Refractive index and thickness analysis of natural silicon dioxide film growing on silicon with variable-angle spectroscopic ellipsometry

The refractive index and thickness of SiO2 thin films naturally grown on Si substrates were determined simultaneously within the wavelength range of 220-1100 nm with variable-angle spectroscopic ellipsometry. Different angles of incidence and wavelength ranges were chosen to enhance the analysis sensitivity for more accurate results. Several optical models describing the practical SiO2-Si system were investigated, and best results were obtained with the optical model, including an interface layer between SiO2 and Si, which proved the existence of the interface layer in this work as described in other publications.

Plane strain problem of growing crack for a perfectly plastic solid

In this paper, fundamental equations of the plane strain problem based on the 3-dimensional plastic flow theory are presented for a perfectly-plastic solid The complete governing equations for the growing crack problem are developed. The formulae for determining the velocity field are derived.The asymptotic equation consists of the premise equation and the zero-order governing equation. It is proved that the Prandtl centered-fan sector satisfies asymptotic equation but does not meet the needs of hlgher-order governing equations.

Fast growing mode of stimulated Raman scattering in a pure three-wave process

Stimulated Raman scattering (SRS) of a relativistic laser in plasmas is studied in the framework of the standard equation set of a three-wave process. As far as every wave involved in the process is concerned, its evolution has two aspects: time-dependent amplitude and time-dependent frequency. These two aspects affect each other. Strict analysis and numerical experiment on the full three-wave equation set reveal that a fast growing mode of the instability, which could reach a balance or saturation point during a period far shorter than an estimation based on conventional analysis, could take place in a standard three-wave process without coupling with a fourth wave. This fast growing mode is found to stem from the constraint set by the background density on the amplitude of the driven Langmuir wave. The effect of various parameters on the development of the SRS instability is studied by numerical calculation of the history of the instability in different cases. (c) 2007 American Institute of Physics.