Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N-2/O-2/Ar gas flow rate.

Preliminary Investigations on Low-Pressure Laminar Plasma Spray Processing

The usual plasma spraying methods often involve entrainment of the surrounding air into the turbulent plasma core and result in coated materials having relatively high porosity and low adhesive strength. Therefore, exploration of new plasma spraying methods for fabricating high quality coatings to meet the requirement of special applications will be quite important. In this study, an alternative plasma spraying method, i.e. the low-pressure laminar plasma spraying process, is investigated and used in an attempt for spraying thermal barrier coatings (TBCs). Investigations on the characteristics of the laminar plasma jets, feeding methods for the ceramic powder and the formation process of the individual quenched splats have been carried out. The properties of the TBCs sprayed by laminar plasma jet process, such as the adhesive strength at the interface of the ceramic coating/bond coat, the surface roughness and microstructure, are examined by tensile tests and scanning electron microscope (SEM) observations.

What Do We Know about Long Laminar Plasma Jets?

Silent and stable long laminar plasma jets can be generated in a rather wide range of working parameters. The laminar flow state can be maintained even if considerable parameter fluctuations exist in the laminar plasma jet or if there is an impact of laterally injected particulate matter and its carrier gas. The attractive special features of laminar plasma jets include extremely low noise level, less entrainment of ambient air, much longer and adjustable high-temperature region length, and smaller axial gradient of plasma parameters. Modeling results show that the laminar plasma jet length increases with increasing jet inlet velocity or temperature and the effect of natural convection on laminar plasma jet characteristics can be ignored, consistent with experimental observations. The large difference between laminar and turbulent plasma jet characteristics is revealed to be due to their different laws of surrounding gas entrainment. Besides the promising applications of the laminar plasma jet to remelting and cladding strengthening of the metallic surface and to thermal barrier coating preparation, it is expected that the laminar plasma jet can become a rather ideal object for the basic studies of thermal plasma science owing to the nonexistence of the complexity caused by turbulence.

Comparative Observation of DC Arc Plasma Jets and Their Arc Root Behaviors at Reduced Pressure

Experimentally observed, results are presented for the DCarcplasmajets and theirarc-rootbehaviors generated atreduced gas pressure and without or with an' applied magnetic field. Pure argon, argon -hydrogen or argon-nitrogen mixture is used as the plasma-forming gas. A specially designed copper mirror is constructed and used for better observing the arc-root behavior on the anode surface of the DC non-transferred arcplasma torch. It is shown that for the cases without applied magnetic field, the laminar plasmajets are stable and approximately axisymmetrical. The arc-root attachment on the anode surface is completely diffusive when argon is used as the plasma-forming gas, while the arc-root attachment often becomes constrictive when hydrogen or nitrogen is added into the argon. When an external magnetic field is applied, the arcroot tends to rotate along the anode surface of the non-transferred arcplasma torch.

Characteristics of Laminar and Turbulent Argon Plasma Jets Impinging Normally Upon a Workpiece in Ambient Air

Modeling results are presented concerning the characteristicsoflaminar and turbulentargonplasmajetsimpingingnormally upon a flat plate (workpiece) in ambient air. It is found that the presence of the flat plate significantly enhances the entrainment rate of ambient air into the jets and affects on the flow and temperature fields in the near-plate region of the jets. At comparatively large distances between the plate and the jet inlet, the axial gradients of the plasma parameters in the laminarplasmaimpinging-jets assume values much less than those in the turbulentplasmaimpinging-jets.

Modeling of a Laminar DC Arc Plasma Torch

In recent years, stable and long laminarplasma jets have been successfully generated, and thus it is possible to achieve low-noise working surroundings, better process repeatability and controllability, and reduced metal-oxidation degree in plasma materials processing. With such a recent development in thermal plasma science and technology as the main research background, modeling studies are performed concerning the DCarcplasmatorch for generating the long laminar argon plasma jet. Two different two-dimensional modeling approaches are employed to deal with the arc-root attachment at the anode surface. The first approach is based on circumferentially uniform arc-root attachment, while the second uses the so-called fictitious anode method. Modeling results show that the highest temperature and maximum axial-velocity at the plasmatorch exit are ～15000 K and ～1100 m/s, respectively, for the case with arc current of 160 A and argon flow rate of 1.95×10{sup}(-4)kg/s.

Visualization of molecule interaction between antigen and antibody - One of ellipsometric imaging applications

It is to investigate molecule interactions between antigen and antibody with ellipsometric imaging technique and demonstrate some features and possibilities offered by applications of the technique. Molecule interaction is an important interest for molecule biologist and immunologist. They have used some established methods such as immufluorcence, radioimmunoassay and surface plasma resonance, etc, to study the molecule interaction. At the same time, experimentalists hope to use some updated technique with more direct visual results. Ellipsometric imaging is non-destructive and exhibits a high sensitivity to phase transitions with thin layers. It is capable of imaging local variations in the optical properties such as thickness due to the presence of different surface concentration of molecule or different deposited molecules. If a molecular mono-layer (such as antigen) with bio-activity were deposited on a surface to form a sensing surface and then incubated in a solution with other molecules (such as antibody), a variation of the layer thickness when the molecules on the sensing surface reacted with the others in the solution could be observed with ellipsometric imaging. Every point on the surface was measured at the same time with a high sensitivity to distinguish the variation between mono-layer and molecular complexes. Ellipsometric imaging is based on conventional ellipsometry with charge coupled device (CCD) as detector and images are caught with computer with image processing technique. It has advantages of high sensitivity to thickness variation (resolution in the order of angstrom), big field of view (in square centimeter), high sampling speed (a picture taken within one second), and high lateral resolution (in the order of micrometer). Here it has just shown one application in study of antigen-antibody interaction, and it is possible to observe molecule interaction process with an in-situ technique.

