Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy

In situ doping for growth of n-p-n Si/SiGe/Si heterojuction bipolar transistor (HBT) structural materials in Si gas source molecular beam epitaxy is investigated. We studied high n-type doping kinetics in Si growth using disilane and phosphine, and p-type doping in SiGe growth using disilane, soild-Ge, and diborane with an emphasis on the effect of Ge on B incorporation. Based on these results, in situ growth of n-p-n Si/SiGe/Si HBT device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by X-ray diffraction, and spreading resistance profiling analysis. (C) 2000 Elsevier Science B.V. All rights reserved.

Rapid thermal annealing of arsenic implanted Si1-xGex epilayers

Rapid thermal annealing of arsenic implanted Si1-xGex was studied by secondary ion-mass spectroscopy (SIMS) and spreading resistance probe (SRP) over a wide range of Ge fractions (0-43%). Redistribution of the implanted arsenic was followed as a function of Ge content and annealing temperature. Arsenic concentration profiles from SIMS indicated that the behavior of implanted arsenic in Si1-xGex after RTA was different from that in Si, and the Si1-xGex samples exhibited box-shaped, concentration-dependent diffusion profiles with increasing Ge content. The maximum concentrations of electrically active arsenic in Si1-xGex was found to decrease with increasing Ge content. Experimental results showed that the arsenic diffusion is enhanced with increasing temperature for certain Ge content and strongly dependent on Ge content, and the higher Ge content, the faster As diffusion.

Growth of cationic lipid toward bilayer, lipid membrane by solution spreading: scanning probe microscopy study

The growth of cationic lipid dioctadecyldimethylammonium bromide (DODAB) toward bilayer lipid membrane (BLM) by solution spreading on cleaved mica surface was studied by atomic force microscopy (AFM). Bilayer of DODAB was formed by exposing mica to a solution of DODAB in chloroform and subsequently immersing into potassium chloride solution for film developing. AFM studies showed that at the initial stage of the growth, the adsorbed molecules exhibited the small fractal-like aggregates. These aggregates grew up and expanded laterally into larger patches with time and experienced from monolayer to bilayer, finally a close-packed bilayer film (5.4 +/- 0.2 nm) was approached. AFM results of the film growth process indicated a growth mechanism of nucleation, growth and coalescence of dense submonolayer, it revealed the direct information about the film morphology and confirmed that solution spreading was an effective technique to prepare a cationic bilayer in a short time.

A thin liquid film and its effects in an atomic force microscopy measurement

Recently, it has been observed that a liquid film spreading on a sample surface will significantly distort atomic force microscopy (AFM) measurements. In order to elaborate on the effect, we establish an equation governing the deformation of liquid film under its interaction with the AFM tip and substrate. A key issue is the critical liquid bump height y(0c) at which the liquid film jumps to contact the AFM tip. It is found that there are three distinct regimes in the variation of y(0c) with film thickness H, depending on Hamaker constants of tip, sample and liquid. Noticeably, there is a characteristic thickness H* physically defining what a thin film is; namely, once the film thickness H is the same order as H* , the effect of film thickness should be taken into account. The value of H* is dependent on Hamaker constants and liquid surface tension as well as tip radius.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.

Analysis of lateral current spreading in solar cell devices by spatially-resolved electroluminescence

Spatially-resolved electroluminescence (EL) images from solar cells contain information of local current distribution. By theoretical analysis of the EL intensity distribution, the current density distribution under a certain current bias and the sheet resistance can be obtained quantitatively. Two-dimensional numerical simulation of the current density distribution is employed to a GaInP cell, which agrees very well with the experimental results. A reciprocity theorem for current spreading is found and used to interpret the EL images from the viewpoint of current extraction. The optimization of front electrodes is discussed based on the results. (C) 2010 American Institute of Physics. [doi:10.1063/1.3431390]

Mass transfer resistance in the production of high impact polypropylene

Mass transfer resistance in the production of high impact polypropylene (hiPP) produced by a two-stage slurry/gas polymerization was investigated by field-emission scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. It is found that the formation of ethylene-propylene copolymer (EPR) phases in polypropylene (iPP) particle produced in the first stage slurry polymerization exhibits a developing process from exterior to interior

Length dependence of electron conduction for oligo(1,4-phenylene ethynylene)s: A conductive probe-atomic force microscopy investigation

The dependence of electron conduction of oligo(1,4-phenylene ethynylene)s (OPEs) on length, terminal group, and main chain structure was examined by conductive probe-atomic force microscopy (CP-AFM) via a metal substrate-molecular wire monolayer-conductive probe junction. The electron transport in the molecular junction was a highest occupied molecule orbital (HOMO)-mediated process following a coherent, non-resonant tunneling mechanism represented by the Simmons equation.

Surface potential images of polycrystalline organic semiconductors obtained by Kelvin probe force microscopy

P-type copper phthalocyanine (CuPc) and n-type hexadecafluorophthalocyanina-tocopper (F16CuPc) polycrystalline films were investigated by Kelvin probe force microscopy (KPFM). Topographic and corresponding surface potential images are obtained simultaneously. Surface potential images are related with the local work function of crystalline facets and potential barriers at the grain boundaries (GBs) in organic semiconductors. Based on the spatial distribution of surface potential at GBs, donor- and acceptor-like trapping states in the grain boundaries (GBs) of p-CuPc and n-F16CuPc films are confirmed respectively.

