Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes

We have investigated the transient electroluminescence (EL) onset of the double-layer light-emitting devices made from poly(N-vinylcarbozole) (PVK) doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris(8-hydroxy-quinoline) aluminium (Alq(3)). For the double-layered device in which PVK was doped with 0.1 wt% DCJTB, the EL onset of PVK lags that of DCJTB and Alq(3), while the EL onset of DCJTB and Alq(3) is simultaneous. However, the EL emission of the double-layered device of PVK/Alq(3) originates only from Alq(3). The results show that DCJTB dopants can not only help to tunnel electrons from Alq(3) zone to PVK but can also assist electrons transfer in PVK under high electric field by hopping between DCJTB molecules or from DCJTB to PVK sites at a low doping concentration of 0.1 wt%. When the DCJTB doping concentration is 4.0 wt%, the EL onset of Alq(3) lags that of DCJTB. The difference in the EL onsets of DCJTB, Alq(3) and PVK is attributed to the slow build-up of the internal space charge in the vicinity of the interface between PVK and Alq(3). The electron potential difference of the interface between Alq(3) and PVK doped by DCJTB can be adjusted by changing the DCJTB doping concentration in double-layer devices.

有机半导体中载流子迁移率的测量方法

本文简要地介绍了有机半导体中载流子迁移率的几种模型,着重阐述了测量有机半导体中载流子迁移率的各种方法的测试原理。主要有如下几种:稳态(CW)直流电流-电压特性法(steady-state DC JV),飞行时间法(time of flight,TOF),瞬态电致发光法(transient electroluminescence,transient EL),瞬态电致发光法的修正方法即双脉冲方波法和线性增压载流子瞬态法(carrier extraction by linearly increasing voltage,CELIV),暗注入空间电荷限制电流(dark injection space charge limited current,DI SCLC),场效应晶体管方法(field-effect transistor,FET),时间分辨微波传导技术(time-resolved microwave conductivity technique,TRMC),电压调制毫米波谱(voltage-modulated millimeter-wave spectroscopy,VMS)光诱导瞬态斯塔克谱方法(photoi...

Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes

The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-quinolinolato) aluminum (Alq(3)) on the charge carrier transport in Alq(3):DCJTB was investigated by measuring the steady current-voltage characteristics and the transient electroluminescence. The dopant concentration dependence of the current-voltage relationship clearly indicates the carrier trapping by the DCJTB molecule. The DCJTB concentration significantly affects the electron mobility in Alq(3):DCJTB. The mobility has a nontrivial dependence on the doping level. For relatively low doping levels, less than 1%, the electron mobility of Alq(3):DCJTB decreases with the doping level. An increasing mobility is then observed if the dopant concentration is further increased, followed by a decrease for doping levels larger than similar to2%. The change of the electron mobility with the DCJTB concentration in Alq(3) is attributed to the additional energetic disorder due to potential fluctuations caused by the dipole-dipole interaction of random distribution dopant at the relatively low doping concentration, and to the phase separation at the high doping concentration.

Modeling of organic light-emitting diodes with graded concentration in the emissive multilayer

We model the electrical behavior of organic light-emitting diodes whose emissive multilayer is formed by blends of an electron transporting material, tris-(8-hydroxyquinoline) aluminum (Alq(3)) and a hole transporting material, N,N-'-diphenyl-N,N-'-bis(1,1(')-biphenyl)-4,4-diamine. The multilayer is composed of layers of different concentration. The Alq(3) concentration gradually decreases from the cathode to the anode. We demonstrate that these graded devices have higher efficiency and operate at lower applied voltages than devices whose emissive layer is made of nominally homogeneous blends. Our results show an important advantage of graded devices, namely, the low values of the recombination rate distribution near the cathode and the anode, so that electrode quenching is expected to be significantly suppressed in these devices.

