Electrochemistry and electrogenerated chemiluminescence of SiO2 nanoparticles/tris(2,2 '-bipyridyl)ruthenium(II) multilayer films on indium tin oxide electrodes

In this paper, a simple method of preparing {SiO2/Ru-(bPY)(3)(2+)}(n) multilayer films was described. Positively charged tris(2,2'-bipyridyl)ruthenium(II) (Ru(bpy)(3)(2+)) and negatively charged SiO2 nanoparticles were assembled on ITO electrodes by a layer-by-layer method. Electrochemical and electrogenerated chemiluminescence (ECL) behaviors of the {SiO2/Ru(bpy)(3)(2+)}(n) multilayer film-modified electrodes were studied. Cyclic voltammetry, UV-visible spectroscopy, quartz crystal microbalance, and ECL were adopted to monitor the regular growth of the multilayer films. The multilayer films containing Ru(bpy)(3)(2+) was used for ECL determination of TPA, and the sensitivity was more than 1 order of magnitude higher than that observed for previous reported immobilization methods for the determination of TPA. The multilayer films also showed better stability for one month at least. The high sensitivity and stability mainly resulted from the high surface area and special structure of the silica nanoparticles.

Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts

Indium-tin-oxide (ITO)/n-GaN Schottky contacts were prepared by e-beam evaporation at 200 degrees C under various partial pressures of oxygen. X-ray photoemission spectroscopy and positron beam measurements were employed to obtain chemical and structural information of the deposited ITO films. The results indicated that the observed variation in the reverse leakage current of the Schottky contact and the optical transmittance of the ITO films were strongly dependent on the quality of the ITO film. The high concentration of point defects at the ITO-GaN interface is suggested to be responsible for the large observed leakage current of the ITO/n-GaN Schottky contacts. (c) 2006 American Institute of Physics.

Electrochemiluminescence-based DNA detection using guanine oxidation at electrostatic self-assembly of Ru(bpy)(3)(2+)-doped silica nanoparticles on indium tin oxide electrode

A Ru(bpy)(3)(2+)-doped silica nanoparticle-[Ru@Silica] modified indium tin oxide electrode was prepared by simple electrostatic self-assembly technique, and one-electron catalytic oxidation of guanine bases in double-strand and denatured DNA was realized using the electrochemiluminescence detection means.

Tris(2,2 '-bipyridyl) ruthenium(II) doped silica film modified indium tin oxide electrode and its electrochemiluminescent properties

An approach was reported to synthesize silica hybridized ruthenium bipyridyl complex through amidation reaction by covalent attachment of bis(bipyridyl)-4,4'-dicarboxy-2,2'-bipyridyl-ruthenium to (3-aminopropyl)-triethoxysilane. The hybrid complex then was gelatinized through acid catalytic hydrolysis method and a sol-gel modified indium, tin oxide electrode was prepared via spin coating technique. As prepared indium tin oxide electrode possesses good stability therein with excellent electrochemiluminescence behavior.

Sensitive biomimetic sensor based on molecular imprinting at functionalized indium tin oxide electrodes

We initially report an electrochemical sensing platform based on molecularly imprinted polymers (MIPs) at functionalized Indium Tin Oxide Electrodes (ITO). In this research, aminopropyl-derivatized organosilane aminopropyltriethoxysilane (APTES), which plays the role of functional monomers for template recognition, was firstly self-assembled on an ITO electrode and then dopamine-imprinted sol was spin-coated on the modified surface. APTES which can interact with template dopamine (DA) through hydrogen bonds brought more binding sites located closely to the surface of the ITO electrode, thus made the prepared sensor more sensitive for DA detection. Potential scanning is presented to extract DA from the modified film, thus DA can rapidly and completely leach out. The affinity and selectivity of the resulting biomimetic sensor were characterized using cyclic voltammetry (CV). It exhibited an increased affinity for DA over that of structurally related molecules, the anodic current for DA oxidation depended on the concentration of DA in the linear range from 2 x 10(-6) M to 0.8 x 10(-3) M with a correlation coefficient of 0.9927.In contrast, DA-templated film prepared under identical conditions on a bare ITO showed obviously lower response toward dopamine in solution.

Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

A bilayer CdS/ITO film was obtained. The dipped CdS was grown by an ultrasonic colloid deposition (USCD) method. Microstructure of the CdS film made by USCD has a wider transmission range and a higher transmittance. Amorphous indium-tin-oxide (ITO) thin film was deposited using d.c. magnetron-sputtering at room temperature. The ITO films exhibited good conductivity and maximum transmittance of 94%. The CdS/ITO bilayer was investigated by means of GIXD (grazing incidence X-ray diffraction) at different incidence angles (alpha = 0.20-5.00degrees) and XRD. We discuss a model for the thin bilayer film. SEM and AFM show that homogeneous CdS films with a bar-shaped ultrafine particles and ITO film with nanometer structure. The mechanism of the bilayer CdS/ITO film is discussed.

