduction band offsets of 0.84 +/- 0.2 eV and 0.40 +/- 0.2 eV. The difference of valence band offsets of them mainly attributes to the spontaneous polarization effect. Our results show important face dependence for InN/ZnO heterojunctions, and the valence band offset of A-plane heterojunction is more close to the "intrinsic" valence band offset.

Weak measurement of qubit oscillations with strong response detectors: Violation of the fundamental bound imposed on linear detectors

Qubit measurement by mesoscopic charge detectors has received great interest in the community of mesoscopic transport and solid-state quantum computation, and some controversial issues still remain unresolved. In this work, we revisit the continuous weak measurement of a solid-state qubit by single electron transistors (SETs) in nonlinear-response regime. For two SET models typically used in the literature, we find that the signal-to-noise ratio can violate the universal upper bound "4," which is imposed quantum mechanically on linear-response detectors. This different result can be understood by means of the cross correlation of the detector currents by viewing the two junctions of the single SET as two detectors. Possible limitation of the potential-scattering approach to this result is also discussed.

Quantum measurement of a solid-state qubit: A unified quantum master equation approach

Quantum measurement of a solid-state qubit by a mesoscopic detector is of fundamental interest in quantum physics and an essential issue in quantum computing. In this work, by employing a unified quantum master equation approach constructed in our recent publications, we study the measurement-induced relaxation and dephasing of the coupled-quantum-dot states measured by a quantum-point contact. Our treatment pays particular attention on the detailed-balance relation, which is a consequence of properly accounting for the energy exchange between the qubit and detector during the measurement process. As a result, our theory is applicable to measurement at arbitrary voltage and temperature. Both numerical and analytical results for the qubit relaxation and dephasing are carried out, and important features are highlighted in concern with their possible relevance to future experiments.

Spontaneous relaxation of a charge qubit under electrical measurement

In this work we first derive a generalized conditional master equation for quantum measurement by a mesoscopic detector, then study the readout characteristics of qubit measurement where a number of remarkable new features are found. The work would, in particular, highlight the qubit spontaneous relaxation effect induced by the measurement itself rather than an external thermal bath.

Continuous weak measurement and feedback control of a solid-state charge qubit: A physical unravelling of non-Lindblad master equation

Conventional quantum trajectory theory developed in quantum optics is largely based on the physical unravelling of a Lindblad-type master equation, which constitutes the theoretical basis of continuous quantum measurement and feedback control. In this work, in the context of continuous quantum measurement and feedback control of a solid-state charge qubit, we present a physical unravelling scheme of a non-Lindblad-type master equation. Self-consistency and numerical efficiency are well demonstrated. In particular, the control effect is manifested in the detector noise spectrum, and the effect of measurement voltage is discussed.

Quantum measurement characteristics of a double-dot single electron transistor

Owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed by comparing the measurement time with the measurement-induced dephasing time.

Quantum measurement of single electron state by a quantum point contact

Closely related to the quantum information processing in solid states, we study the quantum measurement of single electron state by a mesoscopic charge-sensitive detector, namely the quantum point contact (QPC). We find that the conventional Lindblad-type master equation is not appropriate for describing the underlying measurement dynamics. The treatment developed in this work properly accounts for the energy-exchange between the detector and the measured system, and its role on the detailed-balance relation. A valid description for the QPC measurement dynamics is provided which may have impact on the study of quantum measurement and quantum feedback control in solid states.

Quantum measurement of an electron in a disordered potential: Delocalization versus measurement voltages

Quantum point contact (QPC), one of the typical mesoscopic transport devices, has been suggested to be an efficient detector for quantum measurement. In the context of two-state charge qubit, our previous studies showed that the QPC's measurement back-action cannot be described by the conventional Lindblad quantum master equation. In this work, we study the measurement problem of a multistate system, say, an electron in disordered potential, subject to the quantum measurement of the mesoscopic detector QPC. The effect of measurement back-action and the detector's readout current are analyzed, where particular attention is focused on some new features and the underlying physics associated with the measurement-induced delocalization versus the measurement voltages.

Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 +/- A 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 +/- A 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.

Precision measurement of excited spectra of oxygen ions

Spectra of the ionized oxygen atom were researched with the Pro-500i monochromator equipped with CCD. The beam foil method was used at energy of 2 MeV in a 2 x 1.7 Tandem accelerator. In this work, we report 201 spectral lines determined in the region 250-350 nm, and most spectral lines were attributed to n, l energy level transitions from O II to O IV atoms. Our experimental results are in good agreement with existing theoretical calculations. Many lines reported in this paper have not been measured in past experiments, and a majority of them are week transitional lines.