Comparison of uniform amplitude beam and intercepted Gaussian beam superresolution theories

The general superresolution theories for uniform amplitude beams and intercepted Gaussian beams are investigated. For these two types of incident beam, both two-zone amplitude and pure-phase filters are adopted to provide specific numerical descriptions of their differences in superresolution performances. Simulated results of comparisons between their performances indicate that, with the same spot size ratio, the intercepted Gaussian beam achieves a higher central image brightness ratio and significantly lower side-lobe effect irrespective of the filter used. (c) 2008 Elsevier Ltd. All rights reserved.

A uniform 290 nm periodic square structure on ZnO fabricated by two-beam femtosecond laser ablation

A uniform submicron periodic square structure was fabricated on the surface of ZnO by a technique of two linearly polarized femtosecond laser beams with orthogonal polarizations ablating material alternately. The formed two-dimensional ordering submicron structure consists of close-packed submicron squares with a spacial periodicity of 290 nm, which arises from the intercrossing of two orthogonal submicron ripple structures induced by the two beams respectively. The result demonstrates a noninterference effect of two-beam ablation based on the alternate technique, which should come from the polarization-dependent enhancement of the subwavelength ripple structure and the large interval of two alternate pulses. This two-beam alternate ablation technique is expected to open up prospects for the submicron fabrication of wide-bandgap materials.

Comparison between complex amplitude envelope representation and complex analytic signal representation in studying pulsed Gaussian beam

Analytic propagation expressions of pulsed Gaussian beam are deduced by using complex amplitude envelope representation and complex analytic signal representation. Numerical calculations are given to illustrate the differences between them. The results show that the major difference between them is that there exists singularity in the beam obtained by using complex amplitude envelope representation. It is also found that singularity presents near propagation axis in the case of broadband and locates far from propagation axis in the case of narrowband. The critical condition to determine what representation should be adopted in studying pulsed Gaussian beam is also given. (C) 2004 Elsevier B.V. All rights reserved.

Laser beam shaping system with a radial birefringent filter

Reshaping of a Gaussian laser beam into a uniform or other intensity distribution is required for various applications. The laser beam shaping system with a radial birefringent filter is presented in this paper. With such a system the Gaussian beams can be transformed into uniform or annular beams. The theory and simulation of the proposed systems are described in detail. The primary advantage of such a system is that the out beam pro. le can be tunable with the rotation of the radial birefringent element.

Analysis of beam-quality degradation in nonlinear frequency conversion

Based on the ripple transfers of electric-field amplitude and phase in frequency tripling, simple formulas are derived for the harmonic laser's beam-quality factor M-3omega(2), with an arbitrary fundamental incidence to ideal nonlinear crystals. Whereas the harmonic beam's quality is generally degraded, the beam's divergence is similar to that of the fundamental after nonlinear frequency conversion. For practical crystals with periodic surface ripples that are caused by their machining, a multiorder diffractive model is presented with which the focusing properties of harmonic beams can be studied. Predictions of the theories are shown to be in excellent agreement with full numerical simulations. (C) 2002 Optical Society of America.

Design of super-resolution filters with a Gaussian beam in optical data storage systems

Super-resolution filters based on a Gaussian beam are proposed to reduce the focusing spot in optical data storage systems. Both of amplitude filters and pure-phase filters are designed respectively to gain the desired intensity distributions. Their performances are analysed and compared with those based on plane wave in detail. The energy utilizations are presented. The simulation results show that our designed super-resolution filters are favourable for use in optical data storage systems in terms of performance and energy utilization.

Laser tunable Toraldo superresolution with a uniform nonlinear pupil filter

We demonstrate that it is possible to reduce the focal spot size by inserting a uniform nonlinear thin film at the aperture of a focusing lens. The reduction of spot size is tunable by adjusting the incoming laser power. In comparison with the original diffraction spot, the transverse spot size can be reduced 0.65 times. The nonlinear thin film acts effectively as a Toraldo filter, and the phase and amplitude modulation stems from the laser-induced variances in the transmission of the thin film. The proposed technique removes the need of fabricating annular pupil filters. (C) 2008 Optical Society of America.

beam-shaping microstructure optical fiber

Microstructure optical fiber with uniform intensity distribution of the fundamental mode is proposed. The design guide line and characteristics of this kind fiber are demonstrated. The relationship between refractive index profile and structure parameters is investigated. The mechanism of forming uniform fundamental mode in these fibers is analyzed.

