Synthesis, electrochemistry, fluorescence and ECL of Ru (phen)(2) (dcbpy) (PF6)(2)

A new ECL-active species, Ru (phen)(2) (dcbpy) (PF6)(2), has been designed and synthesized. Its structure was confirmed by means of IR, ESI-MS and 2D NMR. Also, its properties of electrochemistry, fluorescence and ECL are reported, which have suggested a good hope of being used in electrochemiluminescent immunoassay and nucleic acid hybridization.

The accuracy of Kirchhoff's approximation in describing the far field speckles produced by random self-affine fractal surfaces

Based on the rigorous formulation of integral equations for the propagations of light waves at the medium interface, we carry out the numerical solutions of the random light field scattered from self-affine fractal surface samples. The light intensities produced by the same surface samples are also calculated in Kirchhoff's approximation, and their comparisons with the corresponding rigorous results show directly the degree of the accuracy of the approximation. It is indicated that Kirchhoff's approximation is of good accuracy for random surfaces with small roughness value w and large roughness exponent alpha. For random surfaces with larger w and smaller alpha, the approximation results in considerable errors, and detailed calculations show that the inaccuracy comes from the simplification that the transmitted light field is proportional to the incident field and from the neglect of light field derivative at the interface.

Fabrication of fused silica phase gratings with inductively coupled plasma technology

Inductively coupled plasma (ICP) technology is a new advanced version of dry-etching technology compared with the widely used method of reactive ion etching (RIE). Plasma processing of the ICP technology is complicated due to the mixed reactions among discharge physics, chemistry and surface chemistry. Extensive experiments have been done and microoptical elements have been fabricated successfully, which proved that the ICP technology is very effective in dry etching of microoptical elements. In this paper, we present the detailed fabrication of microoptical fused silica phase gratings with ICP technology. Optimized condition has been found to control the etching process of ICP technology and to improve the etching quality of microoptical elements greatly. With the optimized condition, we have fabricated lots of good gratings with different periods, depths, and duty cycles. The fabricated gratings are very useful in fields such as spectrometer, high-efficient filter in wavelength-division-multiplexing system, etc..

Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy

A series of superlattices delta-GaNxAs1-x/GaAs were grown by a DC plasma-N-2-assisted molecular beam epitaxy. The evolution of the surface reconstruction during the growth has been studied with the use of in situ reflection high-energy electron diffraction. The superlattices have been characterized by high-resolution X-ray diffraction measurements. Distinct satellite peaks indicate that the superlattices are of good quality. The N compositions in strained GaNxAs1-x monolayers are obtained from the dynamical simulations of the measured X-ray diffraction patterns. The periodicity fluctuations of N composition are obtained from a kinematical method dependent on the broadening of the satellite peaks of the X-ray diffraction. (C) 2000 Elsevier Science B.V. All rights reserved.

The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

STUDY ON PREPARATION OF GAN AND COSI2 EPITAXIAL-FILMS BY MASS ANALYZED LOW-ENERGY DUAL ION-BEAM EPITAXY

The Mass Analyzed Low Energy Dual Ion Beam Epitaxy (MALE-DIBE) system has been designed and constructed in our laboratory. We believe that the system, which was installed and came into full operation in 1988, is the first facility of this kind. With our system we have carried out studies, for the first time, on compound synthesis of GaN and CoSi2 epitaxial thin films. RHEED and AES results show that GaN films, which were deposited on Si and sapphire substrates, are monocrystalline and of good stoichiometry. To our knowledge, GaN film heteroepitaxially grown on Si. which is more lattice-mismatched than GaN on sapphire, has not been reported before by other authors. RBS and TEM investigations indicated a rather good crystallinity of CoSi2 with a distinct interface between CoSi2 and the Si substrate. The channelling minimum yield chi(min) from the Co profile is approximately 4%. The results showed that the DIBE system with simultaneous arrival of two beams at the target is particularly useful in the formation of novel compounds at a relatively low substrate temperature.

Studies on state and structure of noble metals in electrocatalyst made by coprecipitation method

The electrocatalysts of Pt/C, PtRu/C and Ru/C were prepared by the impregnation method. The facet characterization, the dispersion and the particle size for the catalysts were determined by means of X-ray diffraction and transmission electron microscopy. X-ray photoelectron spectroscopy was also used to analyze the state and the valency of the noble metals. The results show that the particle size was in nanometer range and the binary metals have come into being an alloy. The platinum in the catalysts existed in zero valency. The valency of the ruthenium on the surface is different from that in the body, while the ruthenium on the surface existed in oxide-form. PtRu/C and Pt/C are of good activity to the electrooxidation of hydrogen except Ru/C. PtRu/C is more tolerant of CO than Pt/C, and CO is only adsorbed on Pt.

Effect of the nature of annealing solvent on the morphology of diblock copolymer blend thin films

The morphologies and structures for the thin film of blend systems consisting of two asymmetric polystyrene-block-polybutadiene (SB) diblock copolymers induced by annealing in the vapor of different solvents, namely, cyclohexane, benzene, and heptane, which have different selectivity or preferential affinity for a certain block, were investigated by tapping mode atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results revealed that even a slight preferential affinity of good solvent for one block would strongly alter the morphology of the blend thin film.

Synthesis, characterization, stability and relaxation behaviours of rare earth heteropolymetalates

Two rare earth heteropolymetalates K9GdW10O36 and K-11[Gd(PW11O39)(2)] have been synthesized and characterized by IR and elemental analysis. Their stability has been studied by TG - DTA. The TG - DTA analysis show that both complexes are of good thermal stability. Their relaxivity in D2O is 6.89 and 5.27 mmol(-1).s(-1) respectively. Interaction with BSA has also been investigated. The results indicate that the two rare earth heteropolymetalate may be potential contrast agent for MRI.

Preparation and characterization of self-assembled monolayers of trichlorogermanyl propanoic acid and its derivatives

Self-assembled monolayers(SAMs) of trichlorogermanyl propanoic acid derivatives on hydroxylated silicon substrates are prepared for the first time. Contact angle measurement, ellipsometry and X-ray photoelectron spectrometry(XPS) are used to characterize these SAMs, It is demonstrated that a quasi-2D network is formed on the surface of the substrate after molecules adsorbed on it. The molecular chains have certain tilt angles to the substrate surface, The wettabilities of the SAMs are various,because the molecules adsorbed and liquids used in the experiments are different. It can be concluded that trichlorogermanes have similar self-assembly behavior as trichlorosilanes, Four SAMs are studied together: they are acid, ethyl, butyl and hexyl surfaces whose results are of good consistency.

The electrochemical behavior of Eastman AQ/meldola blue-coated microelectrodes

Eastman-AQ 55D was coated onto a carbon fiber microelectrode surface, and the resulting modified electrodes exhibited high stability. Substantial improvement in the stability was observed as a result of good adhesion and the strong binding of large hydrophobic cations of Eastman AQ 55D. The electrode reaction of meldola blue bound in the polymer film showed a reversible, one-electron transfer process. The effects of solution pH and influence of supporting electrolyte on the modified carbon fiber microelectrode are discussed. The diffusion coefficient of meldola blue in the AQ polymer film determined by chronoamperometry is 2.3 x 10(-18) cm(2) s(-1), and the heterogeneous rate constant of meldola blue at the AQ polymer film/electrode determined by normal pulse voltammetry is 3.97 x 10(-3) cms(-1).