Time-Frequency Analysis of Nonlinear Systems: The Skeleton Linear Model and the Skeleton Curves

The joint time-frequency analysis method is adopted to study the nonlinear behavior varying with the instantaneous response for a class of S.D.O.F nonlinear system. A time-frequency masking operator, together with the conception of effective time-frequency region of the asymptotic signal are defined here. Based on these mathematical foundations, a so-called skeleton linear model (SLM) is constructed which has similar nonlinear characteristics with the nonlinear system. Two skeleton curves are deduced which can indicate the stiffness and damping in the nonlinear system. The relationship between the SLM and the nonlinear system, both parameters and solutions, is clarified. Based on this work a new identification technique of nonlinear systems using the nonstationary vibration data will be proposed through time-frequency filtering technique and wavelet transform in the following paper.

Influence of Surface Stress on Frequency of Microcantilever-Based Biosensors (vol 10, pg 307, 2004)

Microcantilever-based biosensors have been found increasing applications in physical, chemical, and biological fields in recent years. When biosensors are used in those fields, surface stress and mass variations due to bio-molecular binding can cause the microcantilever deform or the shift of frequency. These simple biosensors allow biologists to study surface biochemistry on a micro or nano scale and offer new opportunities in developing microscopic biomedical analysis with unique characteristics. To compare and illustrate the influence of the surface stress on the frequency and avoid unnecessary and complicated numerical solution of the resonance frequency, some dimensionless numbers are derived in this paper by making governing equations dimensionless. Meanwhile, in order to analyze the influence of the general surface stress on the frequency, a new model is put forward, and the frequency of the microcantilever is calculated by using the subspace iteration method and the Rayleigh method. The sensitivity of microcantilever is also discussed. (19 refs.)

Identification of nonlinear dynamic systems: Time-frequency filtering and skeleton curves

The nonlinear behavior varying with the instantaneous response was analyzed through the joint time-frequency analysis method for a class of S. D. O. F nonlinear system. A masking operator an definite regions is defined and two theorems are presented. Based on these, the nonlinear system is modeled with a special time-varying linear one, called the generalized skeleton linear system (GSLS). The frequency skeleton curve and the damping skeleton curve are defined to describe the main feature of the non-linearity as well. Moreover, an identification method is proposed through the skeleton curves and the time-frequency filtering technique.

Identification of Nonlinear Systems Through Time-Frequency Filtering Technique

In the previous paper, a class of nonlinear system is mapped to a so-called skeleton linear model (SLM) based on the joint time-frequency analysis method. Behavior of the nonlinear system may be indicated quantitatively by the variance of the coefficients of SLM versus its response. Using this model we propose an identification method for nonlinear systems based on nonstationary vibration data in this paper. The key technique in the identification procedure is a time-frequency filtering method by which solution of the SLM is extracted from the response data of the corresponding nonlinear system. Two time-frequency filtering methods are discussed here. One is based on the quadratic time-frequency distribution and its inverse transform, the other is based on the quadratic time-frequency distribution and the wavelet transform. Both numerical examples and an experimental application are given to illustrate the validity of the technique.

Influence of dielectric properties of a substrate upon plasmon resonance spectrum of supported Ag nanoparticles

Plasmon resonance spectra of supported Ag nanoparticles are studied by depositing the particles on different substrates. It was found that the dielectric properties of the substrates have significant effects on the spectral line shape, except the resonance frequency. Beyond the plasmon resonance band, the spectral shape is mainly governed by the dielectric function, particularly its imaginary part, of the substrate. The plasmon resonance band, on the other hand, may be severely distorted if the substrate is absorbing strongly.

