DEFECT MODEL OF PHOTOCONVERSION BY OXYGEN IN SEMIINSULATING GAAS

The basic idea of a defect model of photoconversion by an oxygen impurity in semi-insulating GaAs, proposed in an earlier paper, is described in a systematic way. All experiments related to this defect, including high-resolution spectroscopic measurements, piezospectroscopic study, and recent measurements on electronic energy levels, are explained on the basis of this defect model. The predictions of the model are in good agreement with the experiments. A special negative-U mechanism in this defect is discussed in detail with an emphasis on the stability of the charge states. The theoretical basis of using a self-consistent bond-orbital model in the calculation is also given.

The application and a substitution defect model for Eu3+ -> Eu2+ reduction in non-reducing atmospheres in borates containing BO4 anion groups

The variations of emission intensities of SrB4O7:Eu2+ and Sr2B5O9Cl:Eu2+ prepared in different atmospheres are discussed in view of the structure of host compounds. A model of substitution defects is proposed to explain the abnormal reduction of Eu3+ --> Eu2+ in non-reducing atmospheres of N-2, air and O-2. Experiment results show that SrB4O7:Eu2+ phosphor sample prepared in N-2 atmosphere has an emission intensity of 94% as high as that of the sample prepared in H-2 gas. This implies that the reduction of Eu2+ --> Eu2+ in non-reducing atmospheres could be potentially used in preparing phosphors, such as SrB4O7:Eu2+. (C) 1999 Elsevier Science Ltd. All rights reserved.

Fracture Mechanisms And Size Effects Of Brittle Metallic Foams: In Situ Compression Tests Inside Sem

In situ compressive tests on specially designed small samples made from brittle metallic foams were accomplished in a loading device equipped in the scanning electron microscopy (SEM). Each of the small samples comprises only several cells in the effective test zone (ETZ), with one major cell in the middle. In such a system one can not only obtain sequential collapse-process images of a single cell and its cell walls with high resolution, but also correlate the detailed failure behaviour of the cell walls with the stress-strain response, therefore reveal the mechanisms of energy absorption in the mesoscopic scale. Meanwhile, the stress-strain behaviour is quite different from that of bulk foams in dimensions of enough large, indicating a strong size effect. According to the in situ observations, four failure modes in the cell-wall level were summarized, and these modes account for the mesoscopic mechanisms of energy absorption. Paralleled compression tests on bulk samples were also carried out, and it is found that both fracturing of a single cell and developing of fracture bands are defect-directed or weakness-directed processes. The mechanical properties of the brittle aluminum foams obtained from the present tests agree well with the size effect model for ductile cellular solids proposed by Onck et al. (C) 2008 Elsevier Ltd. All rights reserved.

Cr4+在八面体格位中的光谱特性研究

Cr-doped and Mg, Cr-codoped Al2O3 crystals were grown by Czochralski method. The latter has a broad absorption peak in 900-1600nm region. We investigated the change of the absorption band with annealing under different atmospheres or temperatures. Through establishing a structure defect model, we successfully interpreted all the experiment results and confirmed that the extremely broad infrared absorption band belonged to Cr4+, which should occupy the octahedral sites in Al2O3.

Electrical transport in metallic films

On the basis of the Boltzmann equation, the authors propose a model that includes scattering from both film surfaces and grain boundaries, and have studied the quasiclassical electrical transport in metallic films. The in-plane electric conductivity of metallic films is obtained, and the theoretical results are shown to be in good agreement with experimental data. We also give the relation between temperature coefficient of resistivity and thickness of metallic films and make a comparison with experiment. <(C)> 2004 American Institute of Physics.

Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers

Nanocrystalline Ge embedded in amorphous silicon dioxide matrix was fabricated by oxidizing hydrogenated amorphous Si/hydrogenated amorphous Ge (a-Si:H/a-Ge:H) multilayers. The structures before and after oxidation were systematically investigated. The orange-green light emission was observed at room temperature and the luminescence peak was located at 2.2 eV. The size dependence in the photoluminescence peak energy was not observed and the luminescence intensity was increased gradually with oxidation time. The origin for this visible light emission is discussed. In contrast to the simple quantum effect model, the surface defect states of nanocrystalline Ge are believed to play an important role in radiative recombination process. (C) 1999 American Institute of Physics. [S0003-6951(99)02425-0].

