Trapping of neutral Rb-87 atoms on an atomchip

We report an experiment of trapping of neutral Rb-87 atoms on a, self-made atomchip. The H-shaped atomchip is made by magnetron sputtering technology, which is different from the atomchip technology of other teams. We collect 3 x 10(6) Rb-87 atoms in the mirror magneto-optical trap (MOT) using the external MOT coils, and 1 X 10(5) Rb-87 atoms are transferred to U-MOT using U-shaped wire in chip and a pair of bias coils.

Coherent spectroscopy of the Rb-87 Fg=1 -> F-e=0 closed transition

This paper has observed linewidth narrowing of dark states in rubidium cell by using the Hanle configuration. The reduction of the coherent resonance width under the transition of Rb-87 F-g = 1 -> F-e = 0 is observed and the qualitative explanation about its mechanism is presented. Multiple subnatural width dips are obtained with a linearly polarized laser beam for the transition of Rb-87 F-g = 0, 1, 2. The feature of negative and positive slope, namely dispersionlike feature, is observed in the transmitted light.

Parametric excitation of Rb-87 atoms in a quadrupole-Ioffe-configuration trap

We have experimentally studied the parametric excitation of Rb-87 atoms in a quadrupole-Ioffe-configuration trap. The temperature of an atomic cloud and number of trapped atoms versus time and modulation frequency of the parametric excitation field have been measured. We also noticed that the contribution of atomic collisions to the energy distributions can not be ignored in the case of weak excitation, which results in a lower temperature of the atomic cloud than by Gehm [Phys. Rev. A 58, 3914 (1998)] predicted.

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

Pr掺杂对Ce_(0.87)Sm_(0.13)O_(2-δ)结构及电性能的影响

采用溶胶-凝胶法合成Ce0.87Sm0.13-xPrxO2-δ(x=0.00,0.01,0.02)氧化物,通过X射线衍射、拉曼光谱、场发射扫描电镜对氧化物进行结构表征,利用交流阻抗谱测试电性能,并讨论了掺杂Pr对Ce0.87Sm0.13O2-δ微观结构和电性能的影响.结果表明,掺入少量Pr3+可减少或消除晶粒表面和晶界处的坑痕或孔隙,增加材料的致密性,从而降低材料的晶界电阻和电极界面电阻以及晶界电阻在总电阻中所占的比例,提高了材料的电导率.