Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells

Excitonic states in AlxGa1-xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.

Fourier transformation study of the Franz-Keldysh Oscillation in SIN+ GaAs structures

Fourier transformation (FT) method has been used in the theoretical lineshape analysis of the Franz-Keldysh Oscillation (FKO) in detail by numerical simulation. The FKO of a set of GaAs SIN+ samples was obtained in photoreflectance measurements. The FT spectra of a part of the samples,including of the real part,imaginary part, and mode of the FT,are well consistent with the theoretical lineshapes. The ratio of the square root of the reduced mass of the light hole (LH) to the heavy hole (HH), root mu(1)/root mu(h), obtained in the analysis was in the range of 0.805 to 0.816 for different samples. In addition,the built-in electric field F-1, and the modulation field delta F = F-1 - F-2 induced by photo-modulation were also obtained in the analysis. However,for a few samples great difference was found in the lineshape of the real part and imaginary part of their FT spectra from the theoretical lineshape. In this case the mode of the FT spectra still can be used to obtain useful information.

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer

再入飞行器湍流尾迹流场研究

再入飞行器湍流尾迹流场状况，直接系统到飞行器的雷达散射特性。对再入飞行器湍流尾迹等离子体场理论模型，试图通过湍流模式理论来表达，即使用k-ε-g模型方程来封闭平均化的全Navier-Stokes方程，从而准确获得流动平均场和脉动场住处。使用的N－S平均议程由质量加权平均过程产生，湍流模型方程也经过可压缩性能修正。真实气体效应重点考察空气处于局部热化学平衡状态。流动控制方程运用一个二阶TVD格式有限体积法求解。以一典型小钝锥体零攻角再入飞行为例，计算了在两高程（H = 40 km和H = 30 km）条件下的高超声速湍流尾迹流场。获得的尾迹流场参数与流动物理状况符合，并且湍流脉动参数与已有相应的实验结果定性一致，初步证实该方法合理。

Photoelectric characteristics of metal/InGaN/GaN heterojunction structure

A heterojunction structure photodetector was fabricated by evaporating a semitransparent Ni/Au metal film oil the InGaN/GaN structure. The photocurrent (PC) spectra show that both the Schottky junction (NiAu/InGaN) and the InGaN/GaN isotype heterojunction contribute to the PC signal which suggests that two junctions are connected in series and result in a broader spectral response of the device. Secondary electron, cathodoluminescence and electron-beam-induced current images measured from the same area of the edge surface clearly reveal the profile of the layer structure and distribution of the built-in electric field around the two junctions. A band diagram of the device is drawn based oil the consideration of the polarization effect at the InGaN/GaN interface. The analysis is consistent with the physical mechanism of a tandem structure of two junctions connected in series.

A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure

Complex Fourier transformation (CFT) has been employed to analyse contactless electroreflectance (CER) spectra from an undoped-n(+) GaAs structure with various ac modulations and dc bias voltages. The CFT spectra of CER have been compared with those of photoreflectance (PR). It has been found that the CER non-flat modulation is between the built-in electric field and a larger electric field which increases with the modulation voltage. The result has been explained by the screening of the applied modulation electric field in one of the two half modulation cycles and the trapping of electrons in surface states in the other half modulation cycle. The dc bias does not change the CER spectra, hence their CFT spectra. This is because of the screening of the applied dc bias electric field.

Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance

Self-assembled InAs quantum dots (QDs) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ML) InAs on surfaces of the undoped-n(+) (UN+) type GaAs structure. Room temperature contactless electroreflectance (CER) was employed to study the built-in electric field and the surface Fermi level pinning of these QD-covered UN+ GaAs samples. The CER results show that 1.6 ML InAs QDs on GaAs do not modify the Fermi level, whereas for samples with more than 1.6 ML InAs coverage, the surface Fermi level is moved to the valence band maximum of GaAs by about 70 meV (which is independent of the InAs deposition thickness) compared to bare GaAs. It is concluded that the modification of InAs coverage on the Fermi level on the GaAs surface is due to the QDs, rather than to the wetting layer. (C) 2003 American Institute of Physics.

