光系统II反应中心吸能和转能的分子机理研究

全文分两部分，(1)．PsⅡ反应中心色素分子光破坏的分子机理研究;(2)．PSⅡ反应中心原初反应的动力学机理研究。 在第一部分中，在分离纯化的光系统Ⅱ反应中心Dl/D2/Cyt b559复合物中，采用高效液相色谱技术，首次发现PSⅡ反应中心去镁叶绿素分子的光照破坏，研究了去镁叶绿素的光破坏机理，观察到PsⅡ反应中心内部存在一个与光化学活性无关的去镁叶绿素分子，从而提供了PSⅡ反应中心存在两条电子传递链的第一个实验证据，提出了去镁叶绿素对PsⅡ反应中心的光保护假说和光合作用反应中心第二条电子传递支路的光保护假说。用高效液相色谱技术还观察到PSⅡ反应中心的6个叶绿素a分子，有三种不同的存在状态，认为PSl反应中心的最小色素组成为每个反应中心含有4个叶绿素a和2个去镁叶绿素。用光破坏的方法证明PsⅡ原初电子供体P680是由两个叶绿素n分子组成，认为P680是以一个二聚体形式存在，首次发现P680的光破坏过程包含失去中心镁原子的反应。 在第二部分中，用皮秒和飞秒时间分辨光谱技术，在PsⅡ颗粒、PsⅡ核心复合物和PSⅡ反应中心三个层次上，研究了PsⅡ原初反应的动力学性质，着重研究电荷分离和PsⅡ反应中心内部的能量传递过程。结果表明，B-胡萝卜素和P680之间的能量传递时间常数为350p8左右，去镁叶绿素a与P680之间的能量传递时间为lOOp8左右，提出了可能的动力学模型。 在目前分歧最大的原初电荷分离时间常数测定这一焦点问题上，得到的初步结果表明PsⅡ反应中心电荷分离时间为3-3.5pa左右，这一结论与文献上报道的21pa不同，丽倾向于支持国际上3p8的观点。

Stimulated luminescence and photo-gated hole burning in BaFCl0.8Br0.2 : Sm2+,Sm3+ phosphors

The photo- and thermo-stimulated luminescence (PSL and TSL) of BaFCl0.8Br0.2:Sm2+,Sm3+ phosphors were investigated. It is found that the stimulated luminescence intensity of Sm2+ is almost equal to that of Sm3+ even if the content of Sm2+ is much lower than that of Sm3+. Only the stimulated luminescence of Sm2+ is observed in the sample in which the content of Sm2+ is much higher than Sm3+, demonstrating that the PSL or TSL efficiency of Sm2+ is much higher than that of Sm3+. This is attributed to the effective overlap of the e-h emission with the absorption of Sm2+ centers which may make the energy transfer from the electron-hole pairs to Sm2+ effectively. In BaFCl0.8Br0.2:Sm2+,Sm3+ the stimulated luminescence is considered to be occurred via the recombination of photoreleased electrons with the [Sm2+ + h] or [Sm3+ + h] complex and the energy transfer from the electron-hole pairs to the luminescence centers (Sm2+ and Sm3+) is concerned to be the major step to determine the stimulated luminescence efficiency. The X-ray-induced stimulated luminescence is compared and connected to the photon gated hole burning. The net result of the two processes is quite similar and may be comparable. It is suggested from the observations of stimulated luminescence that electron migration between Sm2+ and Sm3+ is not the major process, color centers may play an important role in hole burning. The information from stimulated luminescence is helpful for the understanding of the hole burning mechanism. (C) 1999 Elsevier Science Ltd. All rights reserved.

