Reply to van Oven: Suggestions and caveats for naming mtDNA haplogroup

The authors thank all subjects for their participation and Mr. Wen-Zhi Wang for helpful assistance with the data analysis. This study was supported in part by grants (30725044) from the National Natural Science Foundation of China.

汉字阅读中的字形、字音、字义及频率效应的研究

Unlike alphabetic languages, Chinese language is ideographical writing system. Each Chinese character is single-syllable and usually has a direct meaning. So Chinese characters are a kind of valuable experimental material used for research on reading and comparisons of the reading mechanism of different language. In this paper, the normal persons and the patients with semantic dementia were respectively scheduled for two parts of experimental studies on the orthographic, phonologic, semantic and frequency effects of reading of Chinese characters. The Stroop-like character-picture interference experimental paradigm was used to investigate the orthographic, phonologic, semantic and frequency effects of Chinese characters on picture naming when they were presented with pictures to normal persons. The results indicated that the orthographic facilitation effect, phonologic facilitation effect, and semantic interference effect occurred at different SOA values. The orthographic and phonologic facilitation effects were independent. It was for the first time shown that the interaction between orthographic variable and semantic variable occurred when the high-frequency Chinese characters were read. Phonologic representation was activated quicker than semantic representation, by comparison of their SOA. Generally, it means that there is reading without meaning in Chinese character among the normal persons. The orthographic, phonologic, semantic, frequency and concrete effects of Chinese characters were further investigated among the dementia patients with DAT(dementia of Alzheimer's type disease) or CVA or both. They all have an impaired semantic memory. The results showed that patients with dementia could read the names of the pictures aloud while they could not name them or match them with a right character correctly. This is reading impairment without meaning in Chinese among the dementia patients. Meanwhile, they had a selective reading impairment and more LARC(a legitimate alternative reading of components) mistakes especially when reading low-frequency irregular, low-frequency inconsistent and abstract Chinese characters. With the patients' semantic impairment developed, their ability to read the pictures names would remain whereas their ability to read low-frequency irregular and low-frequency inconsistency Chinese characters was reduced. These results indicated that low-frequency irregular Chinese characters can be read correctly only when it is supported by their semantic information. Based on the above results of reading without meaning and of reading of low-frequency irregular Chinese characters supported by their semantic information, it is reasonable to suggest that at least two routes are involved in the process of reading Chinese characters. They are direct phonologic route and indirect semantic route; moreover, the two routes are independent.

Heating characteristics of blunt swept fin-induced shock wave turbulent boundary layer interaction

An experimental study was conducted on shock wave turbulent boundary layer interactions caused by a blunt swept fin-plate configuration at Mach numbers of 5.0, 7.8, 9.9 for a Reynolds number range of (1.0.similar to 4.7) x 10(7)/m. Detailed heat transfer and pressure distributions were measured at fin deflection angles of up to 30 degrees for a sweepback angle of 67.6 degrees. Surface oil flow patterns and liquid crystal thermograms as well as schlieren pictures of fin shock shape were taken. The study shows that the flow was separated at deflection of 10 degrees and secondary separation were detected at deflection of theta greater than or equal to 20 degrees. The heat transfer and pressure distributions on flat plate showed an extensive plateau region followed by a distinct dip and local peak close to the fin foot. Measurements of the plateau pressure and heat transfer were in good agreement with existing prediction methods, but pressure and heating peak measurements at M greater than or equal to 6 were significantly lower than predicted by the simple prediction techniques at lower Mach numbers.

MILU-CG method and the numerical study on the flow around a rotating circular cylinder

A hybrid finite difference method and vortex method (HDV), which is based on domain decomposition and proposed by the authors (1992), is improved by using a modified incomplete LU decomposition conjugate gradient method (MILU-CG), and a high order implicit difference algorithm. The flow around a rotating circular cylinder at Reynolds number R-e = 1000, 200 and the angular to rectilinear speed ratio alpha is an element of (0.5, 3.25) is studied numerically. The long-time full developed features about the variations of the vortex patterns in the wake, and drag, lift forces on the cylinder are given. The calculated streamline contours agreed well with the experimental visualized flow pictures. The existence of critical states and the vortex patterns at the states are given for the first time. The maximum lift to drag force ratio can be obtained nearby the critical states.

