Bio-inspired mechanics of reversible adhesion: Orientation-dependent adhesion strength for non-slipping adhesive contact with transversely isotropic elastic materials

Geckos and many insects have evolved elastically anisotropic adhesive tissues with hierarchical structures that allow these animals not only to adhere robustly to rough surfaces but also to detach easily upon movement. In order to improve Our understanding of the role of elastic anisotropy in reversible adhesion, here we extend the classical JKR model of adhesive contact mechanics to anisotropic materials. In particular, we consider the plane strain problem of a rigid cylinder in non-slipping adhesive contact with a transversely isotropic elastic half space with the axis of symmetry oriented at an angle inclined to the surface. The cylinder is then subjected to an arbitrarily oriented pulling force. The critical force and contact width at pull-off are calculated as a function of the pulling angle. The analysis shows that elastic anisotropy leads to an orientation-dependent adhesion strength which can vary strongly with the direction of pulling. This study may suggest possible mechanisms by which reversible adhesion devices can be designed for engineering applications. (C) 2006 Elsevier Ltd. All rights reserved.

A scaling law of photoelectron angular distributions in one-cycle laser pulses

The photoelectron angular distributions (PADs) from above-threshold ionization of atoms irradiated by one-cycle laser pulses satisfy a scaling law. The scaling law denotes that the main features of the PADs are determined by four dimensionless parameters: (1) the ponderomotive number u(p) = U-p/hw, the ponderomotive energy U-p in units of laser photon energy; (2) the binding number E-b = E-b/h(w), the atomic binding energy E-b in units of laser photon energy; (3) the number of absorbed photons q; (4) the carrier-envelope phase phi(0), the phase of the carrier wave with respect to the envelope. We verify the scaling law by theoretical analysis and numerical calculation, compared to that in long-pulse case. A possible experimental test to verify the scaling law is suggested.

Photoelectron angular distributions of molecules in bichromatic laser fields of circular polarization

Photoelectron angular distributions (PADs) from above-threshold ionization of O-2 and N-2 molecules irradiated by a bichromatic laser field of circular polarization are Studied. The bichromatic laser field is specially modulated such that it can be used to mimic a sequence of one-cycle laser pulses. The PADs are greatly affected by the molecular alignment, the symmetry of the initial electronic distribution, and the carrier-envelope phase of the laser pulses. Generally, the PADs do not show any symmetry, and become symmetric about an axis only when the symmetric axis of laser field coincides with the symmetric axis of molecules. This study shows that the few-cycle laser pulses call be used to steer the photoelectrons and perform the selective ionization of molecules. (C) 2008 Elsevier B.V. All rights reserved.

Angular distributions of multiphoton detachment of H- in various infrared laser fields

Using a nonperturbative quantum scattering theory, the photoelectron angular distributions (PADs) from the multiphoton detachment of H- ions in strong, linearly polarized infrared laser fields are obtained to interpret recent experimental observations. In our theoretical treatment, the PADs in n-photon detachment are determined by the nth-order generalized phased Bessel (GPB) functions X-n(Z(f),eta). The advantage of using the GPB scenario to calculate PADs is its simplicity: a single special function (GPB) without any mixing coefficient can express PADs observed by recent experiments. Thus, the GPB scenario can be called a parameterless scenario.

Photoelectron angular distributions from above threshold ionization of hydrogen atoms in strong laser fields

We apply a scattering theory of nonperturbative quantum electrodynamics to study the photoelectron angular distributions (PADs) of a hydrogen atom irradiated by linearly polarized laser light. The calculated PADs show main lobes and jetlike structure. Previous experimental studies reveal that in a set of above-threshold-ionization peaks when the absorbed-photon number increases by one, the jet number also increases by one. Our study confirms this experimental observation. Our calculations further predict that in some cases three more jets may appear with just one-more-photon absorption. With consideration of laser-frequency change, one less jet may also appear with one-more-photon absorption. The jetlike structure of PADs is due to the maxima of generalized phased Bessel functions, not an indication of the quantum number of photoelectron angular momentum states.

Anomaly in photoelectron angular distributions

The recently observed anomaly in photoelectron angular distributions (PADs), the disappearance of the main lobes of PADs which should be usually in the direction of laser polarization, is reinterpreted as a minimum of generalized Bessel functions in the laser-polarization direction with the theory of nonperturbative quantum electrodynamics. The reinterpretation has no artificial fitting parameters and explains more features of the experimentally observed PADs, in contrast to the existing interpretation in which the anomaly is interpreted as a quantum interference of angular momentum partial waves. Some hierarchy anomalies are predicted for further experimental observations.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

A Novel Low-Power Digital Baseband Circuit for UHF RFID Tag with Sensors

A novel low-power digital baseband circuit for UHF RFID tag with sensors is presented in this paper. It proposes a novel baseband architecture and a new operating scheme to fulfill the sensor functions and to reduce power consumption. It is also compatible with the EPC C1G2 UHF RFID protocol. It adopts some advanced low power techniques for system design and circuit design: adaptive clock-gating, multi-clock domain and asynchronous circuit. The baseband circuit is implemented in 0.18um 1P3M standard CMOS process. ne chip area is 0.28 mm(2) excluding test pads. Its power consumption is 25uW under 1.1V power supply.

An 8-b 1-GSmaples/s CMOS cascaded folding and interpolating ADC

This paper presents an 8-bit low power cascaded folding and interpolating analog-to-digital converter (ADC). A reduction in the number of comparators, equal to the number of times the signal is folded, is obtained. The interleaved architecture is used to improve the sampling rate of the ADC. The circuit including a bandgap is implemented in a 0.18-mu m CMOS technology, and measures 1.47 mm X 1.47 mm (including pads). The simulation results illustrate a conversion rate of 1-GSamples/s and a power dissipation of less than 290mW.

Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).