Resting metabolism and heat increment of feeding in mandarin fish (Siniperca chuatsi) and Chinese snakehead (Channa argus)

Resting metabolism was measured in immature mandarin fish Siniperca chuatsi weighing 42.1-510.2 g and Chinese snakehead Channa argus weighing 41.5-510.3 g at 10, 15, 20, 25, 30 and 35 degreesC. Heat increment of feeding was measured in mandarin fish weighing 202.0 (+/-14.0) g and snakehead weighing 200.8 (+/-19.3) g fed swamp leach Misgurnus anguillicaudatus at 1% body weight per day at 28 degreesC. In both species, weight exponent in the power relationship between resting metabolism and body weight was not affected by temperature. The relationship between resting metabolism and temperature could be described by a power function. The temperature exponent was 1.39 in mandarin fish and 2.10 in snakehead (P < 0.05), indicating that resting metabolism in snakehead increased with temperature at a faster rate than in mandarin fish. Multiple regression models were used to describe the effects of body weight (W, g) and temperature (T, C) on the resting metabolism (R-s, mg O-2/h): In R-s = - 5.343 + 0.772 In W + 1.387 In T for the mandarin fish and In R-s = -7.863 + 0.801 ln W + 2.104 In T for the Chinese snakehead. The proportion of food energy channelled to heat increment was 8.7% in mandarin fish and 6.8% in snakehead. (C) 2000 Elsevier Science Inc. All rights reserved.

Silicon doping induced increment of quantum dot density

Low-indium-content self-assembled InGaAs/GaAs quantum dots (SAQD) were grown using solid-source molecular beam epitaxy (MBE) and investigated by atomic force microscopy and photoluminescence (PL) spectroscopy. Silicon, which was doped at different quantum dot (QD) growth stages, markedly increased the density of QD. We obtained high density In0.35Ga0.65As/GaAs(001) quantum dots of 10(11)/cm(2) at a growth temperature of 520degreesC. PL spectra and distribution statistics show the high quality and uniformity of our silicon-doped samples. The density increment can be explained using the lattice-hardening mechanism due to silicon doping.