SHORT PERIOD InAs/GaSb SUPERLATTICE INFRARED DETECTOR ON GaAs SUBSTRATES

Two type II superlattices (SLs) InAs(2ML)/GaSb(8ML) and InAs(8ML)/GaSb(8ML) were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the periods of the two SLs were 31.2 angstrom and 57.3 angstrom, respectively. Room-temperature optical transmittance spectra showed that there were clear absorption edges at 2.1 mu m and 5 mu m for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The spectral response and blackbody tests were carried out at low and room temperatues. The results show that the 50% cutoff wavelengths of the two photoconductors are 2.1 mu m and 5.0 mu m respectively and D-bb* is above 2 x 10(8) cmHz(1/2)/W for two kinds of photoconductors at 77K. D-bb* is above 10(8) cmHz(1/2)/W for SWIR photoconductor at room temperature.

Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates

Type II superlattices (SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched GaAs substrates and on GaSb substrates. A smooth GaSb epilayer was formed on GaAs substrates by inserting mulit-buffer layers including an interfacial misfit mode AlSb quantum dot layer and AlSb/GaSb superlattices smooth layer. SLs grown on GaAs substrates (GaAs-based SLs) showed well-resolved satellite peaks in XRD. GaSb-based SLs with better structural quality and smoother surface showed strong photoluminescence at 2.55 mu m with a full width at half maximum (FWHM) of 20 meV, narrower than 31 meV of GaAs-based SLs. Inferior optical absorption of GaAs-based SL was observed in the range of 2-3 mu m. Photoresponse of GaSb-based SLs showed the cut-off wavelength at 2.6 mu m.

Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers

Long wavelength light emission was realized by capping InAs quantum dots (QDs) with short period GaAs/InAs superlattices (SLs) and an InGaAs strain-reducing layer (SRL). The optical properties were systematically investigated by photoluminescence tests. With increasing the periods of SLs, the emission wavelength of InAs QDs shifts from 1.27 to 1.53 mum. We explain the redshift as a result of the increased QD height with the SLs and the reduced strain in the dot caused by InGaAs SRL. (C) 2004 Published by Elsevier Ltd.

MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates

First, GaSb epilayers were grown on (001) GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/ GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. The SL interface between InAs and GaSb is InSb-like.

ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES

We have investigated the Wannier-Stark effect in GaAs/GaAl1-xAs superlattices under electric fields by photocurrent spectroscopy measurements in the range of temperatures 10-300 K. The linewidth of the Oh Stark-ladder exciton was found to increase significantly along with an increase in peak intensity when the electric field increases. We present a mechanism based on an enhanced interface roughness scattering of electronic states due to Wannier-Stark localization in order to explain this increased broadening with electric field. This electric-field-related scattering mechanism will weaken the negative differential conductance effects in superlattices predicted by Esaki and Tsu.

High-field nonlinear perpendicular transport in a GaAs/Al_(0.3)Ga_(0.7) As short-period superlattice

于2010-11-23批量导入

InAs/GaSb superlattices for photodetection in short wavelength infrared range

The first report of a short wavelength infrared detector based on type II InAs/GaSb superlattices is presented. Very short period superlattices containing InAs (2ML)/GaSb (8ML) superlattices (SLs) were grown by molecular-beam epitaxy on GaSb substrates. The photoluminescence showed a cut-off wavelength at 2.1 mu m at 10 K and 2.6 mu m at 300 K. Room-temperature optical transmittance spectra shows obvious absorption in InAs (2ML)/GaSb (8ML) SL in the range of 450-680 meV, i.e. 1.8-2.7 mu m. The cut-off wavelength moved from 2.3 mu m to 2.6 mu m with temperature rising from 77 K to 300 K in photoresponse spectra. The blackbody response R-v exponentially decreased as a function of 1/T in two temperature sections (130-200 K and 230-300 K). The blackbody detectivity D-bb(center dot) was beyond 1 x 10(8) cmHz(1/2)/W at room temperature. (C) 2009 Elsevier B.V. All rights reserved.

Experimental Investigations on Interaction of Two Drops by Thermocapillary-Buoyancy Migration

Experiments were performed, in a terrestrial environment, to study the migration and interaction of two drops with different diameters in matrix liquid under temperature gradient field. Pure soybean oil and silicon oil were used as matrix liquid and the drop liquid, respectively. The information on the motions of two drops was recorded by CCD camera system in the experiments to analyze the trajectories and velocities of the drops. Our experiments showed that, upon two drops approaching each other, the influence of the larger drop on the motion of the smaller one became significant. Meanwhile the smaller drop had a little influence on the larger one all the time. The oscillation of migration velocities of both drops was observed as they were approaching. For a short period the smaller drop even moved backward when it became side by side with the larger one during the migration. Although our experimental results on the behavior of two drops are basically consistent with the theoretical predictions, there are also apparent differences. 2006 Elsevier Ltd. All rights reserved. Keywords: Thermocapillary migration; Drop; Interaction; Oscillation 1. Introduction A bubble or drop will move when placed in another fluid with temperature gradient. This motion happens as a consequence of the variation of interfacial tension with temperature. Such a phenomenon is already known as Marangoni migration problem. With the development of microgravity science, bubble dynamics and droplet dynamics became a hot point problem of research because this investigation is very important for basic research as well as for applications in reduced gravity environment, such as space material science, chemical engineering and so on. Young et al. first investigated the thermocapillary migration of

Unsteady Model of Drop Marangoni Migration in Microgravity

The experiments of drop Marangoni migration have been performed by the drop shift facility of short period of 4.5 s, and the drop accelerates gradually to an asymptotic velocity during the free fall. The unsteady and axisymmetric model is developed to study the drop migration for the case of moderate Reynolds number Re = O(1), and the results are compared with the experimental ones in the present paper. Both numerical and experimental results show that the migration velocity for moderate Reynolds number is several times smaller than that given by the linear YGB theory.

Improved Procedure on the Microscopic Approach to Determine Colloidal Stability

We present an improved procedure on the approach to determine the stability of polystyrene spheres at microscopic particle levels by means of artificially induced particle collisions with the aid of optical tweezers [J.Chem.Phys. 119, 2399(2003)]. The basic consideration on this new development is that the major contribution to the sticking probability for a particle pair caught into the optical trap for a short period is from its single collision; therefore, if the trapping duration for the pair is taken to be short, the accumulated sticking probability will be a good approximation for the single collision. The experimental procedure associated with this approximation does not resort to exactly controlling the short trapping duration or request the trapping duration correction as previously reported and therefore it is more practical and applicable for broader range of the stability ratio. The experimental results under different electrolyte concentrations by the new procedure are consistent with those from the turbidity measurements.