Optimized phase pupil masks for extended depths of field

By properly designing a phase pupil mask to modulate or encode the optical images and then digitally restoring them, one can greatly extend the depth of field and improve image quality. The original works done by Dowski and Cathey introduce the use of a cubic phase pupil mask to extend the depth of field. The theoretical and experimental researches all verified its effectiveness. In this paper, we suggest the use of an exponential phase pupil mask to extend the depth of field. This phase mask has two variable parameters for designing to control the shape of the mask so as to modulate the wave-front more flexible. We employ an optimization procedure based on the Fisher information metric to obtain the optimum values of the parameters for the exponential and the cubic masks, respectively. A series of performance comparisons between these two optimized phase masks in extending the depth of field are then done. The results show that the exponential phase mask provide slight advantage to the cubic one in several aspects. (c) 2006 Elsevier B.V. All rights reserved.

Reliable Validation Based on Optical Flow Visualization for CFD Simulations

A reliable validation based on the optical flow visualization for numerical simulations of complex flowfields is addressed in this paper. Several test cases, including two-dimensional, axisymmetric and three-dimensional flowfields, were presented to demonstrate the effectiveness of the validation and gain credibility of numerical solutions of complex flowfields. In the validation, images of these flowfields were constructed from numerical results based on the principle of the optical flow visualization, and compared directly with experimental interferograms. Because both experimental and numerical results are of identical physical representation, the agreement between them can be evaluated effectively by examining flow structures as well as checking discrepancies in density. The study shows that the reliable validation can be achieved by using the direct comparison between numerical and experiment results without any loss of accuracy in either of them.

Compression of Chinese document images based on morphologic analysis and pattern matching

We propose a highly efficient content-lossless compression scheme for Chinese document images. The scheme combines morphologic analysis with pattern matching to cluster patterns. In order to achieve the error maps with minimal error numbers, the morphologic analysis is applied to decomposing and recomposing the Chinese character patterns. In the pattern matching, the criteria are adapted to the characteristics of Chinese characters. Since small-size components sometimes can be inserted into the blank spaces of large-size components, we can achieve small-size pattern library images. Arithmetic coding is applied to the final compression. Our method achieves much better compression performance than most alternative methods, and assures content-lossless reconstruction. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Compression of Chinese document images based on morphologic analysis and pattern matching

We propose a highly efficient content-lossless compression scheme for Chinese document images. The scheme combines morphologic analysis with pattern matching to cluster patterns. In order to achieve the error maps with minimal error numbers, the morphologic analysis is applied to decomposing and recomposing the Chinese character patterns. In the pattern matching, the criteria are adapted to the characteristics of Chinese characters. Since small-size components sometimes can be inserted into the blank spaces of large-size components, we can achieve small-size pattern library images. Arithmetic coding is applied to the final compression. Our method achieves much better compression performance than most alternative methods, and assures content-lossless reconstruction. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Morphological ordered gray-scale erosion for optical image processing

An ordered gray-scale erosion is suggested according to the definition of hit-miss transform. Instead of using three operations, two images, and two structuring elements, the developed operation requires only one operation and one structuring element, but with three gray-scale levels. Therefore, a union of the ordered gray-scale erosions with different structuring elements can constitute a simple image algebra to program any combined image processing function. An optical parallel ordered gray-scale erosion processor is developed based on the incoherent correlation in a single channel. Experimental results are also given for an edge detection and a pattern recognition. (C) 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)00306-7].

Grating-encoded multichannel photorefractive incoherent-to-coherent optical conversion

A dynamic multichannel incoherent-to-coherent optical converter based on the photorefractive effect of SBN:Ce is described. A number of grating-encoded input images, illuminated by incoherent light, are projected onto the crystal to yield photoinduced phase gratings. Coherent positive replicas of these images are simultaneously reconstructed by a coherent read beam. A simple theoretical description of this converter and corresponding experimental results are presented.

