Preparation of pH-sensitive polymer by thermal initiation polymerization and its application in fluorescence immunoassay

A fluorescence immunoassay for human IgG (Ag) was developed using a pH-sensitive polymer prepared by thermal initiation or redox initiation polymerization as a carrier. In the competitive immunoassay, appropriate quantity of Ag was immobilized on the polymer and the standard Ag (or sample) solution, and a constant amount of fluorescein isothiocyanate labeled goat anti-human IgG antibody (Ab-FITC) was added. Immobilized Ag and the standard (or sample) Ag competed for binding to the Ab-FITC in 37 C in homogeneous format. After changing the pH to separate the polymer-immune complex precipitate, it was re-dissolved and determined by fluorescence method. The results showed that the immobilization efficiency, immunological reaction activities of immobilized Au and phase transition pH range were improved as Ag was immobilized by thermal initiation instead of redox initiation polymerization. Under optimum conditions, the calibration graphs for the Ag in both methods, thermal initiation and redox initiation, were linear over the concentration range of 0.0-1000 ng mL(-1), with detection limits 8 (thermal initiation) and 12 ng mL(1) (redox initiation), respectively. Moreover, some pH-sensitive polymer prepared only in organic solvent or under high temperature could also be used as an immunoreaction carrier by thermal initiation polymerization. Thermal initiation polymerization was a better immobilization mode. (C) 2004 Elsevier B.V. All rights reserved.

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.

Tentative analysis of Swirl defects in silicon crystals

Swirl defects in dislocation-free Czochralski (CZ) silicon crystals have been investigated by preferential etching, transmission electron microscopy (TER I) and electron energy loss spectroscopy (EELS) mode of a scanning transmission electron microscope (STEM). Two kinds of Swirl defects have been found with a good correspondence between striated pattern consisting of hillocks and the buried micro-defects. The Swirl defects were identified as perfect dislocation loop cluster and tetrahedral precipitate, respectively. In addition, a kind of tiny micro-defects is found to be distributed preferentially in the vicinity of the Swirl pattern although there is no detectable correspondence between hillocks and the micro-defects. The energy-filtered images have been obtained by the plasma peaks at different parts of a coherent precipitate with the Si matrix. The experimental results show some indications of the existence of oxygen and carbon in the core of the precipitate and suggest that oxygen and carbon may play important roles in the formation of Swirl defect. (C) 2000 Elsevier Science B.V. All rights reserved.

Void-like defects in annealed Czochralski silicon

Void-like defects of octahedron structure having {111} facets were observed in annealed Czochralski silicon. The amorphous coverage of SiOx and SiCx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. It is suggested that these defects are a kind of amorphous precipitate origin. A mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. (C) 1998 American Institute of Physics. [S0003-6951(98)02842-3].

THE STUDY OF MICROSTRUCTURE IN IRON-DOPED AND SULFUR-DOPED INP CRYSTALS BY MEANS OF HREM AND COMPUTER-SIMULATION

The microstructures in iron- and sulphur-doped InP crystals were studied using both electron microscopy and electron diffraction. A modulated structure has been found in S-doped InP crystal, where the commensurate modulations corresponded to periodicities of 0.68 nm and 0.7 nm in real space and were related to the reflections of the cubic lattice in [111] and [113BAR] directions; they were indexed as q111* = 1/2(a* + b* + c*) and q113BAR* = 1/4(-a* - b* + 3c*), respectively. Single atomic layers of iron precipitate were observed, with preferred orientations along which precipitates are formed. Simulated calculations by means of the dynamical theory of electron diffraction using models for the precipitate structure were in good agreement with our experimental results. The relation between the modulated structure and the precipitates is also discussed.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abrahams-Buiocchi etching (USAB), and the etch pits are observed and measured by metalloscope and scanning electron microscope (SEM) equipped with an energy dispersive X-ray spectrometer (EDS), respectively. The size of etch pit revealed by USAB etching is about 1 order of magnitude smaller than that revealed by molten KOH. The amount of arsenic atoms in the dislocation-dense zone is about 1% larger than that in an adjacent dislocation-free zone measured by EDS attached to SEM, which indicates that the excess arsenic atoms adjacent to the dislocation-dense zone are attracted to the dislocations and precipitate there due to the deformation energy.

Influence of precipitates on GaN epilayer quality

GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.

Production cross-section of Ra-230 in the reaction of 60 MeV/u O-18 ions with U-238

A thick natural uranium target was bombarded with a 60 MeV/u O-18 beam. The neutron-rich isotope Ra-230 as the target residue was produced through the multinucleon transfer reaction (U-238-4p-4n). The barium and radium fraction as BaCl2 precipitate were radiochemically separated first from the mixture of uranium and reaction products. Then, the radium fraction was separated from BaCl2 precipitate by using cation exchange technique. The gamma-ray spectra of the Ra fraction were measured using an HPGe detector. The production cross sections of Ra-230 were obtained by a combination of the radiochemical separation technique and off-line gamma-ray spectroscopy. The cross section of Ra-230 has been determined to be 66 +/- 20 mu b.

