Effect of temperature on implant isolation characteristics of AlGaAs/GaAs multilayer heterojunction structure

Thermally stable high-resistivity regions have been formed using hydrogen ion implantation at three energies (50, 100, and 180 keV) with three corresponding doses (6 X 10(14) 1.2 X 10(15), and 3 X 10(15) cm(-2)), oxygen implantation at 280keV with 2 X 10(14) cm(-2) as well as subsequent annealing at about 600 degrees C for 10-20s, in AlGaAs/GaAs multiple epitaxial heterojunction structure. After anncaling at 600 degrees C, the sheet resistivity increases by six orders more of magnitude from the as-grown values. This creation of high resistivity is different from that of the conventional damage induced isolation by H or O single implantation which becomes ineffective when anneal is carried out at 400-600 degrees C and the mechanism there of is discussed.

Measuring Receptor/Ligand Interaction at the Single-Bond Level: Experimental and Interpretative Issues

There is increased interest in measuring kinetic rates, lifetimes, and rupture forces of single receptor/ligand bonds. Valuable insights have been obtained from previous experiments attempting such measurements. However, it remains difficult to know with sufficient certainty that single bonds were indeed measured. Using exemplifying data, evidence supporting single-bond observation is examined and caveats in the experimental design and data interpretation are identified. Critical issues preventing definitive proof and disproof of single-bond observation include complex binding schemes, multimeric interactions, clustering, and heterogeneous surfaces. It is concluded that no single criterion is sufficient to ensure that single bonds are actually observed. However, a cumulative body of evidence may provide reasonable confidence. 0 2002 Biomedical Engineering Society.

Nonlinear Analysis of Submarine Pipelines During Single Point Lifting

基于管道微单元体平衡建立了海管单点提升的非线性力学模型的控制微分方程组,使用变弧长的无量纲代换将动边界问题化为固定边界的两点边值问题,利用maple环境下编制的两点边值问题的打靶法程序得到了该问题在各个提升阶段的数值解答和在单点提升过程中管道的极限弯矩约为0.71q~{1/3}(EI)~{2/3}。

Depth dependence of nanohardness in a CuAlNi single crystal shape memory alloy

Instrumented nanoindentation was employed to study the depth dependence of nanohardness in a CuAlNi single crystal shape memory alloy that exhibits shape memory effect (SME). A Berkovich indenter and a cube comer indenter were used in this study, and the

Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition

Bulk single crystals b-FeSi2, as a new photoelectric and thermoelectric material, has been successfully grown using chemical vapor transport technique by using iodine as transport agent in a sealed ampoule. The effects of crystal growth condition on quality and morphologies of the single crystals were studied. Both needle-like and grain-like single crystals were gained. By changing substrate temperature, tetrahedral high quality a-FeSi2 single crystals were also obtained.

Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method

A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method. The composite structure of the growing SiC crystal and graphite lid is considered in the model. The thermal expansion match between the crucible lid and SiC crystal is studied for the first time. The influence of thermal stress on the dislocation density and crystal quality is discussed.