Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

The origin of the flat band voltage roll-off (V-FB roll-off) in metal gate/high-k/ultrathin-SiO2/Si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the SiO2/Si interface on the V-FB sharp roll-off is proposed. The V-FB sharp roll-off appears when the thickness of the SiO2 interlayer diminishes to below the oxygen diffusion depth. The results derived using our model agree well with experimental data and provide insights to the mechanism of the V-FB sharp roll-off.

Nd : YAG ceramic laser obtained high slope-efficiency of 62% in high power applications

By using quite uniformly nine-stacks side-around arranged compact pumping system, a high power Nd:YAG ceramic quasi-CW laser with high slope efficiency of 62% has been demonstrated. With 450 W quasi-CW stacked laser diode bars pumping at 808 nm, performance of the Nd: YAG ceramic laser with different output coupling mirrors has been investigated. Optimum output power of 236 W at 1064 nm was obtained and corresponding optical-to-optical conversion efficiency was as high as 52.5%. The laser system operated quite stably and no saturation phenomena have been observed, which means higher output laser power could be obtained if injecting higher pumping power. The still-evolving Nd: YAG ceramics are potential super excellent media for high power practical laser applications. (c) 2005 Optical Society of America.

Design and fabrication of color filters for projection display system

Color filters are key components in an optical engine projection display system. In this paper, a new admittance-matching method for designing and fabricating the high performance filters is described, in which the optimized layers are limited to the interfaces between the stack (each combination of quarter-wave-optical-thickness film layers is called a stack) and stack, or between stack and substrate, or between stack and incident medium. This method works well in designing filters containing multiple stacks such as UV-IR cut and broadband filters. The tolerance and angle sensitivity for the designed film stacks are analyzed. The thermal stability of the sample color filters was measured. A good result in optical performance and thermal stability was obtained through the new design approach. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Negative dispersion mirrors in Ta2O5/: SiO2 for femtosecond Ti : Sapphire lasers by using gires-tournois interferometers

We design and experimentally demonstrate some negative dispersion mirrors with optimized Gires-Tournois interferometers. The mirror structure is composed of 38 alternating Ta2O5 and SiO2 layers and could be regarded as two sections: high-reflectivity section consisting of a series of quarter-wavelength optical thickness stacks and negative-dispersion section consisting of only 13 layers. The designed mirrors exhibit the expected performance. These mirrors were fabricated by using ion beam sputtering. By adopting such mirrors, dispersion of a mode-locked femtosecond Ti:sapphire laser has been compensated for mostly. With two series of the mirrors, 32 fs and 15 fs pulses have been obtained respectively.

Design and fabrication of color filters for projection display system

Color filters are key components in an optical engine projection display system. In this paper, a new admittance-matching method for designing and fabricating the high performance filters is described, in which the optimized layers are limited to the interfaces between the stack (each combination of quarter-wave-optical-thickness film layers is called a stack) and stack, or between stack and substrate, or between stack and incident medium. This method works well in designing filters containing multiple stacks such as UV-IR cut and broadband filters. The tolerance and angle sensitivity for the designed film stacks are analyzed. The thermal stability of the sample color filters was measured. A good result in optical performance and thermal stability was obtained through the new design approach. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Effect of alumina and chromium interlayers on microstructures and optical properties of thin Ag films on glass substrates

Effects of alumina and chromium interlayers on the microstructure and optical properties of thin Ag films are investigated by using spectrophotometry, x-ray diffraction and AFM. The characteristics of Ag films in Ag/glass, Ag/Al2O3/glass and Ag/Cr/glass stacks are analysed. The results indicate that the insertion of an Al2O3 or Cr layer decreases the grains and influences the reflectance of Ag films. The reflectance of the Ag film can be increased by controlling the thickness of alumina interlayer. The stability of Ag films is improved and the adhesion of Ag films on glass substrates is enhanced by alumina as an interlayer.

Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers

We report an experimental and theoretical study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers. The maximum modal gain of the QD laser with five stacks of QDs is as high as 17.5 cm(-1) which is the same as that of the undoped laser with identical structures. The expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. We theoretically calculated the maximum modal gain of the QD lasers and the result is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 mu m InAs/GaAs QD lasers in optical communications systems.

