Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.

MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates

First, GaSb epilayers were grown on (001) GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/ GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. The SL interface between InAs and GaSb is InSb-like.

Electron effect of p-substituent on iron(II) and cobalt(II) pyridinebisimine catalyst for ethylene polymerization

A series of 2,6-bis(imino)pyridyl iron and cobalt complexes bearing p-substituent [2,6-(ArN=CMe)(2)C5H3N]-MCl2 (Ar=2,6-Me2C6H3, 2,4,6-Me3C6H2, 2,6-Me-2-4-BrC6H2, 2,6-Me-2-4-ClC6H2, 2,4-Me-2-6-BrC6H2, 2,4-Me-(2)-6-ClC6H2, while M=Fe, Co) have been synthesized and investigated as catalysts for ethylene polymerization in the presence of modified methylaluminoxane as a cocatalyst. The electron effect and positions of the substitueni of pyridinebisimine ligands were observed to affect considerably catalyst activity and polymer property.

Surface renewable graphite organosilicate composite electrode containing indium(III) hexacyanoferrate(II/III)

Indium(III) hexacyanoferrate(II/III) (InHCF) supported on graphite powder was prepared using the in situ chemical deposition procedure and subsequently dispersed into methyltrimethoxysilane-derived gels to yield a conductive graphite organosilicate composite. The composite was used as the electrode material to fabricate a three-dimensional InHCF-modified electrode. InHCF acts as a catalyst, graphite powder ensures conductivity by percolation, the silicate provides a rigid porous backbone and the methyl groups endow hydrophobicity and thus limit the wetting section of the modified electrode. The chemically modified electrode can electrocatalyze the oxidation of thiosulfate, and exhibits a good repeatability of surface-renewal by simple mechanical polishing, as well as simple preparation, good chemical and mechanical stability.

COMPARATIVE-STUDIES ON PERIODATOCUPRATE(II, III) AND TELLURATOCUPRATE(II, III)

The crystal structures, electronic spectra, and Cu2p XPS of Cu(III) complexes Na4H[Cu(H2TeO6)(2)]. 17H(2)O and Na4K[Cu(HlO(6))(2)]. 12H(2)O have been described. The characterizations of a Cu(III) atom in a complex are as follows: (i) In a square-planar coordination, the average bond length of Cu-O is 0.183 nm, shorter than the 0.190-0.200 nm found for a Cu(II) complex. (2) The ''blue shift'' occurs for d-d transitions in the electronic spectrum of the Cu(III) complex compared to those of its related Cu(II) complex, resulting from the higher valence state. (3) Cu(III) compounds with CuO4 square-planar coordination are expected to be diamagnetic whereas Cu(II) compounds to be paramagnetic. (4) Comprehensive investigations on Cu2p XPS show that the binding energy of Cu2p(3/2) of a pure Cu(III) compound is about 2.0 eV higher than that of its corresponding Cu(II) compound: the shake-up satellites do not appear in the Cu2p XPS for a pure diamagnetic Cu(III) compound, the same as found for a diamagnetic Ni(II) compound: the FWHM of the signal of Cu2p XPS may become broader for Cu(III) compound because its core hole's lifetime shortens due to the higher valence state of copper. (C) 1995 Academic Press, Inc.