基于振幅稳定的原点反共振振动机动力学分析及其控制

利用反共振原理可有效减小振动机械对基础的作用,提高振动机械的寿命。建立了原点反共振振动机的动力学模型,阐明了其工作原理。以工作体和下质体振幅稳定为核心,分析了各系统参数一定时质量比和反共振频率比对系统振幅稳定性的影响情况,得到了作为组合参数时质量比和反共振频率比分别与上下质体动力放大因子的关系曲面,由此可得到满足工艺要求并能保证振幅稳定的参数区间,为各类反共振振动机设计提供了重要依据。研究了物料质量波动对系统振幅稳定性的影响和反共振点的漂移情况,揭示了对反共振机激振频率进行控制的必要性。在合理动力学参数组合的前提下通过引入控制技术,有效地提高了反共振振动机的工作机体和下质体的振幅稳定性。

Electron quantum path tuning and isolated attosecond pulse emission driven by a waveform-controlled multi-cycle laser field

We investigate high-order harmonic emission and isolated attosecond pulse (IAP) generation in atoms driven by a two-colour multi-cycle laser field consisting of an 800 nm pulse and an infrared laser pulse at an arbitrary wavelength. With moderate laser intensity, an IAP of similar to 220 as can be generated in helium atoms by using two-colour laser pulses of 35 fs/800 nm and 46 fs/1150 nm. The discussion based on the three-step semiclassical model, and time-frequency analysis shows a clear picture of the high-order harmonic generation in the waveform-controlled laser field which is of benefit to the generation of XUV IAP and attosecond electron pulses. When the propagation effect is included, the duration of the IAP can be shorter than 200 as, when the driving laser pulses are focused 1 mm before the gas medium with a length between 1.5 mm and 2 mm.

Design of a fibre-optic disc accelerometer: theory and experiment

Mechanical principles of fibre-optic disc accelerometers (FODA) different from those assumed in previous calculation methods are presented. An FODA with a high sensitivity of 82 rad/ g and a resonance frequency of 360 Hz is designed and tested. In this system, the minimum measurable demodulation phase of the phase-generated carrier (PGC) is 10(-5) rad, and the minimum acceleration reaches 120 ng theoretically. This kind of FODA, with its high responsivity, all-optic-fibre configuration, small size, light weight and stiff shell housing, ensures effective performance in practice.

Mode softening in charge-density excitations of a two-dimensional electron gas driven by Rashba spin-orbit interaction

The electron density response of a uniform two-dimensional (2D) electron gas is investigated in the presence of a perpendicular magnetic field and Rashba spin-orbit interaction (SOI). It is found that, within the Hartree-Fock approximation, a charge density excitation mode below the cyclotron resonance frequency shows a mode softening behavior, when the spin-orbit coupling strength falls into a certain interval. This mode softening indicates that the ground state of an interacting uniform 2D electron gas may be driven by the Rashba SOI to undergo a phase transition to a nonuniform charge density wave state.

Charge-density and spin-density excitations in a two-dimensional electron gas with Rashba spin-orbit coupling

We study theoretically the charge-density and spin-density excitations in a two-dimensional electron gas in the presence of a perpendicular magnetic field and a Rashba type spin-orbit coupling. The dispersion and the corresponding intensity of excitations in the vicinity of cyclotron resonance frequency are calculated within the framework of random phase approximation. The dependence of excitation dispersion on various system parameters, i.e., the Rashba spin-orbit interaction strength, the electron density, the Zeeman spin splitting, and the Coulomb interaction strength is investigated.

In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators.

Unattended ground sensor system based on fiber optic disk accelerometer

The basic principle and critical characteristics of unattended ground sensors (UGS) based on fiber optic disk accelerometers are introduced. Mechanical principles of fiber optic disk accelerometers (FODA) and calculation methods are presented. An FODA with a high sensitivity of 120rad/g and a resonance frequency of 300Hz is designed and used for detection in military affair.

Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition (LPCVD) are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems (MEMS) devices, especially in high resonance frequency (high-f) and high quality factor (high-Q MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process (> 1000℃), and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.

Study of the capacitance coupling in accelerators

The relation between the input impedance and the characteristic parameters of a cavity, such as the resonance frequency, shunt impedance and. the quality factor, has been obtained based on the equivalent circuit of the cavity and the coupling system. Using the matching condition, the ratio of coupling capacitance to the equivalent capacitance of the cavity can be acquired as a function of the characteristic parameters of the cavity, the value of the coupling capacitance can be obtained with a help of a numerical simulation and the perturbation theory, and then the perfect matching between the cavity and the transmission line can be procured. The application of these results on a model cavity is presented too.