Degradation of aquatic humic material by ultraviolet light

Natural humic water was treated with ultraviolet (UV) light and UV + hydrogen peroxide . The effects on the dissolved organic carbon content (DOC), the UV-absorbance at 254 nm (UV-abs.), the molecular size distribution, pH, and mutagenic activity were monitored, and the identity and concentrations of the most abundant gas chromatographable organic degradation products were determined. The DOC content and the UV-abs. of the water decreased substantially during treatment with. The decreases were dependent on the time of irradiation (UV dose) as well as on the H2O2 dose applied. The humus macromolecules were degraded to smaller fragments during irradiation. At higher UV doses, however, part of the dissolved organic matter (DOM) was found to precipitate, probably as a result of polymerization. Oxalic acid, acetic acid, malonic acid, and n-butanoic acid were the most abundant degradation products detected. These acids were found to account for up to 20% and 80% of the DOM in UV- and waters, respectively. No mutagenic activity was generated by the UV irradiation or the treatment. It is further concluded that the substantial mutagenic activity formed during chlorination of humic waters cannot be decreased by using UV irradiation as a pretreatment step.

Gold Nanoparticle-based Colorimetric Sensor for pH Sensing

We present a newly designed colormetric sensor sensitive to pH value based on a gold nanocomposite composed of gold nanoparticles and pH-sensitive polymer{dodecylthioether end functionalized poly[2-(diethlamino) ethyl methacrylate], poly(DEAEMA)-DDT}. We have shown that this design can produce stable GNP precipitate under weakly basic condition(pH=7.5) and this precipitate can be dispersed in acidic solution(pH=4.0), due to the 2-(diethylamino) ethyl methacrylate protonated by H+.

Effect of Y for enhanced age hardening response and mechanical properties of Mg-Ho-Y-Zr alloys

In this study, compositional dependence of age hardening characteristics and tensile properties were investigated for Mg-4Ho-xY-0.6Zr alloys (x = 0, 3 5, and 7 wt%). The result showed that with increasing Y content, the hardness of the alloys increased in the as-quenched and aged-peak conditions. Considerable age hardening response was recognized for the alloys. When the alloy containing 7% Y showed the most remarkable age hardening response at aging temperature of 250 degrees C.

Microstructures and mechanical properties of as-cast Mg-5Y-3Nd-Zr-xGd (x=0, 2 and 4 wt.%) alloys

Mg-5Y-3Nd-0.6Zr-xGd (x = 0, 2 and 4 wt.%) alloys were prepared by metal mould casting technique, the structures and mechanical properties were investigated. The alloys were mainly composed of alpha-Mg solid solution and beta-phase. With increasing Gd content, Mg5RE phase increased and the grain was refined. The Mg-5Y-3Nd-2Gd-0.6Zr alloy exhibited highest ultimate tensile strength and Mg-5Y-3Nd-0.6Zr alloy showed highest yield strength at room temperature. With increasing amount of Gd, the thermal resistance was improved. The Mg-5Y-3Nd-4Gd-0.6Zr alloy exhibited highest UTS and YS at 250 degrees C, they were about 1.27 times higher than those of Gd-free alloy, which was mainly attributed to the increase of the beta-phase and Mg5RE strengthening phase.

High activity PtRu/C catalysts synthesized by a modified impregnation method for methanol electro-oxidation

A modified impregnation method was used to prepare highly dispersive carbon-supported PtRu catalyst (PtRu/C). Two modifications to the conventional impregnation method were performed: one was to precipitate the precursors ((NH4)(2)PtCl6 and Ru(OH)(3)) on the carbon support before metal reduction: the other was to add a buffer into the synthetic solution to stabilize the pH. The prepared catalyst showed a much higher activity for methanol electro-oxidation than a catalyst prepared by the conventional impregnation method. even higher than that of current commercially available, state-of-the-art catalysts. The morphology of the prepared catalyst was characterized using TEM and XRD measurements to determine particle sizes, alloying degree, and lattice parameters. Electrochemical methods were also used to ascertain the electrochemical active surface area and the specific activity of the catalyst.

Structure stability and strengthening mechanism of die-cast Mg-Gd-Dy based alloy

Mg-8Gd-1Dy-0.3Zn (wt.%) alloy was prepared by high-pressure die-casting technique. The thermal stability, mechanical properties at temperature range from room temperature to 573 K and strengthening mechanism was investigated. The results showed that the die-cast state alloy was mainly composed of fine cellular equiaxed grain. The fine porosity-free skin region was related to the aggregation of rare earth elements. The long lamellar-shaped stacking compound containing Zn and polygon-shaped precipitate were observed along the grain boundaries. The die-cast sample exhibited high mechanical properties and good thermal stability until 523 K.