Formation and characterization of tin oxide aerogel derived from sol-gel process based on tetra(n-butoxy)tin(IV)

Transparent and translucent SnO2 aerogels with high specific surface area (>300m(2)/g) have been prepared by sol-gel process using tetra(n-butoxy)tin(IV) as a starting compound, and supercritical drying technique for solvent extraction. Light scattering measurements reveal that the polymeric cluster size distribution in sol system is gradually broadened during sol-gel transition. SEM images show that the aerogels are made up of the cottonlike oxide agglomerates with a large number of Pores. TEM images show that these aerogels seem to be self-similar at different magnifications. Their pore size distribution is pretty wide ranging, from mesopore to macropore especially for that of translucent aerogel. (C) 2004 Elsevier B.V. All rights reserved.

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

Electroluminescence afterglow from indium tin oxide/Si-rich SiO2/p-Si structure

Indium tin oxide/Si-rich SiO2/p-Si structured devices are fabricated to study the electroluminescence (EL) of the Si-rich SiO2 (SRO) material. The obvious peaks at similar to 1050nm and similar to 1260nm in the EL are ascribed to localized state transitions of amorphous Si (alpha-Si) clusters. The EL afterglow associated with alpha-Si clusters is observed from this structure at room temperature, while the afterglow is absent in the case of optical pumping. It is believed that carrier-induced defects act as trap centres in the alpha-Si clusters, resulting in the EL afterglow. The phenomenon of the EL afterglow indicates the limits of EL performance and electrical modulation of the SRO material with a larger fraction of alpha-Si clusters.

Photoluminescence behaviors from stoichiometric gadolinium oxide films

Stoichiometric gadolinium oxide thin films have been grown on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Gadolinium oxide shares Gd2O3 structures although the ratio of gadolinium and oxygen in the film is about 2:1 and a lot of oxygen deficiencies exist. Photoluminescence (PL) measurements have been carried out within a temperature range of 5-300 K. The detailed characters of the PL emission integrated intensity, peak position, and peak width at different temperature were reported and an anomalous photoluminescence behavior was observed. The character of PL emission integrated intensity is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. Four peaks relative to alpha band and beta band were observed also. Therefore we suggest that the nanoclusters with the oxygen deficiencies contribute to the PL emission and the model of singlet-triplet exchange splitting of exciton was employed for discussion. (C) 2003 American Institute of Physics.

360-nm Photoluminescence from Silicon Oxide Films Embedded with Silicon Nanocrystals

Si-rich silicon oxide films were deposited by RF magnetron sputtering onto composite Si/SiO2 targets. After annealed at different temperature, the silicon oxide films embedded with silicon nanocrystals were obtained. The photoluminescenee（PL） from the silicon oxide films embedded with silicon nanocrystals was observed at room temperature. The strong peak is at 360 nm, its position is independent of the annealing temperature. The origin of the 360-nm PL in the silicon oxide films embedded with silicon nanoerystals was discussed.

Polymeric fullerene oxide films produced by decomposition of hexanitro[60]fullerene

A new poly(fullerene oxide) thin film material has been fabricated by thermal activation and electron bombardment on hexanitro[60]fullerene (HNF) film deposited on a An substrate, all under vacuum conditions. The reaction products in the polymerization process are analyzed by XPS, UPS, IR, TGA-MS and LDI-MS techniques. It is found that the main effect of thermal and radiation treatments is to induce cleavage of -NO bonds from HNF molecules resulted in the release of nitric oxide gas and the formation of fullerene-bound oxyradicals, C-60-C-6. Spectroscopic evidence strongly suggests that rearrangement of fullerenic nitro moieties into nitrito groups is involved in the HNF decomposition process prior to the generation of reactive oxyradical intermediates. Consequently, the intermolecular coupling reaction of these oxyradicals leads to carbon polymer networks containing oxygen-bridged fullerenes. The thermally generated polymeric thin film is stable up to 900 K. Electron bombardment is also effective in both the decomposition of -NO2 groups and the removal of -OH groups present in HNF films. UV irradiation at 365 nm alone is shown to be not as efficient for the polymer formation. (C) 2003 Elsevier Ltd. All rights reserved.

The modification of self-assembled monolayer on indium tin oxide as cathode in inverted bottom-emitting organic light-emitting diodes

Self-assembled monolayers (SAMs) of a series of p-substituted benzoyl chlorides were formed on indium tin oxide as the cathode for the fabrication of inverted bottom-emitting organic light-emitting diodes (IBOLEDs). The studies on the efficiency of electron injection and device performances showed that the direct tunneling of electron and the formation of dipole associated with the monolayer-forming molecule lead to significant enhancement in electron injection. Consequently, the device efficiency is greatly improved.