Effect of dye-doped concentration on the charge carrier recombination in molecularly doped organic light-emitting devices

The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl- 9-enyl)-4H-pyran(DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq(3)) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient (gamma) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

A dinuclear aluminum 8-hydroxyquinoline complex with high electron mobility for organic light-emitting diodes

A dinuclear aluminum 8-hydroxyquinoline complex (DAlq(3)) with improved electron mobility was designed for organic light-emitting diodes. The electron mobility in DAlq(3) was determined via transient electroluminescence (EL) from bilayer devices with structure of indium tin oxide (ITO)/N,N-'-di(naphthalene-1-yl)-N,N-'-diphenyl-benzidine (NPB)/DAlq(3)/Mg:Ag. It was found that the electron mobility in DAlq(3) is between 3.7-8.4x10(-6) cm(2)/Vs at electric fields ranging between 1.2x10(6) and 4.0x10(6) V/cm, which is a factor of two higher than that in Alq(3). The DAlq(3) also shows a higher EL efficiency of 2.2 cd/A (1.2 Lm/W), as compared to Alq(3) with an EL efficiency of 2.0 cd/A (1.0 Lm/W), which is attributed to more balanced electron and hole recombination due to the improved electron mobility of DAlq(3).

Electroluminescence of hole block material caused by electron accumulation and hole penetration

In this study, we investigated the electroluminescence (EL) mechanisms and processes of hole block material in the multilayer devices with Eu(TTA)(3)phen (TTA = thenoyltrifluoroacetone, phen = 1,10-phenanthroline) doped CBP (4,4'-N,N'-dicarbazolebiphenyl) as the light-emitting layer (EML). First, the hole block ability of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was experimentally confirmed by comparing the EL spectra. With increasing hole injection, BCP emission emerges and increases gradually due to the increasing hole penetration from EML into the hole block layer (HBL).

Numerical Simulation of Transient Thermal Field and Residual Stress in Laser Melting Process

以激光熔凝表面强韧化处理为背景,应用空间弹塑性有限单元和高精度数值算法同时考虑材料组织性能的变化模拟工件的温度场及残余应力,研究激光熔凝加工中瞬时温度场及残余应力数值模拟,同时考虑相变潜热及相变塑性的影响,用算例验证了模型的正确性,给出了不同时刻温度场分布及残余应力分布。

Numerical Simulation of Transient Thermal Features in the Remelting Processing of Stainless Steel

应用有限元方法对层流等离子体射流不锈钢表面重熔工艺中的瞬态热物理现象进行了数值模拟研究.针对不同加热距离,确定了材料熔化和凝固过程中的瞬态温度场、温度梯度和凝固率的时间和空间分布特征.通过引入等效温度面积密度概念,研究了不锈钢重熔热处理的适合条件.结果表明,9～13mm的范围是较为适宜的加热距离,该结果与试验观察基本符合.

Theory and Application of the Transient Injection Well Test

Based on the theory of the pumping well test, the transient injection well test was suggested in this paper. The design method and the scope of application are discussed in detail. The mathematical models are developed for the short-time and long-time transient injection test respectively. A double logarithm type curve matching method was introduced for analyzing the field transient injection test data. A set of methods for the transient injection test design, experiment performance and data analysis were established. Some field tests were analyzed, and the results show that the test model and method are suitable for the transient injection test and can be used to deal with the real engineering problems.