Differential amplitude modulation of auditory evoked cortical potentials associated with brain state in the freely moving rhesus monkey

We simultaneously recorded auditory evoked potentials (AEP) from the temporal cortex (TCx), the dorsolateral prefrontal cortex (dPFCx) and the parietal cortex (PCx) in the freely moving rhesus monkey to investigate state-dependent changes of the AEP. AEPs obtained during passive wakefulness, active wakefulness (AW), slow wave sleep and rapid-eye-movement sleep (REM) were compared. Results showed that AEP from all three cerebral areas were modulated by brain states. However, the amplitude of AEP from dPFCx and PCx significantly appeared greater attenuation than that from the TCx during AW and REM. These results indicate that the modulation of brain state on AEP from all three cerebral areas investigated is not uniform, which suggests that different cerebral areas have differential functional contributions during sleep-wake cycle. (C) 2002 Elsevier Science Ireland Ltd.. All rights reserved.

A new way of uniform splitting of the optical power by directional coupling between the photonic crystal waveguides

Directional coupler can be constructed by putting multiple photonic crystal waveguides together. The propagation of the optical field entering this system symmetrically was analysed numerically according to self-imaging principle. On the basis of this structure, ultracompact multiway beam splitter was designed and the ones with three and four output channels were discussed in details as examples. By simply tuning the effective refractive index of two dielectric rods in the coupler symmetrically to induce the redistribution of the power of the optical field, uniform or free splitting can be achieved. Compared with the reported results, this way is simpler, more feasible and more efficient and has extensive practical value in future photonic integrated circuits.

Self-organized superlattices along the [001] growth direction in In0.52Al0.48As layers grown on nominally (001) InP substrates by molecular beam epitaxy

Horizontal self-organized superlattice structures consisting of alternating In-rich and Al-rich layers formed naturally during solid-source molecular beam epitaxy (MBE) growth of In0.52Al0.48As on exactly (001) InP substrates, with In and At fluxes unchanged. The growth temperatures were changed from 490 to 510 degrees C, the most commonly used growth temperature for In0.52Al0.48As alloy. No self-organized superlattices (SLs) were observed at the growth temperature 490 degrees C, and self-organized SLs were observed in InAlAs layers at growth temperatures ranging from 498 to 510 degrees C. The results show that the period of the SLs is very highly regular, with the value of similar to 6 nm, and the composition of In or Al varies approximately sinusoidally along the [001] growth direction. The theoretical simulation results confirm that the In composition modulation amplitude is less than 0.02 relative the In composition of the In0.52Al0.48As lattice matched with the InP substrate. The influence of InAs self-organized quantum wires on the spontaneously formed InxAl1-xAs/InyAl1-yAs SLs was also studied and the formation of self-organized InxAl1-xAs/InyAl1-yAs SLs was attributed to the strain-mediated surface segregation process during MBE growth of In0.52Al0.48As alloy. (C) 2005 Published by Elsevier Ltd.

Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique

Self-assembled InAs quantum wires (QWRs) on InP(001) substrate have been grown by molecular-beam epitaxy, using a strain compensating technique. Atom force microscope, Transmission electron microscopy, and high-resolution x-ray diffraction are used to characterize their structural properties. We proposed that, by carefully adjusting composition of InAlGaAs buffer layer and strain compensating spacer layers, stacked QWRs with high uniformity could be achieved. In addition, the formation mechanism and vertical anti-correlation of QWRs are also discussed. (c) 2005 American Institute of Physics.

Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode

We compared two reflection-mode negative electron affinity (NEA) GaAs photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. One sample is uniform doping, and another is gradient doping. Experimental curves of spectral response sensitivity and quantum efficiency are obtained. The thicknesses of the two cathodes are both 2.6 mu m. The integrated sensitivity of the uniform doping one is 1966 mu A/lm, and that of the gradient-doping one is 2421 mu A/lm. The escape probability and diffusion length are fitted from the spectral response curves. For the uniform-doping sample, the escape probability is 0.45 and the diffusion length is 5 mu m. For the gradient-doping sample, the escape probability is 0.55 and the diffusion length is 5.5 mu m. (c) 2007 Optical Society of America.

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. The step arrays extend over several mum without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

Self-assembled InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a (311)B InP substrate. Transmission electron microscopy clearly shows that a high density of smaller InAs islands can be obtained by using such a high index substrate. After introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs are much more uniform in size and form two-dimensional well ordered arrays. The photoluminescence (PL) spectra also confirm that the InAs QDs grown on underlying In0.52Al0.24Ga0.24As have a better quality than those grown in the In0.52Al0.48As matrix. A simple calculation indicates that the redshift of the PL peak energy mainly results from InAs QDs on underlying In0.52Al0.24Ga0.24As of large size. (C) 2001 American Institute of Physics.