15 resultados para Smart Spaces
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
In this paper, we study some degenerate parabolic equation with Cauchy-Dirichlet boundary conditions. This problem is considered in little Holder spaces. The optimal regularity of the solution v is obtained and is specified in terms of those of the second member when some conditions upon the Holder exponent with respect to the degeneracy are satisfied. The proofs mainly use the sum theory of linear operators with or without density of domains and the results of smoothness obtained in the study of some abstract linear differential equations of elliptic type.
Resumo:
More and more piezoelectric materials and structures have been used for structure control in aviation and aerospace industry. More efficient and convenient computation method for large complex structure with piezoelectric actuation devices is required. A load simulation method of piezoelectric actuation is presented in this paper. By this method, the freedom degree of finite element simulation is significantly reduced, the difficulty in defining in-plane voltage for multi-layers piezoelectric composite is overcome and the transfer computation between material main direction and the element main direction is simplified. The concept of simulation load is comprehensible and suitable for engineers of structure strength in shape and vibration control, thereby is valuable for promoting the application of piezoelectric material and structures in practical aviation and aerospace fields.
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This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SEs). The logic gates are based on MOSFET based SE turnstiles that can accurately transfer SEs with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish MV logic operations. First, we build arbitrary MV literal gates by using pairs of SE turnstiles. Then, we propose universal MV logic-to-value conversion gates and MV analog-digital conversion circuits. We propose a SPICE model to describe the behavior of the MOSFET based SE turnstile. We simulate the performances of the proposed gates. The MV logic gates have small number of transistors and low power dissipations.
Resumo:
Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at chi(c) = 50% to 2.1 at chi(c) = 90%. Furthermore, the relationship between n and rho for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter gamma is determined to be 2.05.
Resumo:
The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transferring electrons in both real and k spaces through resonant Gamma - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.
Resumo:
Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.
Resumo:
This paper proposes a smart frequency presetting technique for fast lock-in LC-PLL frequency synthesizer. The technique accurately presets the frequency of VCO with small initial frequency error and greatly reduces the lock-in time. It can automatically compensate preset frequency variation with process and temperature. A 2.4GHz synthesizer with 1MHz reference input was implemented in 0.35 mu m CMOS process. The chip core area is 0.4mm(2). Output frequency of VCO ranges from 2390 to 2600MHz. The measured results show that the typical lock-in time is 3 mu s. The phase noise is -112dBc/Hz at 600KHz offset from center frequency. The test chip consumes current of 22mA that includes the consumption of the I/O buffers.
Resumo:
Password authentication has been adopted as one of the most commonly used solutions in network environment to protect resources from unauthorized access. Recently, Lee–Kim–Yoo [S.W. Lee, H.S. Kim, K.Y. Yoo, Improvement of Chien et al.'s remote user authentication scheme using smart cards, Computer Standards & Interfaces 27 (2) (2005) 181–183] and Lee-Chiu [N.Y. Lee, Y.C. Chiu, Improved remote authentication scheme with smart card, Computer Standards & Interfaces 27 (2) (2005) 177–180] respectively proposed a smart card based password authentication scheme. We show that these two schemes are both subject to forgery attacks provided that the information stored in the smart card is disclosed by the adversary. We also propose an improved scheme with formal security proof.
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于2010-11-23批量导入
Resumo:
于2010-11-23批量导入
Resumo:
The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.
Resumo:
Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.
Resumo:
We have demonstrated a smart polymeric transducer and aptamer/intercalating dye system that allows the label-free detection of protein with high sensitivity and selectivity.
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A smart biodegradable cationic polymer (CBA-PEI) based on the disulfide bond-containing cross-linker cystamine bisacrylamide (CBA) and low molecular weight branched polyethylenimine (1800-Da, PEI1800) was successfully synthesized by Michael addition reaction in our recent study. Furthermore, a series of copolymers (CBA-PEI-PEG) with different PEGylation degree were obtained by the mPEG-SPA (5000-Da) reacting with CBA-PEI at various weight ratios directly. The molecular structures of the resulting polymers CBA-PEI and CBA-PEI-PEG were evaluated by nuclear magnetic resonance spectroscopy (H-1-NMR) and capillary viscosity measurements, all of which had successfully verified formation of the copolymers. The polymer/DNA complexes based on CBA-PEI and CBA-PEI-PEG were measured by dynamic light scattering and gel retardation assay. The results showed that the particle size and zeta potential of complexes were reduced with increasing amount of PEG grafting, even no particle formation. The particle size of CBA-PEI/DNA complexes was in range of 103.1 to 129.1 nm, and the zeta potential was in range of 14.2 to 24.3 mV above the 2:1 weight ratio. In the same measure condition, the particle size of CBA-PEI-PEG complexes was reduced to a range of 32.2 to 55 nm, and the zeta potential was in range of 9.3 to 13.8 mV at the 2:1 weight ratio.