What Do We Know about Long Laminar Plasma Jets?

Silent and stable long laminar plasma jets can be generated in a rather wide range of working parameters. The laminar flow state can be maintained even if considerable parameter fluctuations exist in the laminar plasma jet or if there is an impact of laterally injected particulate matter and its carrier gas. The attractive special features of laminar plasma jets include extremely low noise level, less entrainment of ambient air, much longer and adjustable high-temperature region length, and smaller axial gradient of plasma parameters. Modeling results show that the laminar plasma jet length increases with increasing jet inlet velocity or temperature and the effect of natural convection on laminar plasma jet characteristics can be ignored, consistent with experimental observations. The large difference between laminar and turbulent plasma jet characteristics is revealed to be due to their different laws of surrounding gas entrainment. Besides the promising applications of the laminar plasma jet to remelting and cladding strengthening of the metallic surface and to thermal barrier coating preparation, it is expected that the laminar plasma jet can become a rather ideal object for the basic studies of thermal plasma science owing to the nonexistence of the complexity caused by turbulence.

Exchange energy shifts under dense plasma conditions

The variation of the energy interval between the intercombination line ( 1s2p(P-3(1))-> 1s(2)) and the resonance line ( 1s2p(P-1(1))-> 1s(2)) of He-like aluminium with plasma density and temperature is investigated. Since such energy interval is equivalent to the exchange energy of the state 1s2p(P-3(1)), we consider the dependence of this energy shift on the plasma environment. It was found that the shifts of exchange energy increase ( decrease) with the increase of electron density ( electron temperature), and the shifts of exchange energy become more sensitive to the electron density as the electron temperature decreases, i. e. in the strongly coupled plasma regime. An approximately linear relation is found between the shifts of exchange energy and the electron density. The results show that dense plasma effects are very important for the simulation of the spectral fine structure. The relative shifts between the intercombination ( 1s2p(P-3(1))-> 1s(2)) and the resonance line ( 1s2p(P-1(1))-> 1s(2)) are discussed for diagnostic applications.

Direct acceleration of solid-density plasma bunch by ultraintense laser

The interaction of a petawatt laser with a small solid-density plasma bunch is studied by particle-in-cell simulation. It is shown that when irradiated by a laser of intensity >10(21) W/cm(2), a dense plasma bunch of micrometer size can be efficiently accelerated. The kinetic energy of the ions in the high-density region of the plasma bunch can exceed ten MeV at a density in the 10(23)-cm(-3) level. Having a flux density orders of magnitude higher than that of the traditional charged-particle pulses, the laser-accelerated plasma bunch can have a wide range of applications. In particular, such a dense energetic plasma bunch impinging on the compressed fuel in inertial fusion can significantly enhance the nuclear-reaction cross section and is thus a promising alternative for fast ignition.

Generation of 1.5-12 ns width-tunable 532 nm pulses by adopting laser-induced plasma shutter technique

The pulse-shaping technique has found widespread applications in nonlinear optics and material processing. Experimental research on laser-induced plasma shutter to control the 532 nm pulse width is conducted. The impacts of the total pulse output energy on pulse compression are investigated, and a useful conclusion can be drawn that there exists an optimal value of pulse energy at which the shortest output pulse of 3.23 ns can be obtained without a device for delay-time. Once the device for delay-time is employed to change the optical differences between two laser paths, the pulse width can be further shortened to 1.51 ns. In short, the 1.5-12 ns width-tunable 532 nm laser pulses have been obtained by adopting the laser-induced plasma shutter technique. (C) 2007 Elsevier GmbH. All rights reserved.

Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment

We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO H films achieves the order of 10(-3) cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V-O-H complex and the interstitial hydrogen H-i. Moreover, the annealing data indicate that H-i is unstable in ZnO, while the V-O-H complex remains stable on the whole at 400 degrees C, and the latter diffuses out when the annealing temperature increases to 500 degrees C. These results make ZnO H more attractive for future applications as transparent conducting electrodes.

Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V-oc of 0.94 eV.

Zinc phthalocyanine (ZnPc) incorporated into silicon matrix grown by plasma enhanced chemical vapor deposition (PECVD)

Hybrid composites composed of zinc phthalocyanine embedded in silicon matrixes have attracted attention because of the potential for solar energy conversion. We produce hybrid composites by thermal evaporation for the plithalocyanine and PECVD (Plasma Enhanced Chemical Vapor Deposition) for the silicon matrix. Deposition of ZnPc/a-Si(amorphous silicon) composites was achieved in a sequential manner. The compound films were characterized by optical transmittance spectra and photoconductivity measurement. The optical transmittance measurements were carried out in the visible region (500 - 800 nm). Compared to pure silicon film, the photosensitivity of compound functional films was enhanced by one order of magnitude. This demonstrates the Si sensitized by adding ZnPc.

Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO

Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.