Photostimulated luminescence of AgI clusters in zeolite-Y

AgI clusters in zeolite-Y (AgI/Y) were prepared by Ag+ exchange followed by reaction with NaI in solution. The formation of the clusters was determined by transmission electron microscopy and Auger electron spectroscopy. The clusters were uniform and even in size, 1.0-2.0 nm. The fluorescence spectrum of the clusters consists of two emission bands, which are attributed to AgI and Ag clusters, respectively. Photostimulated luminescence (PSL) is observed by stimulation at 675 or at 840 nm. The PSL spectrum of AgI/Y is consistent with the emission spectrum of Ag clusters and thus the PSL is considered to be caused by the charge transfer or carrier migration from the zeolite framework or from the AgI clusters to the Ag clusters. The appearance of PSL indicates that these materials may find application as a medium for erasable optical memory. (C) 1998 American Institute of Physics. [S0021-8979(98)02407-4].

New color centers and photostimulated luminescence of BaFCl : Eu2+

Three new absorption bands, appearing around 670, 865 and 980 nm, are observed in BaFCl:Eu2+ phosphors. They are ascribed to F aggregates formed by association of F centers or by trapping of electrons to the primary F-n(+) (n = 2,3,4) centers. The growth curves of F and F-aggregated centers are similar and may be divided into three stages. The photostimulated luminescence (PSL) decays by stimulation into the absorption bands of F centers and of F aggregates are different; the former decay logarithmically and the latter decay hyperbolically. Some non-radiative processes related to F aggregates, such as electron migration, occur accompanying the PSL process, which may reduce the PSL efficiency and sensitivity of the phosphors. (C) 1997 Published by Elsevier Science Ltd. All rights reserved.

一类基于IPO的工作流过程建模语言规范分析

在工作流管理系统中,过程模型信息的交换是通过过程建模语言来实现的。不同的过程模型由其专有语言来定义,它们的表达方式可作为选择建模语言的基准。该文首先介绍现已存在的工作流过程建模语言的分类,然后针对其中的一类,着重对两个比较典型的过程定义语言规范进行了分析和比较。

BaLiF_3掺稀土离子的光学性质及光激励发光

本文介绍了无机光激励发光（PSL）材料的基本知识和研究进展，并在已有文献基础上对BaLiF_3：Eu~(2+)的光激励发光特性作出了进一步研究，获得了有关BaLiF_3：Eu~(2+)光激励发光特性一些新的研究进展和重新认识。运用高温固相反应法合成BaLiF_3：Ce~(3+)、BaLiF_3：Ce~(3+)，Eu~(2+)、BaLiF_3：Tb~(3+)等粉末磷光体，并对以前文献的合成方法进行改进，获得本底颜色的粉末磷光体以满足对外观的要求。通过BaLiF_3：Ce~(3+)光谱特性的研究指出，激发光谱随CeF_3掺入量增加而变化的原因是由于Ce~(3+)的两种不同电荷补偿方式所致：CeF_3 掺入量较时以Li~+离子空位为有利的补偿方式；CeF_3掺入量较高时以间隙F~-离子为主要补偿方式。首次观察到BaLiF_3中Ce~(3+)→Eu~(2+)能时传递，提出Eu~(3+)被还原为Eu~(2+)的机理。在此还原模型基础上计算出能量传递几率和临界距离。同时指出Eu~(2+)和Ce~(3+)之间存在竞争吸收，当Ce~(3+)离子浓度超过一定值时Eu~(2+)发射强度降低。对BaLiF_3的x射线辐照损伤作了进一步深入研究，表明BaLiF_3的辐照损伤在通常条件下不易恢复，适当掺杂并不能改善BaLiF_3等物质抗辐照能力。但由于BaLiF_3良好的吸收x射线能力，是很有应用前景的闪烁体。指出BaLiF_3：Eu~(2+)的光激励谱实为其倍频激发谱带，分析其无法光激励原因。研究了BaLiF_3：Tb~(3+)和KMgF_3：Tb~(3+)的光谱。