Numerical Study on Kerosene Spray in Supersonic Flow

Numerical simulation was conducted to study the kerosene spray characteristics injecting into supersonic cross flow. The verification of the simulation was carried out by experimental Schlieren image, and the agreement was obtained by compared the spray plume pictures. Furthermore, the aerodynamic secondary breakup effect of the supersonic cross flow on the initial droplets was investigated. It was revealed that the initial parent drops were broken up into small drops whose diameter is about O(10) micrometers soon after they entered into the supersonic cross flow. During the appropriate range of initial drop size, the parent droplets would be broken up into small drops with the same magnitude diameter no matter how large the initial drops SMD was.

利用受激发射损耗（STED）显微术突破远场衍射极限

远场光学显微镜受衍射极限分辩率的限制，而近场光学显微镜由于缺乏层析能力，则无法实现超分辨的三维成像，研究了既可突破远场光学显微术的衍射极限分辨率又可实现三维成像的成像技术——受激发射损耗（STED），综述了STED的分辨率与STED光的光强，延迟时间、光斑空间分布等主要参数的关系，以及该技术的最新进展和应用前景。

小尺寸波纹光阑的实验研究

报道了在光路中使用小尺寸波纹光阑代替圆孔光阑的研究结果。应用菲涅耳衍射光强分布理论以及光上光强分布理论对波纹光阑在一定条件下的作用范围进行了分析。用CCD成像系统对实验结果进行记录。结表明实际与理论能较好地吻合。从光路的实际使用效果看，对比圆孔光阑，应用波纹光阑在其作用范围内实现了对光束衍射调制的抑制和填充冈子的提高。

Analytical vectorial structure of hollow Gaussian beams in the far field

The analytical vectorial structure of HGB is investigated in the far field based on the vector plane wave spectrum and the method of stationary phase. The energy flux distributions of HGB in the far-field, which is composed of TE term and TM term, are demonstrated. The physics pictures of HGB is illustrated from the vectorial structure, which is important to understand the theoretical aspects of both scalar and vector HGB propagation. (c) 2008 Optical Society of America.

Some new bounds on eigenvalues of the Hadamard product and the Fan product of matrices

Let A and B be nonsingular M-matrices. A lower bound on the minimum eigenvalue q(B circle A(-1)) for the Hadamard product of A(-1) and B, and a lower bound on the minimum eigenvalue q(A star B) for the Fan product of A and B are given. In addition, an upper bound on the spectral radius rho(A circle B) of nonnegative matrices A and B is also obtained. These bounds improve several existing results in some cases and the estimating formulas are easier to calculate for they are only depending on the entries of matrices A and B. (C) 2009 Elsevier Inc. All rights reserved.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Research on color matching of LED backlight for large-color-gamut LCD application - art. no. 68410Y

Comparing with the conventional CCFL (Cold Cathode Fluorescent Lamp) backlight, three-basic-color LEDs backlight has some advantages such as good color reproduction, long life and lead free etc. Theoretically, the color gamut is determined by x, y coordinates of the three basic colors in CIE chromaticity diagram, and the x, y coordinates of each basic color can derived from the relative spectrum distribution (RSD) of the LED. In this paper, the red, green and blue LEDs' RSD models are established to calculate and analyze the color gamut of a backlight. By simulating those models, the relationships that the color gamut of a LED backlight varies with each color are analyzed, and the optimum combination of three colors is obtained within the given wavelengths ranges. Moreover, the combinations of three colors for the gamut of 115% NTSC and 110% NTSC are plotted in pictures, respectively.

Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures

Comparative electroluminescence (EL) and photoluminescence (PL) measurements were performed on Si/Si0.6Ge0.4 self-assembly quantum dots (QDs) structures. The samples were grown pseudomorphically by molecular beam epitaxy, and PIN diodes for electroluminescence were fabricated. Assisted TEM pictures shows the SiGe self-assembly QDs are platelike. And it showed that the diameters of QDs are in range from 40nm to 140nm with the most in 120nm. Both EL and PL has a wide luminescence peak due to wide distribution of QDs dimensions. At low temperature (T=14K), EL peak has a red shift compared to the corresponding PL peak. Its full-width at half-maximum (FWHM) is about 97meV, a little smaller than that of corresponding PL peak. The reasons of position and FWHM changes of EL peak from QDs have been discussed.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.