Gain measurement and anomalous decrease of peak gain at long wavelength for InAs/GaAs quantum-dot lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot (QD) lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210 nm and 1300 nm. For a QD laser with the cavity length of 1060 mu m, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.

Advances in high power semiconductor diode lasers - art. no. 682402

High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.

Structural evolution of tensile-deformed high-density polyethylene during annealing: Scanning synchrotron small-angle X-ray scattering study

The structural evolution of high-density polyethylene subjected to uniaxial tensile deformation was investigated as a function of strain and after annealing at different temperatures using a scanning synchrotron small-angle X-ray scattering (SAXS) technique. The results confirm that in the course of tensile deformation intralamellar block slips were activated at small deformations followed by a stress-induced fragmentation and recrystallization process yielding thinner lamellae with their normal parallel to the stretching direction. The original sheared lamellae underwent severe internal deformation so that they were even less stable than the newly developed thinner lamellae. Accordingly, annealing results in a melting of the original crystallites even at moderate strains where the stress-induced fragmentation and recrystallization just sets in and generates a distinctly different form of lamellar stacks aligned along the drawing direction. It was found that the lamellae newly formed during stretching at moderate strains remain stable at lower temperature. Only at a very high annealing temperature of 120 degrees C can they be melted, leading to an isotropic distribution of the lamellar structure.

Controlled synthesis of 2D Au nanostructure assembly with the assistance of sulfonated polyaniline nanotubes

A wet chemical approach is used successfully to produce nanostructured Au material by the reduction of sulfonated polyaniline (SPANI) nanotubes. The Au nanostructures obtained are composed of single crystal Au nanoplates, which are aggregated layer-by-layer into stacks or edge-on-face into clusters at various conditions. The Au nanoplate diameter and thickness can be conveniently controlled in the range of 100 nm to 2 mu m and 10 to 30 nm, respectively, with no accompanying single Au nanoparticles being observed. The formation of the Au nanostructures was controlled by the degradation of SPANI. The gradually and slowly released segments of SPANI served as the reductant during the growth of the 2D Au nanostructures.

Context and conformation dictate function of a transcription antitermination switch

In bacteriophage, transcription elongation is regulated by the N protein, which binds a nascent mRNA hairpin ( termed boxB) and enables RNA polymerase to read through distal terminators. We have examined the structure, energetics and in vivo function of a number of N boxB complexes derived from in vitro protein selection. Trp18 fully stacks on the RNA loop in the wild-type structure, and can become partially or completely unstacked when the sequence context is changed three or four residues away, resulting in a recognition interface in which the best binding residues depend on the sequence context. Notably, in vivo antitermination activity correlates with the presence of a stacked aromatic residue at position 18, but not with N boxB binding affinity. Our work demonstrates that RNA polymerase responds to subtle conformational changes in cis-acting regulatory complexes and that approximation of components is not sufficient to generate a fully functional transcription switch.

In situ study of nanostructure and morphological development during the crystal-mesophase transition of poly(di-n-hexylsilane) and poly(di-n-butylsilane) by X-ray and hot-stage AFM

Nanostructure and morphology and their development of poly(di-n-hexylsilane) (PDHS) and poly(di-n-butylsilane) (PDBS) during the crystal-mesophase transition are investigated using small angle X-ray scattering (SAXS), wide angle X-ray diffraction and hot-stage atomic force microscopy. At room temperature, PDHS consists of stacks of lamellae separated by mesophase layers, which can be well accounted using an ideal two-phase model. During the crystal-mesophase transition, obvious morphological changes are observed due to the marked changes in main chain conformation and intermolecular distances between crystalline phase and mesophase. In contrast to PDHS, the lamellae in PDBS barely show anisotropy in dimensions at room temperature. The nonperiodic structure and rather small electronic density fluctuation in PDBS lead to the much weak SAXS. The nonperiodic structure is preserved during the crystal-mesophase transition because of the similarity of main chain conformation and intermolecular distances between crystalline phase and mesophase.