Mode Analysis and Design of a Low-Loss Photonic Crystal 60 degrees Waveguide Bend

The guided modes of a two-dimensional photonic crystal straight waveguide and a waveguide bend are studied in order to find the high transmission mechanism for the waveguide bend. We find that high transmission occurs when the mode patterns and wave numbers match, while the single-mode condition in the waveguide bend is not necessarily required. According to the mechanism, a simply modified bend structure with broad high transmission band is proposed. The bandwidth is significantly increased from 19 to 116 nm with transmission above 90%, and covers the entire C band of optical communication.

飞行高度及设计长度对锥形流乘波体优化的影响 Altitude and Design Length Effects of Optimized Waverider Derived from Cone Flow

高超声速条件下,乘波体布局具有高升阻比特性,本文应用单纯形加速法,以最大升阻比为目标,开展了锥形流乘波体布局优化设计研究.特别是,研究了在高层大气飞行时雷诺数效应与气动特性的关系,从乘波体飞行高度与设计长度两方面探讨雷诺数对乘波体优化的影响,结果表明：给定设计马赫数和圆锥角情况下,对于最大升阻比优化乘波体,其雷诺数越小,摩擦阻力越大,而升阻比越低.

The research and progress of micro-fabrication technologies of two-dimensional photonic crystal

The novel material of photonic crystal makes it possible to control a photon, and the photonic integration will have breakthrough progress due to the application of photonic crystal. It is based on the photonic crystal device that the photonic crystal integration could be realized. Therefore, we should first investigate photonic crystal devices based on the active and the passive semiconductor materials, which may have great potential application in photonic integration. The most practical and important method to fabricate two-dimensional photonic crystal is the micro-manufacture method. In this paper, we summarize and evaluate the fabrication methods of two-dimensional photonic crystal in near-infrared region, including electron beam lithography, selection of mask, dry etching, and some works of ours. This will be beneficial to the study of the photonic crystal in China.

On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J

We have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (RCE- p-i-n-PD) and a single heterojunction bipolar transistor (SHBT) with the same epitaxy grown layer structure. MOCVD growth of the different layer structure for the GaAs based RCE- p-i-n-PD/SHBT require compromises to obtain the best performance of the integrated devices. The SHBT is proposed with super-lattice in the collector, and the structure of the base and the collector of the SHBT is used for the RCE. Up to now, the DC characteristics of the integrated device have been obtained.

Research and Development of Electronic and Optoelectronic Materials in China

于2010-11-23批量导入

Architecture research and hardware implementation on simplified neural computing system for face identification

This paper describes a special-purpose neural computing system for face identification. The system architecture and hardware implementation are introduced in detail. An algorithm based on biomimetic pattern recognition has been embedded. For the total 1200 tests for face identification, the false rejection rate is 3.7% and the false acceptance rate is 0.7%.

Research and compilation of the Geomorphologic Atlas of the People's Republic of China (1:1,000,000)

National Natural Science Foundation of China [40871177, 40830529]

Research and development of catalytic processes for petroleum and natural gas conversions in the Dalian Institute of Chemical Physics

The Dalian Institute of Chemical Physics (DICP) of the Chinese Academy of Sciences has a long history in the R&D of catalysts and catalytic processes for petroleum and natural gas conversions in China. In this paper, results and features of some commercialized petrochemical catalysts and processes as well as newly developed processes for natural gas conversion in the pilot-plant stage are described. (C) 1999 Elsevier Science B.V. All rights reserved.