氟化物体系新型无机闪烁材料制备特性及若干基础问题研究

本文综述了无机闪烁材料研究的进展，着重了氟化物体系中几种新型无机闪烁材料的制备、性能及辐照损伤等特性。运用B－S法生长了BaF_2及BaF_2:Ce晶体，研究了其室温以上的TSL特性，发现BaF_2的TSL曲线是由381K和402K的双峰结构组成Ce的掺入使TSL强度降低，同时提高了其抗辐照性能。运用高温固相反应法合成了KMgF_3、KCaF_3、BaLiF_3微晶，用TSL和ESR研究了其辐照损伤及其恢复情况。纠正了文献中对KMgF_3热释峰归属的错误，发现在KMgF_3、KCaF_3中杂质Al~(3+)一方面引入新的缺陷而导致新的热释峰，另一方面抑制了F心的形成。在BaLiF_3中La~3、Yb~(3+)的掺入会抑制F心，同时使H心增强，观察到了大剂量（10~8Rad）辐照时BaLiF_3中FA心形成及其在加热和紫外光照射时向F心的转化。发现它们的X射线辐照损伤极易恢复，而γ射线辐照损伤则较难恢复。通过对ESR峰高与Eu掺杂浓度的研究，运用数学拟合法求得了Eu~(3+)掺入KMgF_3制备KMgF_3:Eu~(2+)的饱和掺杂浓度为0.29mol%。首次发现BaLiF_3:Eu~(2+)的PSL现象，并证明它是一种很有发展前途的新型X射线存贮材料。运用B－S法探索了KMgF_3、BaLiF_3、单晶生长工艺，用X射线四园衍射法发现La~(3+)、Tm~(3+)掺入KMgF_3时分另占据K~+、Mg~(2+)的格位，用SEM观察了浓H_2SO_4cf KMgF_3单晶的侵蚀形貌和BaLiF_3单晶生长中经常出现的包裹体。研究了LaF_3:Ce~(3+)的发光特性及其它三价稀土离子的共掺杂对Ce~(3+)发光特性的影响，发现其它三价稀土离子的共掺杂都会使Ce~(3+)的发光猝灭，并分别归结为能量传递和电荷转移。用B－S法生长了CeF_3单晶，但因原料纯度低，衰减常数和光子产额都比文献值要低，说明在闪烁晶体制备时，提高原料纯度是十分必要的。

Photoluminescence and photostimulated luminescence of BaFBr:Eu2+,Eu3+

In the photoluminescence (PL) of BaFBr:Eu2+,Eu3+, the emissions of Ea(2+), carrier electron-hole (e-h) recombination, and Eu3+ are observed, while in the photostimulated luminescence (PSL) only the emission of Eu2+ is exhibited. This disappearance of e-h recombination in PSL is considered to be caused by carrier migration during photo-stimulation. (C) 1997 American Institute of Physics.

PROCESS OF PHOTOLUMINESCENCE AND PHOTOSTIMULATED LUMINESCENCE IN BAFBR-EU PHOSPHORS

The photoluminescence (PL) and photostimulated luminescence (PSL) of BaFBr: Eu phosphors are reported. In the photoluminescence of BaFBr:Eu, the emission of Eu2+, e-h recombination and Eu3+ have been observed, while in the photostimulated luminescence only the emission of Eu2+ was observed. This phenomenon may be explained well by the suggestion of a two-hand model for the host emission in which the host emission energy may transfer to Eu2+ difference of excitation in those two processes results in different transfer rates which makes the PL and PSL emission different.

BaLiF_3：Eu~（2＋）一种新型X射线存贮材料

ＢａＬｉＦ３微晶经Ｘ射线辐照所产生的热释光，在日光下照射１５分钟或在室温条件下放置２～３天都会消失，表明Ｘ射线对ＢａＬｉＦ３微晶的辐照损伤是轻微的，易擦除的。实验还发现ＢａＬｉＦ３：Ｅｕ（２＋）具有光激励发光特性，因此可以认为ＢａＬｉＦ３：Ｅｕ（２＋）是一种具有潜在应用价值的新型Ｘ射线存贮材料。