Quantum Monte Carlo study of the CO interaction with a dimer model surface for Cr(110)

The chemisorption of CO on a Cr( 110) surface is investigated using the quantum Monte Carlo method in the diffusion Monte Carlo (DMC) variant and a model Cr2CO cluster. The present results are consistent with the earlier ab initio HF study with this model that showed the tilted/ near-parallel orientation as energetically favoured over the perpendicular arrangement. The DMC energy difference between the two orientations is larger (1.9 eV) than that computed in the previous study. The distribution and reorganization of electrons during CO adsorption on the model surface are analysed using the topological electron localization function method that yields electron populations, charge transfer and clear insight on the chemical bonding that occurs with CO adsorption and dissociation on the model surface.

碱金属在[110]单轴应力下的理论强度

<正> 我们知道,晶须的强度远远大于大晶体的强度,很可能接近于理想晶体的理论强度.而晶须的轴线则通常平行于晶体的三个主要方向[100],[110]或[111]。因此当计算理想晶体在单轴应力下的理论强度时,也必须考虑不同的应力方向.七十年代,Milstein等人利用Morse势和Born稳定性判据计算了立方晶体分别在[100],[110]和[111]单轴应力下的理论强度.由于有心力近似受到Cauchy关系的限制,我们在文献

110-W fiber laser with homemade double-clad fiber

A high-power ytterbium-doped fiber laser (YDFL) with homemade double-clad fiber (DCF) is introduced in this letter. The geometric parameter and laser characteristics of the fiber have been studied. With one-end-pumping scheme, pumped by a high-power laser diode with launching power of 280 W, a maximum continuous wave (CW) output of 110 W is obtained with an optical-to-optical efficiency of 40%.

Preparation and optical properties of silicate glasses containing Pd nanoparticles

We report the space selective precipitation of Pd nanoparticles in Pd2+ -doped silicate glass by ultrashort laser pulses irradiation and further annealing. Absorption spectra, transmission electron microscopy, refractive index measurement and Z-scan technique demonstrated that metallic Pd nanoparticles were precipitated in the glass sample after irradiation by an 800-nm femtosecond laser and subsequent annealing at 600 degrees C. We discuss a refractive index change and nonlinear absorption that combines the precipitation of Pd nanoparticles. Crown Copyright (c) 2005 Published by Elsevier B.V. All rights reserved.

树鼩PD-1基因的分离、鉴定及表达分析

cDNA序列.序列分析显示树鼩PD-1 cDNA 的开放阅读框编码一个由242个氨基酸组成的跨膜蛋白,并且和人类、灵长类和啮齿类中的同源基因有高度相似性.组织分布分析表明在所检测的几种组织中PD-1基因只在脾中表达.此外,淋巴细胞刺激实验显示,利用PMA和ionomycin刺激新鲜分离的树鼩外周血单核细胞(PBMCs)能够诱导PD-1 mRNA水平上的表达.我们的结果为将来进一步探讨树鼩的免疫功能提供了良好的基础.

杂质在Pd硅化物形成时的行为

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

(110) oriented ZnO thin films were epitaxially prepared on (001) SrTiO3 single crystal substrates by a pulsed laser deposition method. The evolution of structure, surface morphology, and electrical conductivity of ZnO films was investigated on changing the growth temperature. Two domain configurations with 90 degrees rotation to each other in the film plane were found to exist to reduce the lattice mismatch between the films and substrates. In the measured temperature range between 80 K and 300 K, the electrical conductivity can be perfectly fitted by a formula of a (T) = sigma(0) + aT(b/2). implying that the electron-phonon scattering might have a significant contribution to the conductivity. (C) 2008 Elsevier Ltd. All rights reserved.

InP Based PD/EAM Integrated Photonic Switch

A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20 nm at 2.5 Gbit/s with a low input optical power of about 20 mW.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Cleaved-edge overgrowth of aligned InAs islands on GaAs(110)

A novel approach for positioning InAs islands on GaAs(110) by cleaved-edge overgrowth is reported. The first growth sample contains a strained InxGa1-xAs/GaAs superlattice of varying indium fraction and thickness, which acts as a strain nanopattern for the cleaved edge overgrowth. The formation of aligned islands is observed by means of atomic force microscopy. The ordering of the aligned islands and the structure of a single InAs island are found to depend on the properties of the underlying InxGa1-xAs/GaAs superlattice and molecular beam epitaxy growth conditions.

A novel method for positioning of InAs islands on GaAs(110)

A novel method for positioning of InAs islands on GaAs (110) by cleaved edge overgrowth is reported. The first growth sample contains strained InxGa1-xAs/GaAs superlattice (SL) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. Atoms incident on the cleaved edge will preferentially migrate to InGaAs regions where favorable bonding sites are available. By this method InAs island chains with lateral periodicity defined by the thickness of InGaAs and GaAs of SL have been realized by molecular beam epitaxy (MBE). They are observed by means of atomic force microscopy (AFM). The strain nanopattern's effect is studied by the different indium fraction of SL and MBE growth conditions. (c) 2005 Elsevier B.V. All rights reserved.