46 resultados para Sharp increase
em Chinese Academy of Sciences Institutional Repositories Grid Portal
Resumo:
For efficiently cooling electronic components with high heat flux, experiments were conducted to study the flow boiling heat transfer performance of FC-72 over square silicon chips with the dimensions of 10 × 10 × 0.5 mm3. Four kinds of micro-pin-fins with the dimensions of 30 × 60, 30 × 120, 50 × 60, 50 × 120 μm2 (thickness, t × height, h) were fabricated on the chip surfaces by the dry etching technique for enhancing boiling heat transfer. A smooth surface was also tested for comparison. The experiments were made at three different fluid velocities (0.5, 1 and 2 m/s) and three different liquid subcoolings (15, 25 and 35 K). The results were compared with the previous published data of pool boiling. All micro-pin-fined surfaces show a considerable heat transfer enhancement compared with a smooth surface. Flow boiling can remarkably decrease wall superheat compared with pool boiling. At the velocities lower than 1 m/s, the micro-pin-finned surfaces show a sharp increase in heat flux with increasing wall superheat. For all surfaces, the maximum allowable heat flux, qmax, for the normal operation of LSI chips increases with fluid velocity and subcooling. For all micro-pin-finned surfaces, the wall temperature at the critical heat flux (CHF) is less than the upper limit for the reliable operation of LSI chips, 85◦C. The largest value of qmax can reach nearly 148 W/cm2 for micro-pin-finned chips with the fin height of 120 μm at the fluid velocity of 2 m/s and the liquid subcooling of 35 K. The perspectives for the boiling heat transfer experiment of the prospective micro-pin-finned sur- faces, which has been planned to be made in the Drop Tower Beijing/NMLC in the future, are also presented.
Resumo:
This study investigates the ozonation of 17 alpha-ethinylestradiol (EE2) in aqueous solution. The affecting factors on the degradation of EE2 were studied and described in details, such as initial EE2 concentration, initial pH value and ozone concentration. In addition, some parameters such as pH. electrical conductivity, mineralization efficiency and degradation products were monitored during the process. The mineralization efficiency of EE2 could reach 53.9%. During the ozonation process the rapid decrease of pH and the sharp increase of electrical conductivity indicated the fort-nation of acidic by-products, small fragments and ions which were confirmed by high performance liquid chromatography (HPLC) and gas chromatography-mass spectrometry (GUMS) analysis. Results showed that there were intermediate products of smaller molecule with higher polarity produced during the course of EE2 degradation. Then a possible reaction pathway for EE2 degradation involving all intermediates detected is proposed. During the ozonation process EE2 was first oxidized into hydroxyl-semiquinone isomers which were subsequently degraded into low molecular weight compounds such as oxalic acid, malonate, glutarate, and so on. Furthermore. these organic acids are easily oxidized by ozone into carbon dioxide (CO2). This work shows that ozonation process is promising for the removal of EE2. The results can provide some useful information for the potential treatment of EE2 by ozonation in aqueous solution. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
The results of conductivity, photoconductivity and constant photocurrent method absorption measurements by DC and AC methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. A series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. The increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. The comparison of the absorption spectra obtained by DC and AC methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. However we found a dramatic discrepancy between the absorption spectra obtained by DC and AC constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. AC constant photocurrent method gives higher absorption coefficient than DC constant photocurrent method in the photon energy range of 1.2-1.7 eV. This result indicates the possibility of crystalline grains contribution to absorption spectra measured by AC constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 Published by Elsevier B.V.
Resumo:
Ce6-xDyxMoO15-delta (0.0 <= x <= 1.8) were synthesized by modified sol-gel method. Structural and electrical properties were investigated by means of X-ray diffraction (XRD), Raman, X-ray photoelectron spectroscopy (XPS) and electrochemical impedance spectroscopy (EIS). The XRD patterns showed that the materials were single phase with a cubic fluorite structure. Impedance spectroscopy measurement in the temperature range between 350 degrees C and 800 degrees C indicated a sharp increase in conductivity for the system containing small amount of Dy2O3. The Ce5.6Dy0.4MoO15-delta detected to be the best conducting phase with the highest conductivity (sigma(t) = 8.93 x 10(-3) S cm(-1)) is higher than that of Ce5.6Sm0.4MoO15-delta (sigma(t) = 2.93 x 10(-3) S cm(-1)) at 800 degrees C, and the corresponding activation energy of Ce5.6Dy0.4MoO15-delta (0.994 eV) is lower than that of Ce5.6Sm0.4MoO15-delta (1.002 eV).
