Dislocation core effect scattering in a quasitriangle potential well

A theory of scattering by charged dislocation lines in a quasitriangle potential well of AlxGa1-xN/GaN heterostructures is developed. The dependence of mobility on carrier sheet density and dislocation density is obtained. The results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given.

Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications

A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.

Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

InN films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photoluminescence and absorption measurements. The energy positions of absorption edge as well as photoluminescence peak of these InN samples with electron concentration above 10(18) cm(-3) show a distinct S-shape temperature dependence. With a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. The exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in InN with high electron concentrations.

Topological objects in two-gap superconductor

We discuss the non-Abelian topological objects, in particular the non-Abrikosov vortex and the magnetic knot made of the twisted non-Abrikosov vortex, in two-gap superconductor. We show that there are two types of non-Abrikosov vortex in Ginzburg-Landau theory of two-gap superconductor, the D-type which has no concentration of the condensate at the core and the N-type which has a non-trivial profile of the condensate at the core, under a wide class of realistic interaction potential. We prove that these non-Abrikosov vortices can have either integral or fractional magnetic flux, depending on the interaction potential. We show that they are described by the non-Abelian topology pi(2)(S-2) and pi(1)(S-1), in addition to the well-known Abelian topology pi(1)(S-1). Furthermore, we discuss the possibility to construct a stable magnetic knot in two-gap superconductor by twisting the non-Abrikosov vortex and connecting two periodic ends together, whose knot topology pi(3)(S-2) is described by the Chern-Simon index of the electromagnetic potential. We argue that similar topological objects may exist in multi-gap or multi-layer superconductors and multi-component Bose-Einstein condensates and superfluids, and discuss how these topological objects can be constructed in MgB2, Sr2RuO4, He-3, and liquid metallic hydrogen.