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

a dynamic model to handle defect-oriented processes

Tongji Univ, Inst Dev Study, Syst Engn Soc China, Comm Syst Dynam, Syst Dynam Soc, China Chapter, Shanghai Inst Foreign Trade, Syst Dynam Soc, Chapters Asia Pacific Area

Defect evolution and hydrodynamic effects in lamellar ordering process of two-dimensional quenched block copolymers

The effects of hydrodynamic interactions on the lamellar ordering process for two-dimensional quenched block copolymers in the presence of extended defects and the topological defect evolutions in lamellar ordering process are numerically investigated by means of a model based on lattice Boltzmann method and self-consistent field theory. By observing the evolution of the average size of domains, it is found that the domain growth is faster with stronger hydrodynamic effects. The morphological patterns formed also appear different. To study the defect evolution, a defect density is defined and is used to explore the defect evolutions in lamellar ordering process. Our simulation results show that the hydrodynamics effects can reduce the density of defects. With our model, the relations between the Flory-Huggins interaction parameter chi, the length of the polymer chains N, and the defect evolutions are studied.

A meso elastoplastic constitutive model for polycrystalline metals based on equivalent slip systems with latent hardening

A meso material model for polycrystalline metals is proposed, in which the tiny slip systems distributing randomly between crystal slices in micro-grains or on grain boundaries are replaced by macro equivalent slip systems determined by the work-conjugate principle. The elastoplastic constitutive equation of this model is formulated for the active hardening, latent hardening and Bauschinger effect to predict macro elastoplastic stress-strain responses of polycrystalline metals under complex loading conditions. The influence of the material property parameters on size and shape of the subsequent yield surfaces is numerically investigated to demonstrate the fundamental features of the proposed material model. The derived constitutive equation is proved accurate and efficient in numerical analysis. Compared with the self-consistent theories with crystal grains as their basic components, the present theory is much simpler in mathematical treatment.

Analysis of strip electric saturation model of crack problem in piezoelectric materials

This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).

Numerical Analysis of Theoretical Model of the Rf MEMs Switches

An improved electromechanical model of the RF MEMS (radio frequency microelectromechanical systems) switches is introduced, in which the effects of intrinsic residual stress from fabrication processes, axial stress due to stretching of beam, and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model. A semi-analytical method is developed to calculate the behavior of the RF MEMS switches. Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared, and the corresponding analysis with the dimensionless numbers is conducted too. The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.

Effect of structural relaxation on deformation behaviour of Zr-based metallic glass

Structural relaxation through isothermal annealing at tempertature below glass transition is conducted on Zr46.75Ti8.25Cu7.5Ni10Be27.5 (Vitreloy-4) bulk metallic glass. Defect concentration is correlated with the annealing time t according to differential scanning calorimetry thermalgrams. The effects of structural relaxation on mechanical properties and deformation behaviour are investigated by using instrumented nanoindentation. It is found that as-cast alloy exhibits pronounced serration flow during the loading process of nanoindentation, and the size and number of serrations decrease with the annealing time. The change of the deformation behaviour with structural relaxation is explained using a free volume model.

Behaviour of a puff of resuspended sediment: a conceptual model

The particulate matter concentration above the seabed is usually assumed to decrease with height, following an exponential or Rouse profile. Many particulate matter concentration profiles with a peak were found on the North Mediterranean bottom water at a few tens of metres above the bottom. A particle size signal at the same altitude was found in this area and on the New York Eight shelf. It is assumed that this unexpected shape is due to a cloud of resuspended cohesive sediments originating from an impulse resuspension process. A simplified three-dimensional numerical model is proposed to describe the behaviour of resuspended particulate matter that originates from a sediment impulse vertically injected in the bottom water. This model reproduces the concentration profile shape observed, and it gives indications concerning the length and time characteristics of such a cloud, depending on the water velocity and bottom boundary layer properties.

A Study of Size-Dependent Microindentation

We recently proposed a strain gradient theory to account for the size dependence of plastic deformation at micron and submicron length scales. The strain gradient theory includes the effects of both rotation gradient and stretch gradient such that the rotation gradient influences the material character through the interaction between the Cauchy stresses and the couple stresses; the stretch gradient measures explicitly enter the constitutive relations through the instantaneous tangent modulus. Indentation tests at scales on the order of one micron have shown that measured hardness increases significantly with decreasing indent size. In the present paper, the strain gradient theory is used to model materials undergoing small-scale indentations. A strong effect of including strain gradients in the constitutive description is found with hardness increasing by a factor of two or more over the relevant range behavior. Comparisons with the experimental data for polycrystalline copper and single crystal copper indeed show an approximately linear dependence of the square of the hardness, H 2, on the inverse of the indentation depth, 1/h, I.e., H-2 proportional to 1/h, which provides an important self-consistent check of the strain gradient theory proposed by the authors earlier.