Resumo:
Solid solutions of Ce1-xNdxO2-x/2 (0.05 <= x <= 0.2) and (Ce1-xNdx)(0.95)MO0.05O2-delta (0.05 <= x <= 0.2) have been synthesized by a modified sol-gel method. Both materials have very low content of SiO2 (similar to 27 ppm). Their structures and ionic conductivities were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and electrochemical impedance spectroscopy (M). The XRD patterns indicate that these materials are single phases with a cubic fluorite structure. The powders calcined at 300 degrees C with a crystal size of 5.7 nm have good sinterability, and the relative density could reach above 96% after being sintered at 1450 degrees C. With the addition Of MoO3, the sintering temperature could be decreased to 1250 degrees C. Impedance spectroscopy measurement in the temperature range of 250-800 degrees C indicates that a sharp increase of conductivity is observed when a small amount of Nd2O3 is added into ceria, of which Ce0.85Nd0.15O1.925 (15NDC) shows the highest conductivity. With the addition of a small amount Of MoO3, the grain boundary conductivity of 15NDC at 600 degrees C increases from 2.56 S m(-1) to 5.62 S m(-1).
Resumo:
Polycrystalline Sr2FeMoO6 compounds with most vacancies at normal Fe sites were fabricated through Mo hole doping; its effect is similar to Fe3+ by our estimation. Sharp increase of magnetoconductance at low field was evidence of spin-polarized tunneling between the grains. The room temperature low-field magnetoresistivity at optimal doping x=0.03 is 8.5% in 3000 Oe and increases to 11.4% in 1 T associated with soft magnetic behaviors; furthermore it exhibits a ferromagnetic Curie temperature of 450 K, connected with hole doping effect. The improved magnetoresistivity behavior was related to Curie temperature.
Resumo:
The present paper reports a study of the extraction of HNO3 with Cyancx923 (C923)-n-heptane. A third phase appears at different aqueous HNO3 concentrations for various initial C923 concentrations. Data analysis indicates that almost all of HNO3 and H2O are extracted into the middle phase. More HNO3 and water at a fixed ratio are solubilized in the reverse micelles or microemulsion in the third phase, which leads to a sharp increase of their concentration. The effect of temperature on the phase behavior of the three-phase system has also been investigated.
Resumo:
This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).
Resumo:
A new area function is introduced and applied to a Berkovich tip in order to characterize the contact projected area between an indenter and indented material. The function can be related directly to tip-rounding, thereby having obviously physical meaning. Nanoindentation experiments are performed on a commercial Nano Indenter XPsystem. The other two area functions introduced by Oliver and Pharr and by Thurn and Cook respectively are involved in this paper for comparison. By comparison from experimental results among different area functions, the indenter tip described by the proposed area function here is very close to the experimental indenter.
Resumo:
Direct numerical simulation of the turbulent boundary layer over a sharp cone with 20 degrees cone angle (or 10 degrees half-cone angle) is performed by using the mixed seventh-order up-wind biased finite difference scheme and sixth-order central difference scheme. The free stream Mach number is 0.7 and free stream unit Reynolds number is 250000/inch. The characteristics of transition and turbulence of the sharp cone boundary layer are compared with those of the flat plate boundary layer. Statistics of fully developed turbulent flow agree well with the experimental and theoretical data for the turbulent flat-plate boundary layer flow. The near wall streak-like structure is shown and the average space between streaks (normalized by the local wall unit) keeps approximately invariable at different streamwise locations. The turbulent energy equation in the cylindrical coordinate is given and turbulent energy budget is studied. The computed results show that the effect of circumferential curvature on turbulence characteristics is not obvious.
Resumo:
This paper presents an asymptotic analysis of the near-tip stress and strain fields of a sharp V-notch in a power law hardening material. First, the asymptotic solutions of the HRR type are obtained for the plane stress problem under symmetric loading. It is found that the angular distribution function of the radial stress sigma(r) presents rapid variation with the polar angle if the notch angle beta is smaller than a critical notch angle; otherwise, there is no such phenomena. Secondly, the asymptotic solutions are developed for antisymmetric loading in the cases of plane strain and plane stress. The accurate calculation results and the detailed comparisons are given as well. All results show that the singular exponent s is changeable for various combinations of loading condition and plane problem.
Resumo:
用蒙特卡罗方法仿真了增益随机散射体中的非相干辐射,观察了非相干随机激光的特性。当抽运能量超过一定阈值时,散射体的整体辐射谱突然变窄;随着抽运能量继续增大,在光滑谱背景上会出现分离尖峰;散射体内空间某位置处频率组成不是单一的;辐射谱中某单个频率的空间方向分布和位置分布比较广。增益随机散射体中产生的非相干随机激光本质上既不同于无反馈的普通放大自发辐射,又不同于相干反馈形成的常规激光。解释了非相干随机激光辐射谱上出现分离尖峰的原因,出现这种现象是由于少数光子在增益散射体中经历较多次数散射后得到了相对充分的放大。
Resumo:
this paper was retracted