Quantum-confined Stark effects of InAs/GaAs self-assembled quantum dot

Quantum-confined Stark effects in InAs/GaAs self-assembled quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated in the presence of perpendicular and parallel electric field. In our calculation, the effect of finite offset, valence band mixing, and strain are all taken into account. The results show that the perpendicular electric field weakly affects the electron ground state and hole energy levels. The energy levels are affected strongly by the parallel electric field. For the electron, the energy difference between the ground state and the first excited state decreases as electric field increases. The optical transition energies have clear redshifts in electric field. The theoretical results agree well with the available experimental data. Our calculated results are useful for the application of quantum dots to photoelectric devices. (C) 2000 American Institute of Physics. [S0021-8979(00)11001-7].

The design and verification of FPGA CAD toolset

This paper introduces a complete CAD toolset for the implementation of digital logic in a Field-Programmable Gate Array (FPGA) platform. Compared with existing academic toolsets, this toolset introduces formal verification in each step of the tool flow, especially the formal verification of the configuration bitstream. The FPGA CAD tool verification flow using Formality is presented in detail. Using plug-in technology, we have developed an integrated FPGA design kit to incorporate all tools together.

An analysis of the performance of a new high-speed single-way analog switch

This paper introduces a new highspeed single-way analog switch which has both highspeed high-resolution mono-direction analog transmission gate function and high-speed digital logic gate function with normal bipolar technology. The analysis of static and transient switching performances as an analog transmission gate is emphasized in the paper. In order to reduce the plug-in effect on high-speed high-resolution systems, an optimum design scheme is also given. This scheme is to achieve accelerated dynamic response with very low bias power dissipation. The analysis of PSPICE simulation as well as the circuit test results confirms the feasibility of the scheme. Now, the circuit has been applied effectively to the designs of novel highspeed A/D and D/A converters.

A one-way MOS analog switch

In this paper, a one-way NMOS analog switch featuring a low plug-in consumption is presented. The performances of analog switch, especially the performances of source follower are simulated under different conditions with PSPICE. Simulation results and factors affecting the deviation between input and output are analyzed, some advice on how to reduce the deviation between input and output is given. Ar the end of the paper, voltage relationship between input and output of the analog switch is obtained. Function of first degree, Vout = kVin + V0, is used to approximate the voltage relationship. The simulation results anti the value achieved from the approximation equation are given as well.

Structure and electrochemical characteristics of RENi3 alloy

The RENi3 (RE = La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Y) series compounds have been prepared by arc melting constituent elements under Ar atmosphere. X-ray diffraction (XRD) analysis reveals that the as-prepared alloys have different lattice parameters and cell volumes, depending on different rare earth (RE) element. The electrochemical characteristics, including the electrochemical capacity, P-C isotherms, high rate chargeability (HRC) and high-rate dischargeability (HRD), of these alloys have been studied through the charge-discharge recycle testing at different temperatures, charge currents and discharge currents. The results show that YNi3 has the largest cell volume, smallest density, and moreover, it shows more satisfactory electrochemical characteristics than other alloys, including discharge capacity, HRC, HRD and low temperature dischargeablity.

基于网络化虚拟仪器的机器人传感器实验平台

设计了基于网络化虚拟仪器的多节点机器人传感器实验平台系统,利用COM、软件插件等技术开发了虚拟控件和信号处理软件模块,用户可通过PPL创建自定义的信号处理模块,为进行面向智能机器人控制的传感器测试、标定、组网等奠定了基础。

液压系统在水下机器人中的应用

结合典型的缆控水下机器人 ,介绍了缆控水下机器人液压系统的发展状况、特点和已取得的一些研究成果 ,并指出了发展大功率液压推进系统的重要意义。

随机系统模型参数在线辨识的一种算法及负荷预报

本文提出了一种简化的多变量随机系统状态模型参数在线辨识方法。与最小二乘自适应递推算法比较,不仅需要辨识的参数减少,而且针对一类模型参数缓慢变化的系统,可以通过选择不同的遗忘因子序列来控制参数变化的幅度,解决了电力系统负荷预报中季节模型的老化问题。本方法基于带有随机噪声状态模型的典范型,大大节省了计算机的运算量和存贮容量,适于微处理机的在线应用。