Full-range parallel Fourier-domain optical coherence tomography using sinusoidal phase-modulating interferometry

We demonstrate a full-range parallel Fourier-domain optical coherence tomography (FD-OCT) in which a tomogram free of mirror images as well as DC and autocorrelation terms is obtained in parallel. The phase and amplitude of two-dimensional spectral interferograms are accurately detected by using sinusoidal phase-modulating interferometry and a two-dimensional CCD camera, which allows for the reconstruction of two-dimensional complex spectral interferograms. By line-by-line inverse Fourier transformation of the two-dimensional complex spectral interferogram, a full-range parallel FD-OCT is realized. Tomographic images of two separated glass coverslips obtained with our method are presented as a proof-of-principle experiment.

Phase interpretation for polarization-dependent near-field images of high-density gratings

It has been described that the near-field images of a high-density grating at the half self-imaging distance could be different for TE and TM polarization states. We propose that the phases of the diffraction orders play an important role in such polarization dependence. The view is verified through the coincidence of the numerical result of finite-difference time-domain method and the reconstructed results from the rigorous coupled-wave analysis. Field distributions of TE and TM polarizations are given numerically for a grating with period d = 2.3 lambda, which are verified through experiments with the scanning near-field optical microscopy technique. The concept of phase interpretation not only explains the polarization dependence at the half self-imaging distance of gratings with a physical view, but also, it could be widely used to describe the near-field diffraction of a variety of periodic diffractive optical elements whose feature size comparable to the wavelength. (C) 2008 Elsevier B.V. All rights reserved.

Optical recording properties of metal-azo dye as recording medium with super-resolution near-field structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure (Super-RENS) of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270 degrees C and the mass loss is about 48% in a narrow temperature region (15 degrees C). The complex refractive index N (N = n + ik) is measured. High refractive index (n = 2.45) and low extinction coefficient (k = 0.2) at the recording wavelength 650nm are attained. Static optical recording tests with and without Super-RENS are carried out using a 650nm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.

Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

Nonpolar a-plane (1120) ZnO thin films have been fabricated on gamma-LiAlO2 (302) substrates via the low-pressure metal-organic chemical vapor deposition. An obvious intensity variation of the E-2 mode in the Raman spectra indicates that there exhibits in-plane optical anisotropy in the a-plane ZnO thin films. Highly-oriented uniform grains of rectangular shape can be seen from the atomic force microscopy images, which mean that the lateral growth rate of the thin films is also anisotropic. It is demonstrated experimentally that a buffer layer deposited at a low temperature (200 degrees C) can improve the structural and optical properties of the epilayer to a large extent. (c) 2007 Elsevier B.V. All rights reserved.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

A simple route of morphology control and structural and optical properties of ZnO grown by metal-organic chemical vapour deposition

Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2 theta. locations of ZnO (002) face in the XRD patterns and the E-2(high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

Influence of fused interface on the optical and thermal characteristics of vertical cavity lasers

From the effective absorption coefficient of bonded interface and the relationship of interface to reflectivity at cavity mode for double bonded vertical cavity laser, it can be seen that bonded interfaces should be positioned at the null of standing wave distribution, and the thickness of interface should be less than 20 nm. Using the finite elements method, the temperature contour map of laser can be calculated. Results showed that the influence of thin interface to thermal characteristics of VCSELS is slight, while thick interface will lead to temperature increase of active region. SEM images demonstrate that hydrophobic bonding is suitable for the fabrication of the device, while hydrophilic bonding interface is unfavorable to optical and thermal properties of devices with interface thickness larger than 40 nm.

Optical properties of highly strained GaInAs/GaAs quantum wells grown by Sb assistance

Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.

Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots

Optical and structural properties of self-organized InAs/GaAs quantum dots (QDs) with InxGa1-xAs or GaAs cover layers grown by molecular beam epitaxy (MBE) have been characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The TEM and AFM images show that the surface stress of the InAs QDs was suppressed by overgrowth of a InxGa1-xAs covering layer on the top of the QDs and the uniformity of the QDs preserved. PL measurements reveal that red shifts of the PL emission due to the reduction of the surface strain of the InAs islands was observed and the temperature sensitivity of the PL emission energy was suppressed by overgrowth of InxGa1-xAs layers compared to that by overgrowth of GaAs layers.