Lanthanum zirconate nanofibers with high sintering-resistance

The PVP/lanthanum nitrate/zirconium oxychloride (PVP-precursor) nanofiber was prepared by electrospinning technique. Lanthanum zirconate (La2Zr2O7, LZ) in the nanofiber is formed after calcination at 800 degrees C and the nanofiber with pyrochlore structure and a diameter of 100-500 nm can be obtained by calcination of the above precursor fiber at 1000 degrees C for 12 h. The surface of the fiber is rough but the continuous microstructure is still maintained after calcination. LZ fibers stack randomly, resulting in a structure with a low contact area between the fibers. This special structure makes the fiber to have a high resistance to sintering at elevated temperatures. The BET (Brunauer-Emmett-Teller) specific surface areas of the LZ fiber and powder calcined at different temperatures are shown in this paper, and the fiber was characterized by TG-DTA (thermal gravimetry-differential thermal analysis), XRD (X-ray diffraction), N-2 absorption-desorption porosimetry and SEM (scanning electron microscopy).

Effect of ambient pressure and radiation reabsorption of atmosphere on the flame spreading over thermally thin combustibles in microgravity

For the flame spread over thermally thin combustibles in an atmosphere, if the atmosphere cannot emit and absorb the thermal radiation (e.g. for atmosphere Of O-2-N-2), the conductive heat transfer from the flame to the fuel surface dominates the flame spread at lower ambient atmosphere. As the ambient pressure increases, the flame spread rate increases, and the radiant heat transfer from the flame to the fuel surface gradually becomes the dominant driving force for the flame spread. In contrast, if the atmosphere is able to emit and absorb the thermal radiation (e.g. for atmosphere Of O-2-CO2), at lower pressure, the heat transfer from flame to the fuel surface is enhanced by the radiation reabsorption of the atmosphere at the leading edge of the flame, and both conduction and thermal radiation play important roles in the mechanism of flame spread. With the increase in ambient pressure, the oxygen diffuses more quickly from ambient atmosphere into the flame, the chemical reaction in the flame is enhanced, and the flame spread rate increases. When the ambient pressure is greater than a critical value, the thermal radiation from the flame to the solid surface is hampered by the radiation reabsorption of ambient atmosphere with the further increase in ambient pressure. As a result, with the increase in ambient pressure, the flame spread rate decreases and the heat conduction gradually dominates the flame spread over the fuel surface.

Microstructure and wear resistance of in situ TiCp composite coating by laser cladding

A new in situ method was realized by one step laser cladding to produce Ni-base alloy composite coating reinforced by in situ reacted and gradiently distributed TiCp particles. The submicron TiCp particles were formed and uniformly distributed because of the in situ reaction and trapping effect under the rapid solidification condition. And, TiCp particles were of gradient distribution on a macro scale and their volume fraction increased from 1.86% at the layer/substrate interface to a maximum 38.4% at the surface of the layer. Furthermore, the in situ generated TiCp/gamma-Ni interfaces were free from deleterious surface reactions. Additionally, the clad coating also revealed a high microhardness of gradient variation with the layer depth and the superior abrasive wear resistance.

Application of Electrical Resistance Tomography System to Monitor Gas/Liquid Two-Phase Flow in a Horizontal Pipe

The Electrical Resistance Tomography (ERT) technique possesses great potential in monitoring widely exiting industrial two/multi-phase flow. For vertical pipe flow and inclined pipe flow, some application studies with exciting results have been reported, but there is rarely a paper regarding the application of ERT to horizontal gas/liquid pipe flow. This paper addresses this issue and proposes a smart method, Liquid Level Detection method, to conventional ERT system. The enhanced ERT system using the new method can monitor horizontal pipe flow effectively and its application is no longer restricted by the flow conditions. Some experimental results from monitoring an air/water slug pipe flow are presented.

Effects of La2O3 on Microstructure and Wear Properties of Laser Clad gamma/Cr7C3/TiC Composite Coatings on TiAl Intermatallic Alloy

The effects of La2O3 addition on the microstructure and wear properties of laser clad gamma/C(r)7C(3)/TiC composite coatings on gamma-TiAl intermetallic alloy substrates with NiCr-Cr3C2 precursor mixed powders have been investigated by optical microscopy (OM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy-dispersive spectrometer (EDS) and block-on-ring wear tests. The responding wear mechanisms are discussed in detail. The results are compared with that for composite coating without La2O3. The comparison indicates that no evident new crystallographic phases are formed except a rapidly solidified microstructure consisting of the primary hard Cr7C3 and TiC carbides and the gamma/Cr7C3 eutectics distributed in the tough gamma nickel solid solution matrix. Good finishing coatings can be achieved under a proper amount of La2O3-addition and a suitable laser processing parameters. The additions of rare-earth oxide La,03 can refine and purify the microstructure of coatings, relatively decrease the volume fraction of primary blocky Cr7C3 to Cr7C3/gamma eutectics, reduce the dilution of clad material from base alloy and increase the microhardness of the coatings. When the addition of La2O3 is approximately 4 wt.%, the laser clad composite coating possesses the highest hardness and toughness. The composite coating with 4 wt.%La2O3 addition can result the best enhancement of wear resistance of about 30%. However, too less or excessive addition amount of La2O3 have no better influence on wear resistance of the composite coating.