Theoretical studies of product polarization and state distributions of the H+HCl reaction

The angular momentum polarization and rotational state distributions of the H-2 and HCl products from the H + HCl reaction are calculated at a relative translational energy of 1.6 eV by using quasiclassical trajectories on two potential energy surfaces, one from G3 surface [T.C. Allison et al., J. Phys. Chem. 100 (1996) 13575], and the other from BW2 surface [W. Bian, H.-J. Werner, J. Chem. Phys. 112 (2000) 220]. Product rotational distributions obtained on the G3 potential energy surface (PES) are much closer to the experimental results (P.M. Aker et al., J. Chem. Phys. 90 (1989) 4795; J. Chem. Phys. 90 (1989) 4809) than the distributions calculated on the BW2 PES. The distributions of P(phi(r)) for the H-2 and HCl products obtained on the G3 PES are similar, whereas the rotational alignment effect of the H-2 product is stronger than that of the HCl product. In contrast to the polarization distributions obtained on the G3 PES, the rotational alignment effect of the two products calculated on the BW2 PES is similar. However, the abstraction reaction is dominated by out-of-plane mechanisms, while the exchange reaction is dominated by in-plane mechanisms. The significant difference of the product rotational polarization obtained on the G3 and BW2 PESs implies that the studies of the dynamical stereochemistry can provide a sensitive test for the accuracy of the PES. (C) 2002 Elsevier Science B.V. All rights reserved.

Nonadiabatic photodissociation dynamics

The photodissociation dynamics of the triatomic (or pseudo-triatomic) system in the nonadiabatic multiple electronic states is investigated by employing a time-dependent quantum wavepacket method, while the time propagation of the wave packet is carried out using the split-operator scheme. As a numerical example, the photodissociation dynamics of CH,l in three electronic states (1)Q(1)(A'), (1)Q(1)(A"), and (3)Q(0+) is studied and CH3I is treated as a pseudotriatomic model. The absorption spectra and product vibrational state distributions are calculated and compared with previous theoretical work. (C) 2004 Wiley Periodicals, Inc.

A velocity map ion-imaging study on ketene photodissociation at 208 and 213 nm: Rotational dependence of product angular anisotropy

Photodissociation dynamics of ketene following excitation at 208.59 and 213.24 nm have been investigated using the velocity map ion-imaging method. Both the angular distribution and translational energy distribution of the CO products at different rotational and vibrational states have been obtained. No significant difference in the translational energy distributions for different CO rotational state products has been observed at both excitation wavelengths. The anisotropy parameter beta is, however, noticeably different for different CO rotational state products at both excitation wavelengths. For lower rotational states of the CO product, beta is smaller than zero, while beta is larger than zero for CO at higher rotational states. The observed rotational dependence of angular anisotropy is interpreted as the dynamical influence of a peculiar conical intersection between the B-1(1) excited state and (1)A(2) state along the C-S-I coordinate.

Steady-state crack growth and fracture work based on the theory of mechanism-based strain gradient plasticity

Mode I steady-state crack growth is analyzed under plane strain conditions in small scale yielding. The elastic-plastic solid is characterized by the mechanism-based strain gradient (MSG) plasticity theory [J. Mech. Phys. Solids 47 (1999) 1239, J. Mech. Phys. Solids 48 (2000) 99]. The distributions of the normal separation stress and the effective stress along the plane ahead of the crack tip are computed using a special finite element method based on the steady-state fundamental relations and the MSG flow theory. The results show that during the steady-state crack growth, the normal separation stress on the plane ahead of the crack tip can achieve considerably high value within the MSG strain gradient sensitive zone. The results also show that the crack tip fields are insensitive to the cell size parameter in the MSG theory. Moreover, in the present research, the steady-state fracture toughness is computed by adopting the embedded process zone (EPZ) model. The results display that the steady-state fracture toughness strongly depends on the separation strength parameter of the EPZ model and the length scale parameter in the MSG theory. Furthermore, in order for the results of steady crack growth to be comparable, an approximate relation between the length scale parameters in the MSG theory and in the Fleck-Hutchinson strain gradient plasticity theory is obtained.

Asymptotic analysis of plane-strain mode I steady-state crack growth in transformation toughening ceramics (II)

Based on a constitutive law which includes the shear components of transformation plasticity, the asymptotic solutions to near-tip fields of plane-strain mode I steadity propagating cracks in transformed ceramics are obtained for the case of linear isotropic hardening. The stress singularity, the distributions of stresses and velocities at the crack tip are determined for various material parameters. The factors influencing the near-tip fields are discussed in detail.

Numerical Analysis of the Effects of Free-Stream Thermo-Chemical State on the Test Model Flow Field in High-Enthalpy Tunnel

The effects of the free-stream thermo-chemical state on the test model flow field in the high-enthalpy tunnel are studied numerically. The properties of the free-stream, which is in thermo-chemical non-equilibrium, are determined by calculating the nozzle flow field. A free-stream with total enthalpy equal to the real one in the tunnel while in thermo-chemical equilibrium is constructed artificially to simulate the natural atmosphere condition. The flow fields over the test models (blunt cone and Apollo command capsule model) under both the non-equilibrium and the virtual equilibrium free-stream conditions are calculated. By comparing the properties including pressure, temperature, species concentration and radiation distributions of these two types of flow fields, the effects of the non-equilibrium state of the free-stream in the high-enthalpy shock tunnel are analyzed.

Diffraction of an ultrashort pulsed beam with arbitrary polarization state from a volume holographic grating in LiNbO3 crystals

Based on a modified coupled wave theory of Kogelnik, we have studied the diffraction of an ultrashort pulsed beam with an arbitrary polarization state from a volume holographic grating in photorefractive LiNbO3 crystals. The results indicate that the diffracted intensity distributions in the spectral and temporal domains and the diffraction efficiency of the grating are both changed by the polarization state and spectral bandwidth of the input pulsed beam. A method is given of choosing the grating parameters and input conditions to obtain a large variation range of the spectral bandwidth of the diffracted pulsed beam with an appropriate diffraction efficiency. Our study presents a possibility of using a volume holographic grating recorded in anisotropic materials to shape a broadband ultrashort pulsed beam by modulating its polarization state.

Suckers (Fish, Catostomidae) from the Eocene of China account for the family's current disjunct distributions

Unequivocal Eocene suckers from China are for the first time reported here. This discovery demonstrates that catostomids of the Eocene Epoch (some 55-35 Ma ago) are scattered widely on mainland Asia as well as western North America. The present day disjunct distribution pattern of catostomids, with 68 extant species widespread in North America and the northern part of Middle America and only two in the restricted areas of Asia, is the result of their post-Eocene decline in Asia due to the competitive pressure from cyprinids, their Late Cenozoic radiation in North America, and the vicariant and dispersal events triggered by the changed biogeographic landscape. All of these prove to be a historical product of the geological, biological, and climatic changes throughout the Cenozoic.

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.