Non-Linear Wave-Induced Transient Response of Soil Around a Trenched Pipeline

Submarine pipelines are always trenched within a seabed for reducing wave loads and thereby enhancing their stability. Based on Biot’s poroelastic theory, a two-dimensional finite element model is developed to investigate non-linear wave-induced responses of soil around a trenched pipeline, which is verified with the flume test results by Sudhan et al. [Sudhan, C.M., Sundar, V., Rao, S.N., 2002. Wave induced forces around buried pipeline. Ocean Engineering, 29, 533–544] and Turcotte et al. [Turcotte, B.R., Liu, P.L.F., Kulhawy, F.H., 1984. Laboratory evaluation of wave tank parameters for wave-sediment interaction. Joseph H. Defree Hydraulic Laboratory Report 84-1, School of Civil and Environmental Engineering, Cornell University]. Non-linear wave-induced transient pore pressure around pipeline at various phases of wave loading is examined firstly. Unlike most previous investigations, in which only a single sediment layer and linear wave loading were concerned, in this study, the influences of the non-linearity of wave loading, the physical properties of backfill materials and the geometry profile of trenches on the excess pore pressures within the soil around pipeline, respectively, were explored, taking into account the in situ conditions of buried pipeline in the shallow ocean zones. Based on the parametric study, it is concluded that the shear modulus and permeability of backfill soils significantly affect the wave-induced excess pore pressures around trenched pipeline, and that the effect of wave non-linearity becomes more pronounced and comparable with that of trench depth, especially at high wave steepness in shallow water.

Numerical Solutions for the Transient Flow in the Homogenous Closed Circle Reservoirs

There are many fault block fields in China. A fault block field consists of fault pools. The small fault pools can be viewed as the closed circle reservoirs in some case. In order to know the pressure change of the developed formation and provide the formation data for developing the fault block fields reasonably, the transient flow should be researched. In this paper, we use the automatic mesh generation technology and the finite element method to solve the transient flow problem for the well located in the closed circle reservoir, especially for the well located in an arbitrary position in the closed circle reservoir. The pressure diffusion process is visualized and the well-location factor concept is first proposed in this paper. The typical curves of pressure vs time for the well with different well-location factors are presented. By comparing numerical results with the analytical solutions of the well located in the center of the closed circle reservoir, the numerical method is verified.

Numerical Simulation of Transient Thermal Field in Laser Melting Process

Numerical simulation of thermal field was studied in laser processing. The 3-D finite element model of transient thermal calculation is given by thermal conductive equation. The effects of phase transformation latent are considered. Numerical example is given to verify the model. Finally the real example of transient thermal field is given.

The Pressure Transient Analysis Of Deformation Of Fractal Medium

The assumption of constant rock properties in pressure-transient analysis of stress-sensitive reservoirs can cause significant errors in the estimation of temporal and spatial variation of pressure. In this article, the pressure transient response of the fractal medium in stress-sensitive reservoirs was studied by using the self-similarity solution method and the regular perturbation method. The dependence of permeability on pore pressure makes the flow equation strongly nonlinear. The nonlinearities associated with the governing equation become weaker by using the logarithm transformation. The perturbation solutions for a constant pressure production and a constant rate production of a linear-source well were obtained by using the self-similarity solution method and the regular perturbation method in an infinitely large system, and inquire into the changing rule of pressure when the fractal and deformation parameters change. The plots of typical pressure curves were given in a few cases, and the results can be applied to well test analysis.

Thermal fatigue on pistons induced by shaped high power laser. Part I: Experimental study of transient temperature field and temperature oscillation

Thermal fatigue behavior is one of the foremost considerations in the design and operation of diesel engines. It is found that thermal fatigue is closely related to the temperature field and temperature fluctuation in the structure. In this paper, spatially shaped high power laser was introduced to simulate thermal loadings on the piston. The incident Gaussian beam was transformed into concentric multi-circular beam of specific intensity distribution with the help of diffractive optical element (DOE), and the transient temperature fields in the piston similar to those under working conditions could be achieved by setting up appropriate loading cycles. Simulation tests for typical thermal loading conditions, i.e., thermal high cycle fatigue (HCF) and thermal shock (or thermal low cycle fatigue, LCF) were carried out. Several important parameters that affect the transient temperature fields and/or temperature oscillations, including controlling mode, intensity distribution of shaped laser, laser power, temporal profile of laser pulse, heating time and cooling time in one thermal cycle, etc., were investigated and discussed. The results show that as a novel method, the shaped high power laser can simulate thermal loadings on pistons efficiently, and it is helpful in the study of thermal fatigue behavior in pistons. (C) 2007 Elsevier Ltd. All rights reserved.