Quantum computation with coupled quantum dots embedded in optical microcavities

Based on an idea that spatial separation of charge states can enhance quantum coherence, we propose a scheme for a quantum computation with the quantum bit (qubit) constructed from two coupled quantum dots. Quantum information is stored in the electron-hole pair state with the electron and hole located in different dots, which enables the qubit state to be very long-lived. Universal quantum gates involving any pair of qubits are realized by coupling the quantum dots through the cavity photon which is a hopeful candidate for the transfer of long-range information. The operation analysis is carried out by estimating the gate time versus the decoherence time.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

System size dependence of associated yields in hadron-triggered jets STAR Collaboration

We present results on the system size dependence of high transverse momentum di-hadron correlations at root s(NN) = 200 GeV as measured by STAR at RHIC. Measurements in d + Au, Cu + Cu and Au + Au collisions reveal similar jet-like near-side correlation yields (correlations at small angular separation Delta phi similar to 0, Delta eta similar to 0) for all systems and centralities. Previous measurements have shown Chat the away-side (Delta phi similar to pi) yield is suppressed in heavy-ion collisions. We present measurements of the away-side Suppression as a function of transverse momentum and centrality in Cu + Cu and Au + Au collisions. The suppression is found to be similar in Cu + Cu and An + An collisions at a similar number of participants. The results are compared to theoretical calculations based on the patron quenching model and the modified fragmentation model. The observed differences between data and theory indicate that the correlated yields presented here will further constrain dynamic energy loss models and provide information about the dynamic density profile in heavy-ion collisions. (C) 2009 Elsevier B.V. All rights reserved.

separation of duty in trust-based collaboration

Chinese Assoc Cryptol Res, State Key Lab Informat Secur, Inst Software, Grad Univ Chinese Acad Sci, Natl Nat Sci Fdn China

Local Feature Based Geometric-Resistant Image Information Hiding

Watermarking aims to hide particular information into some carrier but does not change the visual cognition of the carrier itself. Local features are good candidates to address the watermark synchronization error caused by geometric distortions and have attracted great attention for content-based image watermarking. This paper presents a novel feature point-based image watermarking scheme against geometric distortions. Scale invariant feature transform (SIFT) is first adopted to extract feature points and to generate a disk for each feature point that is invariant to translation and scaling. For each disk, orientation alignment is then performed to achieve rotation invariance. Finally, watermark is embedded in middle-frequency discrete Fourier transform (DFT) coefficients of each disk to improve the robustness against common image processing operations. Extensive experimental results and comparisons with some representative image watermarking methods confirm the excellent performance of the proposed method in robustness against various geometric distortions as well as common image processing operations.

High-mobility pentacene thin-film transistors with copolymer-gate dielectric

Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PNIMA-GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 10(5). In linear region (V-DS = -2V), the field-effect mobility of device increases with the increase in gate field at low-voltage region (V-G < - 20 V), and a mobility of 0.33 cm(2)/Vs can be obtained when V-G > 20 V. In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm(2)/Vs can be obtained at V-G = -95V. The influence of voltage on mobility of device was investigated.