第一届Batchelor奖获得者Howard Stone教授研究工作简评

Batchelor流体力学奖和Hill固体力学奖是国际理论与应用力学联合会(IUTAM)设立的两个奖项,旨在表彰获奖者过去十年内在其力学分支学科研究中所做出的重要贡献.Batchelor流体力学奖和Hill固体力学奖每4年评选一次,在第22届国际理论与应用力学大会(8月24～29日,澳大利亚阿德莱德)上第一次颁奖.Howard Stone教授和Michael Ortiz教授分别是Batchelor奖和Hill奖的获奖人.本刊在《简评》栏目刊登胡国庆研究员和黎波教授对两位获奖者成果的简评,并在《译文》栏目刊登两位教授的代表性论文的译文各一篇,以饷读者.

昆明地区花卉害虫及天敌

1997 年5～ 8 月至1998 年4～ 8 月, 对昆明地区的花卉害虫及天敌进行了考 察和标本采集, 共采到花卉害虫及天敌标本4500 多号, 经鉴定分14 目, 65 科, 158 属, 205 种。标本保存在中国科学院昆明动物研究所。

Lentivirus介导表达多基因的人胚基因工程神经干细胞的实验研究

目的:探索以Lentivirus为载体,构建同时携带并表达多基因的基因工程人胚神经干细胞(hum an neu鄄ral stem cell,hNSC)的可行性,为脊髓损伤治疗的研究提供材料。方法:培养和鉴定hNSC;用携带绿色荧光蛋白(green fluorescence protein,GFP)和神经营养因子-3(neurotrophic factor-3,NT-3)的Lentivirus转染hNSC;用荧光显微镜观察、鼠胚背根神经结培养(dorsal root ganglion,DRG)和Slot blot等方法检测基因工程hNSC的多基因表达情况。结果:培养获得了大量的hNSC;荧光显微镜观察到几乎100%的hNSC表达GFP;基因工程hNSC的培养液能促使大鼠DRG旺盛生长;Slot blot检测到基因工程hNSC能高效分泌NT-3蛋白。结论:以Lentivirus为载体能构建同时携带并稳定表达多基因的基因工程hNSC,为脊髓损伤治疗的基础研究及进一步临床应用提供了有价值的细胞资源。

苯并(a)芘致毒的鱼的分子生态毒理学指标研究

通过测定典型的多环芳烃类物质苯并（a）芘（BaP）致毒后鱼体内几种重要分子生态毒理学指标的变化，来反映苯并（a）芘致毒对鱼体的影响．结果表明，肝脏ATPase活性降低，GST活性升高，DNA加合物相对标记水平（RAL）也增大，而EROD活性没有明显改变．这说明苯并（a）芘致毒对鱼体正常生命活动产生了重大影响，并具有潜在的致癌性．

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.

High-speed electrooptical VOA integrated in silicon-on-insulator

In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method (BPM) and two-dimensional semiconductor device simu-lation tool PISCES-Ⅱ were used to analyze the dc and transient characteristics of the device. The devicehas a response time (including rise time and fall time) less than 200 ns, much faster than the thermoopticand micro-electromechanical systems (MEMSs) based VOAs.

仿生模式识别在单镜头人脸识别中的应用

提出了一种基于仿生模式识别（Biomimatic Pattern Recognition）和多权值神经元网络(Multi-Weights.Neu-ral Network)的人脸识别新方法．对仿生模式识别理论在人脸识别中的应用模型作了讨论，并且介绍了一种新的人脸特征提取方法．本文通过实验对本文提出的基于仿生模式识别的方法和基于K近邻的方法做了对比，实验结果表明本文的方法克服了对未训练类型的人脸误识问题，提高了人脸识别系统的训练速度和正确识别率．

Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

The annealing behavior of Si implanted with Ge and then BF2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 degrees C for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 degrees C for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 degrees C, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees C for 60 minutes display two SiGe peaks, which may be related to the B concentration profiles.

Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials

Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources. Heterostructures and MQWs with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. The structural stability and strain relaxation in Si1-xGex/Si heterostructures have been investigated, and compared to that in the As ion-implanted Si1-xGex epilayers. The results show that the strain relaxation mechanism of the non-implanted Si1-xGex epilayers is different from that of the As ion-implanted Si1-xGex epilayers.